Untitled
Abstract: No abstract text available
Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*
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1N5819-1
1N5819UR-1
1N5819-1,
SJ5819-1/SJ5819UR-1*
SV5819-1/SV5819UR-1*
SX5819-1/SX5819UR-1*
SS5819-1/SS5819UR-1*
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1n5819 equivalent
Abstract: 1n5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1n5819 equivalent
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
BRD8011/D.
DO-41
1n5819 equivalent
1N5817-19
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
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datasheets diode 1n5818
Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
datasheets diode 1n5818
1N5817RL
1N5818
1N5818RL
1N5819RL
1N5817-19
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1N5817
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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"Power Diode"
Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
"Power Diode"
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
10 Ampere Schottky bridge
1N5817 diode
FULL WAVE RECTIFIER CIRCUITS
Full wave rectifier datasheet
1N5818RLG
1N5817G
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
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1N5817
Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
Equivalent for 1N5819
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FULL WAVE RECTIFIER CIRCUITS
Abstract: 1N5818 1N5817 1N5819
Text: MOTOROLA Order this document by 1N5817/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers 1N5817 1N5818 1N5819 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5817/D
1N5817
1N5818
1N5819
1N5817
1N5819
FULL WAVE RECTIFIER CIRCUITS
1N5818
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Untitled
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 Low drop power Schottky rectifier Features • Very small conduction losses ■ Negligible switching losses ■ Extremely fast switching ■ Low forward voltage drop ■ Avalanche capability specified A K DO-41 Description Axial Power Schottky rectifier suited for Switch
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1N5817,
1N5818,
1N5819
DO-41
DO-41
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MBR130P
Abstract: MBR120P
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 USA 1N5817 MBR115P 1N5818 MBR120P 1N5819 MBR130P MBR140P AXIAL LEAD RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-toconsr"jction with oxide passivation and metal overlap contact.
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1N5817
MBR115P
1N5818
MBR120P
1N5819
MBR130P
MBR140P
1N5817/MBR11EP/MBR120P
1N5818/MBR130P
1N5819/MBR140F
MBR130P
MBR120P
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1N6761-1
Abstract: MICROSEMI 1N6761-1 1N5818-1
Text: 1N5818-1, 1N5819-1, 1N6759-1 – 1N6761-1 and DSB1A20 – DSB1A100 Available on commercial versions 1 Amp Schottky Barrier Rectifiers Qualified per MIL-PRF-19500/586 Qualified Levels*: JAN, JANTX, JANTXV and JANS DESCRIPTION This 1 Amp Schottky barrier rectifier is metallurgically bonded and offers military grade
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1N5818-1,
1N5819-1,
1N6759-1
1N6761-1
DSB1A20
DSB1A100
MIL-PRF-19500/586
1N5819-1
1N6761-1
DO-41
MICROSEMI 1N6761-1
1N5818-1
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EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
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PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
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BT136-600E equivalent
Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent
Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.
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10TQ045S
11DQ03
11DQ04
11EQ03
11EQ04
11EQS
15DF4
1N3645
BT136-600E equivalent
D2499 equivalent
D1878 equivalent
BT139-600 equivalent
C4927
d1577
d1554
C5386
c5129
e13005 equivalent
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lm358 li ion charger circuit
Abstract: RMS TO DC converter using LM358 lm358 sum Lithium Ion Cells 12V DC DC 3A charger 1N5819 MIC4574 MIC4575 MIC4576 UPL1V470MEH ME 9435 motorola
Text: Application Note 15 Micrel Application Note 15 Practical Switching Regulator Circuits by Brian Huffman Overview A golden power supply that will satisfy every design requirement does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be
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Untitled
Abstract: No abstract text available
Text: DO-41 Glass 1 Amp I • ' ~ Use Advantages 1N5819 HR Schottky Rectifier I HR j Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss.
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OCR Scan
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DO-41
1N5819
-1950Q
01g41
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smd package 1N5819
Abstract: 1N5819 smd diode 1N5817 smd 1n5819 smd 1N5817 smd diode 1n5819 equivalent 1N5818 smd BKC Semiconductors DO-213AB GLASS Schottky
Text: 1N5817 thru 1N5819 DO-41 Glass 1 Amp Use Advantages Schottky Rectifier Low forward voltage drop. Fast switching due to majority carrier conduction which results in high operating efficiencies because of Ipw power loss. Used in low voltage power supplies, high frequency inverters and converters,
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OCR Scan
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DO-41
1N5817
1N5819
1N5819
MIL-S-19500/586
100mA
1N5818
smd package 1N5819
1N5819 smd diode
1N5817 smd
1n5819 smd
1N5817 smd diode
1n5819 equivalent
1N5818 smd
BKC Semiconductors
DO-213AB GLASS Schottky
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1N5819 smd diode
Abstract: BKC Semiconductors DO-213AB GLASS Schottky
Text: DO-41 Glass 1 Amp Use Advantages 1N5819 HR Schottky Rectifier HR Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Used in low voltage power supplies, high frequency inverters and converters,
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OCR Scan
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DO-41
1N5819
MIL-S-19500/586
LL-41
DO-213AB)
1N5819 smd diode
BKC Semiconductors
DO-213AB GLASS Schottky
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1N5819 smd diode
Abstract: BKC Semiconductors 1N5819 smd
Text: LL-41 MELF SMD 1Amp Use Advantages HR Schottky Rectifier 1N5819 URHR Low forward voltage drop. Consult factory for commercial part. Fast switching due to majority carrier conduction which results in high operating efficiencies because of low power loss. Used in low voltage power supplies, high frequency inverters and converters,
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OCR Scan
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LL-41
1N5819
MIL-S-19500
DO-213AB)
DO-41
01g41
1N5819 smd diode
BKC Semiconductors
1N5819 smd
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MBR140P
Abstract: BR115P MBR130P MBR120P mbr115
Text: MOTOROLA SC -CDIODES/OPTO> 15E D 1 b3b75SS D07T573 1 T -0 3 MBR115P 1N5817 1N5818 MBR120P 1N5819 MBR130P MBR140P MOTOROLA SEM ICONDUCTOR TECHNICAL DATA A X I A L L E A D R E C T IF IE R S . . . employing the S ch o ttky Barrier principle in a large area metal-tosilicon power diode. State-of-the-art geometry features epitaxial
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OCR Scan
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b3b75SS
D07T573
MBR115P
1N5817
1N5818
MBR120P
1N5819
MBR130P
MBR140P
MBR150,
MBR140P
BR115P
mbr115
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