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    1N393 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N393 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N393 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N393 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N393 Unknown Silicon Diode Scan PDF
    1N393 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N393 Semitronics Silicon Diodes Scan PDF
    1N3930 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3930 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3931 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3931 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3931 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3932 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3932 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3933 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3933 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3934 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N3934 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N3934 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N3934 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N3934 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N393 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m


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    PDF 1N3936 Current11m StyleDO-204AA NumberTY00200003

    Untitled

    Abstract: No abstract text available
    Text: 1N3938 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage200 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)25’


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    PDF 1N3938 Voltage200 StyleDO-13

    Untitled

    Abstract: No abstract text available
    Text: 1N3939 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.0 @Temp (øC) (Test Condition)25’ V(RRM)(V) Rep.Pk.Rev. Voltage400 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.60 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)6.0 @Temp. (øC) (Test Condition)25’


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    PDF 1N3939 Voltage400 StyleDO-13

    Untitled

    Abstract: No abstract text available
    Text: 1N3932 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage2.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage2.0 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


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    PDF 1N3932 Current10u

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    TNY255

    Abstract: 1N4004 smd equivalent EE16 transformer tny255 TNY253G TNY254G equivalent equivalent components of zener diode 1n5229b optocoupler SFH615 transformer for TNY253 1N5239B SMD EE16 core transformer
    Text: TNY253/254/255 TinySwitch Family Energy Efficient, Low Power Off-line Switchers Product Highlights Lowest Cost, Low Power Switcher Solution • Lower cost than RCC, discrete PWM and other integrated/hybrid solutions • Cost effective replacement for bulky linear adapters


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    PDF TNY253/254/255 12/kWHr) TNY255 1N4004 smd equivalent EE16 transformer tny255 TNY253G TNY254G equivalent equivalent components of zener diode 1n5229b optocoupler SFH615 transformer for TNY253 1N5239B SMD EE16 core transformer

    Untitled

    Abstract: No abstract text available
    Text: TNY253/254/255 ® TinySwitch Family Energy Efficient, Low Power Off-line Switchers Product Highlights Lowest Cost, Low Power Switcher Solution • Lower cost than RCC, discrete PWM and other integrated/hybrid solutions • Cost effective replacement for bulky linear adapters


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    PDF TNY253/254/255

    1N3940

    Abstract: IN3939 1N3938 1N3939 1N3941 1N3942
    Text: EDAL INDUSTRIES INC 45E » H BDTS?lb OÜ003D7 BÜ7 • E DL 7~cf -/5 Bv - PIV See B p low @ 2.0 Amps 25 AMPS M. V 1.1 @ 5 xia max STYLE 6.0 amp @ 25 PIV @ 25 DO-13 sum p EQUIY. TO0 - EXCEPT Part # PIV 1N3938 1N3939 1N3940 1N3941 1N3942 200 400 600 800


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    PDF DGD03D7 po-13_ 1N3938 1N3939 1N3940 1N3941 1N3942 N3938 1N3942 IN3939

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    4E20-8

    Abstract: 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25°C Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


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    PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E20-8 1N3299 1N3300 1N3300A 1N3303 1N3303A 1N3304 1N3489 1N3489A 1N3490

    fri07

    Abstract: 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes 25°C @ Switching current Is 125|aA Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


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    PDF UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 fri07 1n3842 1N3299 1N3836 4e20-3 1N3844 4E20-8 4E50-M-28 1N3300 1N3300A

    1N3842

    Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
    Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current


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    PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 1N3842 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303

    1N2222A

    Abstract: 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053 1N3549
    Text: xcmicron - _ SB._ 27E » • MäbTEMb 00005=17 MäbTEMb O OOOST? s em ic o n d u c to r s S e m itr o n ic s C o r p . IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T»» 1N3241 1N3242 1N3243 1N3244


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    PDF oQoos11! DO-41case 1N3549 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N2222A 1n2222 IN2071A 1N3934 1N3578 IN222 IN1342 IN5054 IN5053

    A1W TRANSISTOR

    Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
    Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201


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    PDF 403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822

    4E50M-28

    Abstract: FR103 1N3772
    Text: FOUR LAYER DIODES Parameters for All 4-Layer Diodes @ 25 C 125pA Is Switching current Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @ 70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 |iA @ 0.6 Vs Reverse leakage current


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    PDF 125pA UF4001 UF4002 UF4003 UF4004 UF4005 UF4006 UF4007 4E50M-28 FR103 1N3772

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    3S41SL

    Abstract: shockley 4E20-28 4E20-3 4E20-8 4E20-M-28 4E20-M-3 4E20-M-8 4E30-3 4E30-8
    Text: -FENldAL ELECTRONICS/APD * S3 DE | 3541SL.3 OODDTEE 3 | T r i FOUR-LAYER DIODES DO-7/DO-35 Case Typo Switching Voltage Vs ± V @ 25*C ' V ' ’ ' . . 4E20-3 4E20-M-3 4E20-8 - 4 E 2 0 -M -8 4 E 2 0 -2 8 20±4 20±4 20±4 20±4 20 ± 4 4E20-M-28


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    PDF 3S41SL DO-7/DO-35 4E20-3 4E20-M-3 4E20-8 4E20-M-8 4E20-28 4E20-M-28 4E30-3 4E30-M-3 shockley 4E30-8

    1N1120

    Abstract: 1N2484 1N342 1N2226
    Text: - x _ S B . _ _ _ c m i c r o 2 7 E » MäbTEMb • M äb T EM b IN T E X / S E M IT R O N IC S silicon rectifiers cont’d miniature axial lead silicon rectifiers T »» 1N3241 1N3242 1N3243 1N3244 1N3245 600 800 ■ 1000 1200 1500


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    PDF 1N3241 1N3242 1N3243 1N3244 1N3245 1H253 1N254 1N255 150J7 1N1120 1N2484 1N342 1N2226