DIODE 1N5822
Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
DIODE 1N5822
1N5820RL
1N5821
1N5821RL
1N5822RL
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PDF
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1N5821
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
Surfa5820
1N5821
1N5821
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PDF
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1N5822RL
Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
r14525
1N5820/D
1N5822RL
1N5820RL
1N5821
1N5821RL
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
SurfaN5820
1N5821
1N5821
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PDF
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1N5822
Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
DIODE 1N5822
FULL WAVE RECTIFIER CIRCUITS
1N5820-D
1N5822 data sheet
1N5822 PACKAGE
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
sine wave inverter circuit diagram
1N5820RL
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PDF
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half bridge LLC inverter
Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
half bridge LLC inverter
diode 1n5822g
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
1N5821RL
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PDF
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5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
FULL WAVE RECTIFIER CIRCUITS
half bridge LLC inverter
"Power Diode"
10 Ampere Schottky bridge
rectifier diode assembly
THERMAL RUNAWAY IN RECTIFIER
DIODE T28
3 diodes 3 phase half-wave rectifier
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PDF
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1N5822 PACKAGE
Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5822 PACKAGE
1N5821
half wave rectifier LLC
1N5820G
1N5820RL
1N5820RLG
1N5821G
1N5821RL
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1N5820
Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820G
1N5820RL
1N5820RLG
1N5821
1N5821G
DIODE T28
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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1N5820
Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
1N5820RL
1N5821
1N5821RL
1N5822RL
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PDF
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1N5822
Abstract: No abstract text available
Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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Original
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1N5820,
1N5821,
1N5822
1N5820
1N5822
1N5820/D
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PDF
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DIODE 1N5822
Abstract: 1N5821-T3 1N5820 1N5820-T3 1N5820-TB 1N5821 1N5821-TB 1N5822 RS-296-E
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B ! Low Power Loss, High Efficiency ! High Surge Current Capability
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Original
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
DIODE 1N5822
1N5821-T3
1N5820
1N5820-T3
1N5820-TB
1N5821
1N5821-TB
1N5822
RS-296-E
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PDF
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FULL WAVE bridge RECTIFIER CIRCUITS
Abstract: 1N5822 1N5820 1N5821 TP2050 1N5820-D Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Data Sheet 1N5820 1N5821 1N5822 Designer's Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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Original
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
FULL WAVE bridge RECTIFIER CIRCUITS
1N5821
TP2050
1N5820-D
Motorola 1N5820
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 – 1N5822 WTE POWER SEMICONDUCTORS Pb 3.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current Capability A B Low Power Loss, High Efficiency High Surge Current Capability
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Original
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1N5820
1N5822
DO-201AD
DO-201AD,
MIL-STD-202,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N5820 – 1N5822 3.0A SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 80A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency
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Original
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1N5820
1N5822
DO-201AD,
MIL-STD-202,
DO-201AD
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PDF
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1N5822 MELF
Abstract: 1N6864 1N6864US 1N5822US JANHCA1N5822 1N5822 JANTX 1N5822 schottky barrier type rectifier 30v 3a 1N686 1n5822 BL
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 10 November 2007. MIL-PRF-19500/620G 10 August 2007 SUPERSEDING MIL-PRF-19500/620F 18 August 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, HERMETIC, DIODE, SILICON, RECTIFIER,
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Original
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MIL-PRF-19500/620G
MIL-PRF-19500/620F
1N5822
1N5822US,
1N6864
1N6864US,
MIL-PRF-19500.
1N5822 MELF
1N6864US
1N5822US
JANHCA1N5822
1N5822 JANTX
schottky barrier type rectifier 30v 3a
1N686
1n5822 BL
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PDF
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1NS820
Abstract: No abstract text available
Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide
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OCR Scan
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1N5820
1N5821
1N5822
1NS820
1N5822
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PDF
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n5822
Abstract: 1N5B22 diode marking r6j SCHOTTKY BRIDGE RECTIFIERS Motorola 1N5820
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet 1N5820 1N5821 1N5822 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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OCR Scan
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1N5820/D
1N5820
1N5821
1N5822
1N5B22
n5822
diode marking r6j
SCHOTTKY BRIDGE RECTIFIERS
Motorola 1N5820
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 1N5820/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 1N5820 1N5821 1N5822 A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. S ta te -o f-th e -a rt geometry features chrome barrier metal,
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OCR Scan
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1N5820/D
1N5820
1N5821
1N5822
1N5820
1N5822
1N5821
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PDF
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1NS820
Abstract: MBR320P schottky rectifier motorola mbr 1N5821 equivalent bc 108c MBR320P-340P ATID MBR340P 1N5820 1N5822
Text: 1N5820 MBR320P 1N5821 MBR330P 1N5822 MBR340P MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA D e s ig n e r s D a ta . S h e e t SCH O TTK Y B A R R IE R R E C T IF IE R S A X IA L LEAD R EC TIF IER S ' . . . employing the Schottky Barrier principle in a large area metal-tosilicon
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OCR Scan
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1N5820
MBR320P
1N5821
MBR330P
1N5822
MBR340P
1NS820
schottky rectifier motorola mbr
equivalent bc 108c
MBR320P-340P
ATID
MBR340P
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PDF
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1N5822
Abstract: No abstract text available
Text: Philips Semiconductors APX fc,b53T31 00EbT34 Tflb Controlled avalanche Schottky Product specification N5820ID/21ID/22ID barrier diodes N AMER PHILIPS/DISCRETE DESCRIPTION Schottky barrier diodes in hermetically sealed SOD84A Implosion Diode ID envelope,
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OCR Scan
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b53T31
00EbT34
N5820ID/21ID/22ID
OD84A
1N5820
1N5821
1N5822
1N5822
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PDF
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N5821
Abstract: 1N5821 diode do-201
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAJOR PRODUCTS CHARACTERISTICS I f a v 3A V rrm 40 V Vf 150°C Tj (max) 0.475 V FEATURES AND BENEFITS • ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP
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OCR Scan
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1N582x
D0-201
N5821
1N5821
diode do-201
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N582x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS 3A I f a v V rrm 40 V Tj 150°C Vf (max) 0.475 V FEATURES AND BENEFITS • VERY SMALL CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ EXTREMELY FAST SWITCHING ■ LOW FORWARD VOLTAGE DROP
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OCR Scan
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1N582x
D0-201
1N5820
1N5821
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PDF
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