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    1N23 JAN Search Results

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    Catalog Datasheet MFG & Type Document Tags PDF

    D65019

    Abstract: 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR ASME-14 1N23WG
    Text: REVISIONS LTR A DESCRIPTION DATE APPROVED Add new source, correct figure 1 notes. Editorial changes throughout. 2 June 2006 Thomas M. Hess MIL-S-19500/322 has been inactivated. This drawing may be used as a substitute. Prepared in accordance with ASME-14.100


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    MIL-S-19500/322 ASME-14 037Z3 D65019 1N23 diode JAN1N23WE 1N23WGMR 1N23 Diode Holder 037Z3 01037 JAN1N23WG JAN1N23WGMR 1N23WG PDF

    MIL-STD-750E

    Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


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    MIL-STD-750E MIL-STD-750D MIL-STD-750E 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder PDF

    systron Donner 410

    Abstract: MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


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    MIL-STD-750E MIL-STD-750D systron Donner 410 MIL-STD-750E Ultrasonic Atomizing Transducer systron donner accelerometer substitute diode PH 33D fastest finger first indicator synopsis emerson three phase dc motor driver service note tektronix 576 curve tracer MIL-STD-750E 1071 proximity detector sensor PDF

    1N23 diode

    Abstract: 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode
    Text: MICROWAVE MIXER DIODE I48CAY/B Dev. No. DEVELOPMENT SAMPLE DATA Schottky b a rrie r low noise m ixer diode for use at X band. The 148CAY/B is interchangeable with the 1N23 s e r ie s . QUICK REFERENCE DATA Typical noise figure at X band 6.5 Frequency range


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    I48CAY/B 148CAY/B 375GHz, 45MHz K1007, 45MHz. JAN-106holder, 1N23 diode 1N23 K1007 1N23 Diode Holder 1n23 jan noise diode PDF

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


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    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


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    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


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    1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR PDF

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


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    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


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    3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r PDF