Untitled
Abstract: No abstract text available
Text: 'Isiieu ^smi-donductoi ^Pioaaati, One. C^ c/ 20 STERN AVE SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 1N48 GOLD BONDED GERMANIUM DIODE FEATURES Low forward voltage drop—low power consumption Thirty years of proven reliability—one million hours mean time between failures (MTBF)
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1n48 H
Abstract: No abstract text available
Text: CRIMSON DeT| S S l M C H b □ □ □ 0 3 LH S E M I C O N D U C T O R INC 2514096 CRIMSON SEMICONDUCTOR INC 99D 00349 D T-ot^o'l GERMANIUM DIODE TYPE PEAK REVERSE VO LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FORW ARD CURRENT A T 1 V O LT M A X IM U M
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1N34A
at-25
1N38A
at-100
1N38B
1N52A
1N54A
1N57A
1N58A
1n48 H
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1N48
Abstract: No abstract text available
Text: 3 Channel-DC-Bias IC for CRT Displays CORPORATION Preliminary Data Sheet CVA4501 FEATURES • • • • • GENERAL DESCRIPTION R, G, B Cut-Off and Brightness . . . . . . . . . . . DC Control Cut-Off Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
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CVA4501
CVA4501
CVA4501T
-20oC
CVA4501N
1N-49
1N48
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1N48 diode
Abstract: diode in34a IN34A DIODE 1N54 1N34 DIODE diode 1n34 1N34 1N48 1N38A 1Ns4
Text: CRIMSON S EMICONDUCTOR INC ' TT 2514096 CRIMSON SEMICONDUCTOR 99 D 0 0 3 4 9 D » e | 2514EHL. □ 0 0 0 34 e] □ INC 7"' O / - o 7 t GERMANIUM DIODE TYPE PEAK REVERSE V O LTAG E AVERAGE F.ORW ARD CURRENT M IN IM U M FO R W A R D CURRENT A T 1 VO LT M A X IM U M
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00034e]
1N34A
at-10V
at-25
1N38A
1N38B
-100V
at-50V
at-50
1N52A
1N48 diode
diode in34a
IN34A
DIODE 1N54
1N34 DIODE
diode 1n34
1N34
1N48
1Ns4
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1N48 zener
Abstract: 1N770 1N418 1N448 1N34 IN452 1N104 1N126 1N38A 1N46
Text: AM ER I C A N M I C R O S E M I C O N D U C T BSE D • G 7 1 c1775 O O O O O C H b « A M R T - d - C H ZENER DIODES CAN YOU GET AN YO NES ATTENTION CUSTOM TOLERANCE Z ENE R * * TOLERANCES * Z E N ER * 1/2. * LARGE * EAST TO OR AND * 1 SMALL PROMPT, BETWEEN
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000000e)
IN108
1N450
1N995
1N97A
1N355
1N996
1N98A
1N417
1N3110
1N48 zener
1N770
1N418
1N448
1N34
IN452
1N104
1N126
1N38A
1N46
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1Nu5
Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Text: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p
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1N34A
1n38a
1n38b
1n52a
1N55B
1n56a
1n57a
1n58a
1n60a
1n63a
1Nu5
IN418
1Ns4
IN270
1N42
UN309
IN73
1N34A
1N46
1N128
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philco transistors
Abstract: DS503 2N408 DELCO Radio transistor philco westinghouse transistors 163-H72 westinghouse transistors D3052 2T862 westinghouse DIODES
Text: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors — Home Equipment Page S Transistors — Auto Radios Page 28 Semiconductor Diodes — Home Equipment Page 25 Silicon Rectifiers Page 60 Mechanical Specifications and Connections Page 62 S Y L V A N IA ELEC TR IC P R O D U C T S INC.
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2N252
2N309
2N140
521-6T2
528-6T2
002DIA
SR200
SR500
philco transistors
DS503
2N408
DELCO Radio transistor
philco
westinghouse transistors 163-H72
westinghouse transistors
D3052
2T862
westinghouse DIODES
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1n45b
Abstract: 1N48 diode T11G T26G IN283 T13G 1N849 DIODE 1N418 IN457A t20g
Text: 86D 0 0 3 3 5 _ 3 8 6 9 7 2 0 GENERAL DIO D E CORP GENERAL DIODE CORP fit ù 7 D DÎT| 3flfa17BG 0000335 fl J “ GERMANIUM DIODES Case Style — D0-7 TYPE \ \•% % 1N34 1N34A 1N38 1N38 1N3BA 75 75 36 125 125 1.0 1.0 1.0 1.0 1.0 1N38B 1N44 1N45
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3flL1750
1N34A
1N38B
1N52A
1N54A
1N251*
1N252.
