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    1N6386 Price and Stock

    Vishay Semiconductors 1N6386-E3-73

    TVS DIODE 18VWM 25.5VC 1.5KE
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    DigiKey 1N6386-E3-73 Ammo Pack
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    Vishay Semiconductors 1N6386-E3-54

    TVS DIODE 18VWM 25.5VC 1.5KE
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    Vishay Semiconductors 1N6386HE3_A-D

    TVS DIODE 18VWM 25.5VC 1.5KE
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    Vishay Semiconductors 1N6386HE3_A-C

    TVS DIODE 18VWM 25.5VC 1.5KE
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    New Jersey Semiconductor Products, Inc. 1N6386

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 1N6386 2,414 2
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    Find more 1N6386 price and stock on Findchips.com

    1N6386 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N6386 MDE Semiconductor 18.00V 50A 1500W peak pulse power glass passivated junction transient voltage suppressor Original PDF
    1N6386 Microsemi Transient Voltage Suppressor Original PDF
    1N6386 Motorola Zener Transient Voltage Suppressors Unidirectional and Bidirectional Original PDF
    1N6386 International Semiconductor TRANSIENT VOLTAGE SUPPRESSOR Scan PDF
    1N6386 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N6386-E3/54 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE Original PDF
    1N6386-E3/73 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE Original PDF
    1N6386HE3/51 Vishay Semiconductor Diodes Division Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE Original PDF
    1N6386HE3/54 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE Original PDF
    1N6386HE3/73 Vishay General Semiconductor TVS - Diodes, Circuit Protection, TVS DIODE 18VWM 25.5VC 1.5KE Original PDF
    1N6386HE3_A/C Vishay Semiconductor Diodes Division Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE Original PDF
    1N6386HE3_A/D Vishay Semiconductor Diodes Division Circuit Protection - TVS - Diodes - TVS DIODE 18V 25.5V 1.5KE Original PDF
    1N6386RL4 On Semiconductor 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressor Original PDF

    1N6386 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC.

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors Major Ratings and Characteristics VWM 5.0 V to 18 V PPPM 1500 W PD 6.5 W IFSM 200 A Tj max. 175 °C Case Style 1.5KE Features Mechanical Data • Glass passivated chip junction


    Original     		PDF ICTE18C 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 1N6386 Diodes Bidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC -65 Maximum Operating Temp (øC)175õ V(BR) Nom.(V)Rev.Break.Voltage21 @I(R) (A) (Test Condition)1m V(RWM) (V) Work.Pk.Rev.Voltage18 I(PPM) Max.(A)Pk.Pulse Current50


    Original     		PDF 1N6386 Voltage21 Voltage18 Current50 Voltage25 StyleAxial-10

    28 volt transzorb

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		PDF ICTE18C, 1N6373 1N6378 1N6382 1N6386 265OC/10 08-Apr-05 28 volt transzorb

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 150lectual 18-Jul-08 1N6374 1N6386 ICTE18C J-STD-002

    88356

    Abstract: 1N6373 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08 88356 1N6374 1N6386 ICTE18C ICTE-18C JESD22-B102 J-STD-002

    1N6373

    Abstract: 1N6374 1N6386 ICTE18C J-STD-002
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 1N6374 1N6386 ICTE18C J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 www.vishay.com Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a


    Original     		PDF ICTE18C, 1N6373 1N6386 22-B106 AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    1N6373

    Abstract: 88356 1N6382 1N6378 1N6386 ICTE18C
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6378 & 1N6382 thru 1N6386 Vishay Semiconductors formerly General Semiconductor TRANSZORB Transient Voltage Suppressors Case Style 1.5KE d e d n nge e t x E e Ra Features g a t l Vo 1.0 25.4 MIN. 0.210 (5.3) 0.190 (4.8)


    Original     		PDF ICTE18C, 1N6373 1N6378 1N6382 1N6386 23-May-03 88356 1N6378 1N6386 ICTE18C

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: ICTE5.0 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate duty cycle :


    Original     		PDF ICTE18C, 1N6373 1N6386 2002/95/EC 2002/96/EC 18-Jul-08

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . DIODES Diodes - Protect Against Transient Voltage Surge and ESD T VS and ESD Protection Diodes for TVS and ESD Protection Featured Products Tr a n s Z o r b A v a l a n c h e Tr a n s i e n t Vo l t a g e S u p p r e s s o r s


    Original     		PDF DiodesA9337-2726 VMN-SG2124-1401

    XD 105 94V-0

    Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-1102 XD 105 94V-0 BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG

    1N623

    Abstract: 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. 92253 Tel: 760-564-8656 Fax: 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com JEDEC AND INDUSTRY STANDARD DEVICES MANUFACTURED JEDEC JEDEC


    Original     		PDF 1N6267 1N6267A 1N6268 1N6268A 1N6269 1N6269A 1N6270 1N6270A 1N6271 1N6271A 1N623 1N6377 1N6281A 1N6284 1N6269A MPTE-15 1N6267 1N6267A 1N6273 1N6383

    1N6377

    Abstract: 1N6373 1N6381 1N6382 1N6385 1N6389 ICTE15C MPTE-45 ICTE-12 equivalent MPTE-15
    Text: MDE Semiconductor, Inc. 78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com ICTE5.0 to ICTE15C MPTE-5 to MPTE-45 1N6373 to 1N6381 and 1N6382 to 1N6389


    Original     		PDF ICTE15C MPTE-45 1N6373 1N6381 1N6382 1N6389 ICTE-10C ICTE-12C ICTE-15C ICTE-18C 1N6377 1N6385 1N6389 MPTE-45 ICTE-12 equivalent MPTE-15

    1N6389

    Abstract: 1N6373 1N6381 1N6382 1N6383 1N6384 ICTE-10C ICTE-36C MPTE-45C
    Text: 1N6382 - 1N6389 Series ICTE-10C - ICTE-36C, MPTE-8C - MPTE-45C 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		PDF 1N6382 1N6389 ICTE-10C ICTE-36C, MPTE-45C) r14525 1N6382/D 1N6373 1N6381 1N6383 1N6384 ICTE-36C MPTE-45C

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    TRANSISTOR SMD MARKING CODE 1BW

    Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
    Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0002-0710 TRANSISTOR SMD MARKING CODE 1BW SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801

    Untitled

    Abstract: No abstract text available
    Text: MPTE/1 N6 3 7 3 - 1 N 6 3 8 9 series MPTE SERIES 1500 WATT AXIAL TRANSIENT VOLTAGE SUPPRESSORS 01.016*0.050 The MPTE series 1500 W transient suppressors are designed specifically for the protection of CMOS, NMOS. BiMOS, and other intergrated circuits available today for TTL,


    OCR Scan     		PDF 1000/j Vslgss50mVpH>

    Untitled

    Abstract: No abstract text available
    Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s P T E / 1 N 6 3 7 3 ~~ 1N63^ O Y O Q M Control over power 01.O16±O.O5O im s ib ie Prolection FEATURES When no problems exist, Oydom TVS • Qass passivated junction Diodes are totally invisible to the circuits


    OCR Scan     		PDF 1-619-71S7280 1500pcs) MPTE995-5000

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845