1N60 diode
Abstract: diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
Fax0755-8324
1N60 diode
diode 1n60
1N60
1N60 Schottky
1N60 diode resistance
1N60P
Diode Equivalent 1N60
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1n60 diode
Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
200mA
1-Sep-2009
1n60 diode
1n60
diode 1n60
1N60 Schottky
DIODE 1n60p
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1N60 diode
Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir
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1N60P
DO-35
DO-35
1N60 diode
diode 1n60
1N60
1N60P
1N60P, DO-35
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SMALL SIGNAL SCHOTTKY DIODES DO-35
Abstract: 1N60 1N60P diode 1n60 1n60 diode 1N60 Schottky
Text: 1N60/1N60P Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS P b Lead Pb -Free Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching Mechanical Data:
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1N60/1N60P
30m/50m
40/45VOLTS
DO-35
DO-35
23-Jan-07
1N60P
SMALL SIGNAL SCHOTTKY DIODES DO-35
1N60
1N60P
diode 1n60
1n60 diode
1N60 Schottky
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Untitled
Abstract: No abstract text available
Text: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency
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1N60P
DO-35
DO-35
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Untitled
Abstract: No abstract text available
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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1N60/1N60P
1N60P
1-Jan-2006
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1n60 diode
Abstract: diode 1n60 1N60 1N60 diode resistance 1N60P DIODE 1n60p 1N60P, DO-35
Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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Original
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1N60/1N60P
1N60P
200mA
1-Nov-2006
1n60 diode
diode 1n60
1N60
1N60 diode resistance
DIODE 1n60p
1N60P, DO-35
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1N60 diode
Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
Text: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter
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Original
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1N60/1N60P
1N60P
200mA
1N60 diode
diode 1n60
1N60
Diode Equivalent 1N60
1N60 diode resistance
1N60P
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PDF
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1N60P
Abstract: 1N60P, DO-35 1N60
Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODES Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes FEATURES DO-35 GLASS Fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed
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1N60P
DO-35
MIL-STD-750,
1N60P
1N60P, DO-35
1N60
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SMALL SIGNAL SCHOTTKY DIODES DO-35
Abstract: 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE
Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
DB-046
SMALL SIGNAL SCHOTTKY DIODES DO-35
1N60P
diode 1n60
1N60 diode
1N60P, DO-35
TC1N60
1N60
DO35
1N60 PACKAGE
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Untitled
Abstract: No abstract text available
Text: Diodes SMD Type Surface Mount Schottky Barrier Diode 1N60 SOD-323 Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time. +0.1
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OD-323
200mA
200mA
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11n60p
Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p
Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
11n60p
SMALL SIGNAL SCHOTTKY DIODES DO-35
1n60
DIODE 1n60p
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diode 1n60
Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage
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DO-35
1N60P
DB-100
diode 1n60
1n60 diode
1N60P
1N60
Diode Equivalent 1N60
1N60 PACKAGE
SMALL SIGNAL SCHOTTKY DIODES DO-35
TC1N60
DO35
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1n60
Abstract: No abstract text available
Text: 1N60 Small Signal Schottky Diodes VOLTAGE RANGE: 40V CURRENT: 0.03 A Features DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics
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DO--35
30MHz
1n60
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1N91 DATASHEET
Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
Text: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7
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1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
1N91 DATASHEET
DO-7
1N34A
Diode Equivalent 1N34A
1N92
1N91
1N91 diode
1N270
1N295
1N60
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1n60
Abstract: 1N60P 1N60 Schottky
Text: MCC 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35
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1N60P
DO-35
1N60P
150mA
500mA
250K/W
200mA
1n60
1N60 Schottky
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
1N60P
150mA
500mA
250K/W
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1N60P
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
1N60P
50mand
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 1N60 1N60P omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number
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1N60P
DO-35
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2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
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OCR Scan
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1N34A
1N55AB
1N100
1N102
1N103
1N104
1N107
1N108
1N111/
1N117
2N2222A mps
2N512AB
2n2222 mps
1N1096
1N589
1n4007 - 2n4001
2N698 SCR
1N233A
1N20461
2N3304
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1N283
Abstract: No abstract text available
Text: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A
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OCR Scan
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1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
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Untitled
Abstract: No abstract text available
Text: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE NO. CASI DO-7 TECHNOLOGY Vr r m 10 VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 50 1.0 5.0 . POINT CONTACT POINT CONTACT
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OCR Scan
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1N34A
1N67A
1N87A
1N100A
1N191
1N276
1N277
1N283
1N295
1N3666
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1N93
Abstract: 1N283 1N34A 1N276
Text: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE WO, CASE DO-7 io VF »F trr 00 mA (Vi (mA) (n*) MAX MAX MAX vrrm TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT
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OCR Scan
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1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
1N93
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1N295
Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
Text: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0
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OCR Scan
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1N34A
1N67A
1N87A
1N100A
1N191
1N192
1N270
1N276
1N277
1N283
1N295
diodes 1N34A
1N91 diode
DO-7
1N93
1N91
1N92
1N4502
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