5082-3080
Abstract: 1N5767 1N5957SERIES diode 5082-3080 1N5957
Text: 1N5767 5082-3080 SERIES 1N5957SERIES KEY FEATURES DESCRIPTION Both switch and attenuator applications. The 1N5957 is primarily used as an attenuator PIN diode and is particularly suitable wherever current controlled, wide dynamic range resistance elements are required. The 1N5957 has also been
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1N5767
1N5957SERIES
1N5957
1N5767
5082-3080
1N5957SERIES
diode 5082-3080
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Untitled
Abstract: No abstract text available
Text: 1N5913B - 1N5957B SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)
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1N5913B
1N5957B
DO-41
UL94V-O
MIL-STD-202,
1N5950B
1N5951B
1N5952B
1N5953B
1N5954B
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Untitled
Abstract: No abstract text available
Text: 1N5957 Diodes General Purpose PIN Diode Military/High-RelN Volt Req. V 100 @I(R) (A) (Test Condition)10u r(s) Max.(ê) Series Resist.3.5 @If (A)100m Ct{Cj} Nom. (F) Junction Cap.400f Carrier Lifetime (S)1.5u @I(F) (test) (A)10m @I(R) (A) (Test Condition)
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1N5957
400mW;
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1N5913A
Abstract: 1N5914A 1N5915A 1N5916A 1N5917A 1N5918A 1N5957A
Text: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 V Z : 3.3 - 240 Volts P D : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)
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1N5913A
1N5957A
DO-41
UL94V-O
MIL-STD-202,
1N5950A
1N5951A
1N5952A
1N5953A
1N5954A
1N5914A
1N5915A
1N5916A
1N5917A
1N5918A
1N5957A
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1N5913B
Abstract: 1N5914B 1N5915B 1N5916B 1N5957B
Text: Certificate TH97/10561QM 1N5913B - 1N5957B Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108 (2.74) 0.079 (1.99) FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation
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TH97/10561QM
1N5913B
1N5957B
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
1N5914B
1N5915B
1N5916B
1N5957B
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1N5913A
Abstract: 1N5914A 1N5915A 1N5916A 1N5957A
Text: Certificate TH97/10561QM 1N5913A - 1N5957A Certificate TW00/17276EM SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108(2.74) 0.079 (1.99) FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation
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TH97/10561QM
1N5913A
1N5957A
TW00/17276EM
DO-41
UL94V-O
MIL-STD-202,
1N5952A
1N5953A
1N5954A
1N5914A
1N5915A
1N5916A
1N5957A
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zener 1n5921A
Abstract: 1N5913A 1N5914A 1N5915A 1N5957A
Text: TH97/2478 1N5913A - 1N5957A TH09/2479 IATF 0060636 SGS TH07/1033 SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 3 Watts 1.00 25.4 MIN. 0.108 (2.74) 0.078 (1.99) FEATURES : * Complete Voltage Range 3.3 to 240 Volts * High peak reverse power dissipation
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TH97/2478
1N5913A
1N5957A
TH09/2479
TH07/1033
DO-41
UL94V-O
MIL-STD-202,
1N5950A
1N5951A
zener 1n5921A
1N5914A
1N5915A
1N5957A
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1N5913A
Abstract: 1N5914A 1N5915A 1N5916A 1N5917A 1N5918A 1N5957A
Text: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 VZ : 3.3 - 240 Volts PD : 1.5 Watts FEATURES : * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)
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1N5913A
1N5957A
DO-41
UL94V-O
MIL-STD-202,
1N5914A
1N5915A
1N5916A
1N5917A
1N5918A
1N5957A
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Untitled
Abstract: No abstract text available
Text: 1N5913A - 1N5957A SILICON ZENER DIODES DO - 41 V Z : 3.3 - 240 Volts P D : 1.5 Watts FEATURES : * * * * Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability Low leakage current 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0)
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1N5913A
1N5957A
DO-41
UL94V-O
MIL-STD-202,
1N5950A
1N5951A
1N5952A
1N5953A
1N5954A
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Untitled
Abstract: No abstract text available
Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N5913A - 1N5957A SILICON ZENER DIODES
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1N5913A
1N5957A
DO-41
UL94V-O
MIL-STD-202,
1N5949A
1N5950A
1N5951A
1N5952A
1N5953A
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diode 5082-3080
Abstract: 1N5767 5082-3080 1N5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 S E R IE S Features • • • • Useful attenuation from 1 i*A to 100 m A bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
diode 5082-3080
5082-3080
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MT29KZZZ4D4RGFAK-5 W
Abstract: No abstract text available
Text: Microsemi PIN Diodes — Part Number i Microsemi I UPP9401 UM9401 UM9401F UM9401SM UM9402 UM9415 UM9415SM UM9301 UM9301SM 1N5767 1N5957 UM6601 UM6001 UM7301 UM7301SM UM7001 UM7001SM UM7501 UM6201 UM9441 UM7101 UM7101SM UM9601 UM9603 UM9605 UM9607 UPP1001 UM9701
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UPP9401
UM9401
UM9401F
UM9401SM
UM9402
UM9415
UM9415SM
UM9301
UM9301SM
1N5767
MT29KZZZ4D4RGFAK-5 W
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Untitled
Abstract: No abstract text available
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 mA to 100 mA bias. Capacitance below 0.4 pF. Low distortion in switches and attenuators. Rugged Microsemi construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
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1N SERIES DIODE
Abstract: 1N5767 diode 5082-3080 1N5957 2000Q 1N5957SERIES unitrode diode iN5957
Text: PIN DIODE 1N5767 5082 - 3080 SERIES 1N5957 SERIES Features • • • • Useful attenuation from 1 i*Ato 100 mA bias. Capacitance below 0.4 pF. Low distortion in sw itches and attenuators. Rugged Unitrode construction. Description The 1N5767 and 1N5957 PIN diodes are
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1N5767
1N5957
1N5767
1N5957
1N SERIES DIODE
diode 5082-3080
2000Q
1N5957SERIES
unitrode diode
iN5957
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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1N5913A
Abstract: 1N5914A 1N5915A 1N5916A 1N5917A D041
Text: 5YHSEMI SEMICONDUCTOR 1N5913A - 1 N5957A SILICON ZENER DIODES D O -41 Vz : 3.3 - 240 Volts Pd : 1.5 Watts FEATURES : * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Complete Voltage Range 3.3 to 200 Volts High peak reverse power dissipation High reliability
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1N5913A
-1N5957A
UL94V-0
MIL-STD-202,
Tem29
1N5943A
1N5944A
1N5945A
1N5946A
1N5947A
1N5914A
1N5915A
1N5916A
1N5917A
D041
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