1N5819 GENERAL SEMICONDUCTOR Search Results

1N5819 GENERAL SEMICONDUCTOR Result Highlights (5)

Part	Manufacturer	Description
TPHR7404PU	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1N5819 GENERAL SEMICONDUCTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
UF4007 SMD Abstract: 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD Text: General Semiconductor Rectifiers and Voltage Suppressors Schottky Rectifiers Mfr.Õs Type IF AV (A) 1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 SS14 SS16 SGL41-40 SS34 MBRB1045 MBRB1060 MBRB2045CT MBR745 MBR1045 MBR1060 MBR1645 MBR2045CT MBR2545CT MBR3045PT	Original	DO-204AC DO-15) 1N5817 DO-204AL DO-41) 1N5818 1N5819 UF4007 SMD 1N5822 SMD smd UF4007 SS34 DO-214AC 1n5408 smd SMD DO-214AC SMA UF4007 smd package P6KE33a 1N5822 SMD PACKAGE 1N4004 SMD	PDF
Untitled Abstract: No abstract text available Text: 1N5817, 1N5818, 1N5819 www.vishay.com Vishay General Semiconductor Schottky Barrier Plastic Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation	Original	1N5817, 1N5818, 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41	Original	1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC J-STD-002B	PDF
1N5819 General Semiconductor Abstract: 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41	Original	1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 1N5819 General Semiconductor 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D J-STD-002B	PDF
1N5817 Abstract: 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41	Original	1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 18-Jul-08 1N5818 1N5819 DO-204AL JESD22-B102 J-STD-002 1N5819 General Semiconductor 1N5819 Vishay	PDF
1N5817 diode Abstract: datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41	Original	1N5817, 1N5818, 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC 08-Apr-05 1N5817 diode datasheets diode 1n5819 1/1N5819 1n5819 data sheet datasheets diode 1n5818 1N5817 1N5818 1N5819 DO-204AL JESD22-B102D	PDF
specifications on 1n5818 Abstract: No abstract text available Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation DO-204AL DO-41	Original	1N5817 1N5819 DO-204AL DO-41) 2002/95/EC 2002/96/EC J-STD-002 JESD22-B102 specifications on 1n5818	PDF
1N5817 MELF Abstract: 1n5819 melf vishay melf MELF Package 1N5817 1N5818 1N5819 DO-204AL melf Schottky glass MELF dimensions Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free	Original	1N5817 1N5819 DO-204AL DO-41) DO-204AL MIL-STD-750, 50mVp-p 4-Sep-02 1N5817 MELF 1n5819 melf vishay melf MELF Package 1N5818 1N5819 melf Schottky glass MELF dimensions	PDF
1n5819 melf Abstract: melf Schottky glass VISHAY 1N5819 vishay melf 1N5817 1N5818 1N5819 DO-204AL 1N5817 MELF Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free	Original	1N5817 1N5819 DO-204AL DO-41) DO-204 MIL-STD-750, 50mVp-p 25-Jun-02 1n5819 melf melf Schottky glass VISHAY 1N5819 vishay melf 1N5818 1N5819 DO-204AL 1N5817 MELF	PDF
1n5819 vishay make Abstract: No abstract text available Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	1N5817 1N5819 22-B106 2002/95/EC 2002/96/EC DO-204AL DO-41) 2011/65/EU 1n5819 vishay make	PDF
1N5817 MELF Abstract: 1n5819 melf MELF dimensions Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free	Original	1N5817 1N5819 DO-204AL DO-41) 50mVp-p 09-Feb-04 1N5817 MELF 1n5819 melf MELF dimensions	PDF
Untitled Abstract: No abstract text available Text: 1N5817 thru 1N5819 Vishay Semiconductors formerly General Semiconductor Schottky Barrier Rectifiers Features DO-204AL DO-41 • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low power loss, high efficiency • For use in low voltage high frequency inverters, free	Original	1N5817 1N5819 DO-204AL DO-41) DO-204AL MIL-STD-750, 50mVp-p 02-Aug-04	PDF
1N5817 Abstract: 1N5818 1N5819 DO-204AL J-STD-002 Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	1N5817 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 11-Mar-11 1N5818 1N5819 DO-204AL J-STD-002	PDF
Untitled Abstract: No abstract text available Text: 1N5817 thru 1N5819 Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106	Original	1N5817 1N5819 22-B106 DO-204AL DO-41) 2002/95/EC 2002/96/EC 2002/95/EC.	PDF