1N434
1N458
1N456A
1n45b
1N48 diode
T11G
T26G
IN283
T13G
1N849
DIODE 1N418
IN457A
t20g
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H 48 zener diode
Abstract: 1n48 zener diode 1N48 zener 1N48 diode 1N48
Text: Microsemi Corp. f The âioôe experts SANTA ANA, CA SCOTTSDALE, AZ For m ore inform ation call: 602 941-6300 DESCRIPTION This series of Microsemi 400mW U ltra-Stable Reference Diodes offers a CE R T IFIE D R E FE R E N C E VOLTAGE STABILITY as m easured over
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400mW
H 48 zener diode
1n48 zener diode
1N48 zener
1N48 diode
1N48
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lN34A
Abstract: Germanium itt
Text: SEMICONDUCTORS7 " le m lt r o n SemitronicsCorp. 'Tz'O I-*0 7 INTEX/ SEMITRONICS CORP germanium diodes Max. P tik iH lf ll MM. Farward V o lt«« vo lti Farward Currant <mA) Ravarsa Currant (MÂ) Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m Vottap
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1N34A
1N38A
1N388
lN34A
Germanium itt
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beam Tube 6L50
Abstract: EF860 em80 tube EF80 pentode tube em84 6dj8 tube el500 ECL86 1T4T ecc189
Text: OW'C e \e c v \w\»e S R E C E I V IN G P IC T U R E T U B ES T U B ES C A T H O D E - R A Y R E C T IF IE R T U B E S T U B E S T R A N S M IT T IN G M O D U L A T I N G IM P U L S E T U B E S T U B ES TU B ES K L Y S T R O N S M A G N E T R O N S T R A V E L L I N G
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R02N0V,
developme82
6U10n
PABC80
PCC84
PCC85
PCC88
PCC189
PCF82
PCF200
beam Tube 6L50
EF860
em80 tube
EF80 pentode
tube em84
6dj8
tube el500
ECL86
1T4T
ecc189
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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1n53838
Abstract: BZV48C ZENER 1N4 BZY97-C2V7 ZENER 1N5 BZX61 Z500-1 BZV40C ZX85C Z500-21
Text: ZENER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1/4 M 2 .4 A Z 10 1/4 M 2 .7 A Z 10 1/4 M 3 .0 A Z 10 1/4 M 3 .3 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .9 A Z 10 1/4 M4 .3 A Z 10 1/4 M4 .7 A Z 10 1/4 M 5.1 A Z 10 1/4 M5 .6 A Z 10 1/4 M6 .2 A Z 10
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5270B
4187B
4193B
5226B
BZV55C
5257B
ZX85C
ZP4100
ZP4120
1n53838
BZV48C
ZENER 1N4
BZY97-C2V7
ZENER 1N5
BZX61
Z500-1
BZV40C
Z500-21
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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1N48 ph
Abstract: mc6809 trc 9500
Text: M ICROPROCESSOR DIVISION JAN UA RY 1983 INTELLIGENT PERIPHERAL CONTROLLER SCN68120/SCN68121 Prelim inary DESCRIPTION FUNCTIONAL DESCRIPTION T h e S C N 68 120/S C N 6812 1 In te llig e n t P e ri p h e ra l C o n tr o lle r s IP C s are g e n e ra l p u r
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120/S
SCN68120/SCN68121
1N48 ph
mc6809
trc 9500
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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triac zd 607
Abstract: hep c6004 2sb504 2SC 968 NPN Transistor sje 607 motorola c6004 diode BY127 specifications K872 af118 Motorola Semiconductor hep c3806p
Text: & SEM ICO N DU CTO R This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Professional service techni cian. The information contained herein is based on an analysis of the published
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thT404
ZV15A
ZY33A
ZT696
ZV15B
ZY33B
ZT697
ZT706
ZV27A
ZY62A
triac zd 607
hep c6004
2sb504
2SC 968 NPN Transistor
sje 607
motorola c6004
diode BY127 specifications
K872
af118
Motorola Semiconductor hep c3806p
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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FD6666 diode
Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5
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A4/10
A5/62
A5/105
A1000
AA100
AA110
AA111
AA112
AA113
AA114
FD6666 diode
diode BY100
1N4Q07
BA100 diode
BY164
BB139
BAY38
diode aa119
1S184 diode
1N82
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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IN3492
Abstract: sg 4001 diode 1NA4 md914 35C10 1N20b 1n67a 0a202 diode iN3495 1469r
Text: NIAX VAX U E S 0 2 5 ° D IO D E Vw PRV If Vf IR T Y P E u S E 0A5 100 .3 5 1 .3 30 G GP 0 A6 60 .3 5 1 .3 9 .0 G GP 0A7 30 .2 5 1 .7 6 .0 G SW O A IO 30 1 .0 .9 5 600 G SW OA3I 85 12 0 .7 40 G GP 0A47 30 .1 5 .6 5 10 G 0A70 2 2 .5 . 15 .2 5 30 G RF OA71 90
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3E120
450E120R
450F05
450F05R
450F10
450F10R
450F20
450F20R
450F30
450F30R
IN3492
sg 4001 diode
1NA4
md914
35C10
1N20b
1n67a
0a202 diode
iN3495
1469r
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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