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    1N4452 Search Results

    1N4452 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N4452 Advanced Power Devices 400mA Iout, 30V Vrrm Fast Recovery Rectifier Scan PDF
    1N4452 APD Semiconductor Planar Diodes Scan PDF
    1N4452 General Diode 400mA Iout, 30V Vrrm Fast Recovery Rectifier Scan PDF
    1N4452 Microsemi 400mA Iout, 30V Vrrm Fast Recovery Rectifier Scan PDF
    1N4452 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4452 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4452 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4452 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4452 Semico 400mA Iout, 30V Vrrm Fast Recovery Rectifier Scan PDF
    1N4452 Unitrode International Semiconductor Data Book 1981 Scan PDF

    1N4452 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


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    00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606 PDF

    1N5426

    Abstract: 1n5208 1N458B 1N5209 1n890 1N456A
    Text: SWITCHING DIODES 200mW Part* Peak Voltage Continous Reverse Current L NA V <V> R W 1N914 1N914A 1N914B 100 100 100 @ Forward Voltage V„(V) V (V) F 5000 @ 75 5000 @ 75 5000 @ 75 1.0 1.0 1.0 @ Capacitance C Maximum L (MA) Reverse Recovery Time (PF) F @ 10


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    200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454 1N5426 1n5208 1N458B 1N5209 1n890 1N456A PDF

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


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    00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914 PDF

    1N4607

    Abstract: 1N4452 1N4608
    Text: niCROSEMI CORP/ Ü1ATERTOÜIN SDE D • ^ 3 4 7 ^ 3 GGlHBbT 4SÛ ■ U N I T 1N4452-1N4607&#39; 1N4608 COMPUTER DIODE Higlr Conductance T -^ 3 -o ^ FEATU RES • M etallu rgical Bond • Planar Passivated • High C o n ductance • DO-35 Package DESCRIPTION T h is series offers M etallurgical Bonding


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    DO-35 1N4452, 1N4607 1N4608 1N4452 1N4608 600mA 1000mA 1N4452 PDF

    1N4607

    Abstract: 100-C 1N4452
    Text: COMPUTER DIODE 1N4452, 1N4607 High Conductance FEATU RES D E S C R IP T IO N • • • • This series offers Metallurgical Bonding and is specifically designed for high conductance sw itching applications such as core memories. Metallurgical Bond Planar Passivated


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    1N4452, 1N4607 DO-35 1N4452 400mAdc. DO-35 1N4607 100-C PDF

    Untitled

    Abstract: No abstract text available
    Text: COMPUTER DIODE 1N4452, 1N4607, 1N4608 High Conductance FEATURES DESCRIPTION • • • • This series offers Metallurgical Bonding and Is specifically designed for high conductance switching applications such as core memories. Metallurgical Bond Planar Passivated


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    DO-35 1N4452, 1N4607, 1N4608 1N4452 1N4608 400mAdc. 500mAdc 1N4607 250mA PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @


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    200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454 PDF

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


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    DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064 PDF

    LN4149

    Abstract: 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914
    Text: a SEMICON DUC TORS INC CHE » | 613bb5D □□DDSS7 S | Silicon Switching Diodes DO-35 Package ABSOLUTE M A X IM U M R ATING S @25<>C Storage Temperature .,. Operating Temperature.


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    013bbSD 00DDSS7 DO-35 1N4148 1NS53 LN4149 1N4009 equivalent 1N3604 cu308 1N4009 1N3600 x5200 1N4149 1N4150 1N914 PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF

    1N458B

    Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
    Text: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum


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    00000H3 DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 PDF

    IN5551

    Abstract: 1N4148 75v 150mA diode in483a zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148
    Text: PART NUMBER INDEX MICROSEMI CORP/ WATERTOWN SDE T> WM 13M7^b3 DESCRIPTION PART NUMBER 1N645J, JTX 1N645-1J, JTX, JTXV 1N647, J, JTX 1N647-1, J, JTX, JTXV 400mA; 400mA; 400mA; 400mA; 270V 270V 480V 480V J, J, J, J, JTX JTX, JTXV JTX, JTXV JTX, JTXV 1N4883-1N4884


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    1N251, 1N456 1N456A 1N457, 1N457A 1N458, 1N458A 1N459, 1N459A IN483A IN5551 1N4148 75v 150mA diode zener 400v in4148 zener diode Zener Diode 1.5W DO35 100v 500ma diode Switching diode 80V 200mA zener diode 50w zener in4148 PDF

    IN3492

    Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
    Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90


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    3E120 450E120R 450F05 450F05R 450F10 450F10R 450F20 450F20R 450F30 450F30R IN3492 sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r PDF

    1N4140

    Abstract: 1N4305 diode in 4148 diode 1N4151
    Text: I n t e r n a t io n a l S e m ic o n d u c to r , I n c . 1N 4148 1N 4446 thru thru 1N 4154 1N 4454 1N 4305 GENERAL PURPOSE PLANAR DIODES DIFFUSED SILICON PLANAR ELECTRICAL CHARACTERISTICS À at 25°C unless otherwise specified Maximum Maximum »laximum IS I


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    1N4148 1N4140 1N4150 1N4151 1N4152 1N4153 1N4154 1N4305 1N4446 1N4447 diode in 4148 diode 1N4151 PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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