1N5818 Abstract: No abstract text available Text: 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 1.0 A VRRM 20 V, 30 V, 40 V IFSM 25 A VF 0.45 V, 0.55 V, 0.60 V Tj max. 125 °C DO-204AL (DO-41) Features Mechanical Data • • • •	Original	1N5817, 1N5818, 1N5819 DO-204AL DO-41) J-STD-002B JESD22-B102D 1N5818	PDF
EQUIVALENT BYD33D Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and	Original	PBYR3045WT BYD73D CTB34M BYD73G SB1035 PBYR1040 1N5059 SB1040 EQUIVALENT BYD33D 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent	PDF
Untitled Abstract: No abstract text available Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed	Original	M1910B/C M1910B/C M1910C IRF840 10uH/1A 1N5819 M1910C 500mA	PDF
Untitled Abstract: No abstract text available Text: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • • 1.0 ampere operation at TA = 90°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE	Original	1N5817 1N5819 DO-41 1N5817 1N5818	PDF
ac dc led constant current driver Abstract: No abstract text available Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed	Original	M1910B/C M1910B/C M1910C 500mA 015X45 ac dc led constant current driver	PDF
BU4508DX equivalent Abstract: BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent Text: 6535 07-03-2001 06:32 Pagina 1 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210	Original	BT148-600R BT148-400R BU4508DX equivalent BUT11APX equivalent S0806MH P0201MA TO92 BT136 application note diode cross reference BYW96E ct 2A05 diode BU2508Dx equivalent ST2001HI equivalent BU2508DF equivalent	PDF
BT136-600E equivalent Abstract: D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent Text: “Philips Type” refers to closest Philips alternative or equivalent if available. Always consider the application and compare data specifications before recommending the suitable Philips type. Notes: 1 - dual device. 2 - competitor RDS on falls between two Philips types, hence either stated device may be suitable.	Original	10TQ045S 11DQ03 11DQ04 11EQ03 11EQ04 11EQS 15DF4 1N3645 BT136-600E equivalent D2499 equivalent D1878 equivalent BT139-600 equivalent C4927 d1577 d1554 C5386 c5129 e13005 equivalent	PDF
1N5817 Abstract: 1N5818 1N5819 Text: 1N5817 - 1N5819 Schottky Barrier Rectifier Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 plastic case COLOR BAND DENOTES CATHODE	Original	1N5817 1N5819 DO-41 1N5817 1N5818 1N5818 1N5819	PDF
1N4001 zener diode Abstract: LM2575-ADJ Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram Text: Order this document by AN1593/D Motorola Semiconductor Application Note AN1593 High Efficiency 1A Battery Charger Using the LM2575-ADJ and MC33341 PRELIMINARY INFORMATION by Ondrej Pauk Industrial System Application Laboratory, Roznov CZ Figure 1. High Efficiency Battery Charger Demonstration Board.	Original	AN1593/D AN1593 LM2575-ADJ MC33341 MC33341 1N4001 zener diode Car Battery 12V pulse charger diode 1n5819 1N4001 general diode sample schematic diagram 12v battery charger LM2575 step up converter 12V DC to 19V dC converter schematic diagram schematic diagram 24V NiMh charge controller 12V cell phone charger circuit diagram	PDF
Untitled Abstract: No abstract text available Text: 1N5819 asi SCHOTTKY RECTIFIER PACKAGE STYLE D O -41 Î DESCRIPTION: t . O 25 (25.4 The 1N5819 is a General Purpose Schottky Rectifier Designed for use in Switching Power Supply Applications. yih MIN J .107 (2.7Ì .080(2.0) .205(5.2) .160(4.1) MAXIMUM RATINGS	OCR Scan	1N5819 1N5819	PDF

Privacy Settings

1N5819 GENERAL SEMICONDUCTOR Search Results

1N5819 GENERAL SEMICONDUCTOR Result Highlights (5)

1N5819 GENERAL SEMICONDUCTOR Datasheets Context Search

UF4007 SMD

Untitled

Untitled

1N5819 General Semiconductor

1N5817

1N5817 diode

specifications on 1n5818

1N5817 MELF

1n5819 melf

1n5819 vishay make

1N5817 MELF

Untitled

1N5817

Untitled

1N5818

EQUIVALENT BYD33D

Untitled

Untitled

ac dc led constant current driver

BU4508DX equivalent

BT136-600E equivalent

1N5817

1N4001 zener diode

Untitled