1N6391 diode
Abstract: 1N6391 40HFL40S02 DO-203AA IRFP460 25A45
Text: PD-2.079 rev. B 12/97 1N6391 SCHOTTKY RECTIFIER 25 Amp Description/Features Major Ratings and Characteristics The 1N6391 Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175° C junction
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1N6391
1N6391
IRFP460
40HFL40S02
1N6391 diode
40HFL40S02
DO-203AA
IRFP460
25A45
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1N6391 diode
Abstract: 1N6391 DO-203AA
Text: 1 1N6391 Naina Semiconductor emiconductor Ltd. Schottky Barrier Rectifier Diode Features • Fast Switching • Low forward voltage drop, VF • Guard ring protection • High surge capacity • High efficiency, low power loss Electrical Ratings TC = 250C, unless otherwise noted
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1N6391
DO-203AA
203AA
1N6391 diode
1N6391
DO-203AA
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Untitled
Abstract: No abstract text available
Text: 1N6391 Qualified Levels: JAN, JANTX, JANTXV and JANS Schottky Barrier Rectifier Available on commercial versions Qualified per MIL-PRF-19500/553 DESCRIPTION This schottky barrier diode provides low forward voltage and offers military grade qualifications for high-reliability applications. This rugged DO-203AA rectifier is applicable for freewheeling
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1N6391
MIL-PRF-19500/553
DO-203AA
DO-203AA
T4-LDS-0137,
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1N6391
Abstract: MIL-PRF19500 FED-STD-H28 chamfer vqe 14 display 1N6391 JANTX
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 5 September 2009. INCH-POUND MIL-PRF-19500/553D 5 June 2009 SUPERSEDING MIL-PRF-19500/553C 10 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, SCHOTTKY BARRIER,
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MIL-PRF-19500/553D
MIL-PRF-19500/553C
1N6391,
MIL-PRF-19500.
1N6391
MIL-PRF19500
FED-STD-H28 chamfer
vqe 14 display
1N6391 JANTX
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203CNQ100
Abstract: 122NQ030R MBR1535 21FQ040 121NQ035 189NQ
Text: Schottky Diodes www.irf.com Part Number V RRM V I FAV @TC (A) (C) VFM @I FM I RM @VRWM E AS I AR 25°C 25°C (mA) (mA) (mJ) (A) Max T J (°C) Fax on Demand Number Case Outline Key Surface-Mount Packages SMB 10BQ100 100 1 152 0.78 10BQ015 15 10BQ040 40 10BQ060
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
10TQ035S
10TQ045S
203CNQ100
122NQ030R
MBR1535
21FQ040
121NQ035
189NQ
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209CmQ150
Abstract: K1760 408CMQ060 121NQ035 10BQ040 10BQ060 10BQ100 10TQ035S 10TQ045S 30BQ015
Text: Index International Rectifier Schottky Diodes I RM @ VRWM VFM@ I FM Part Num VRRM V I FAV@ T C (C) (A) 25°C (V) EAS (mJ) I AR 25°C (A) (mA) Max. T J (°C) Fax-on-Demand Notes Surface Mount SMB 10BQ100 10BQ015 10BQ040 10BQ060 100 15 40 60 1 1 1 1 152 78
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10BQ100
10BQ015
10BQ040
10BQ060
30BQ100
30BQ015
30BQ040
30BQ060
209CmQ150
K1760
408CMQ060
121NQ035
10BQ040
10BQ060
10BQ100
10TQ035S
10TQ045S
30BQ015
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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d234
Abstract: ID32 d231
Text: PD-2.Ö79A International [io r I Rectifier 1N6391 25 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics Description/Features Characteristics 1N6391 Units lF AV Rectangular 25* A 45 V waveform V RRM The 1N6391 Schottky rectifier has been optimized for low
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1N6391
1N6391
D-233
D-234
d234
ID32
d231
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30FQ045
Abstract: 1N6391 JANTX JANTXV1N6391
Text: PD-2.385 International IS Rectifier 30FQ045 1N6391 JAN1N6391 JANTX1N6391 JANTXV1N6391 [ MIL-S-19500/553 ] SCHOTTKY RECTIFIER 25 Amp Major Ratings and Characteristics Description/Features Characteristics 1N6391 Units V AV R ctengular waveform 25* A V 45 V
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30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
MIL-S-19500/553
1N6391
5S455
30FQ045,
30FQ045
1N6391 JANTX
JANTXV1N6391
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Untitled
Abstract: No abstract text available
Text: T -Q h ll - H i DUAL POWER SCHOTTKY DIODES TCB3045C 18A each, 45V P A C K A G E O U T LIN E • 30 Amp Peak, Common Cathode TO -204AA TO-3 • Two Schottky Rectifiers Similar to 1N6391 • Very Low Forward Voltage • Low Recovered Charge • Available in Three Hermetic Packages
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TCB3045C
-204AA
1N6391
-257AA
O-220
TCB3045C
O-247
1N6391,
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Untitled
Abstract: No abstract text available
Text: POWER SCHOTTKY RECTIFIERS 50A Pk, 45V 1N6391 JAN, JANTX, JANTXV FEATURES DESCRIPTION • Very Low Forward Voltage • Low Recovered Charge • Rugged Package Design DO-4 • High Efficiency for Low Voltage Supplies • 45V Blocking @ Rated T|max • 54V Repetitive Surge Voltage
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1N6391
MIL-S-19500/553
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200cnq050
Abstract: No abstract text available
Text: IN TER NAT IO NA L R E C T I F I E R HE D | 4055455 GG1DDE3 3 | r*-o 3 *«2 / Schottky Rectifiers 25 T O 440 A M P S ' f AV @ T C Part Number V RW M vF M @ 'r m T j = 125°C & 'fm Rated VRW M Max. Tj (V) (A) (°C) (A) (mfl) <°C) 200CNQ030 200CNQ035 200CNQ040
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200CNQ030
200CNQ035
200CNQ040
200CNQ045
200CNQ050
201CNQ
201CNQ035
201CNQ040
201CNQ045
201CNQ050
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1N6391 JANTX
Abstract: 1N6391
Text: POWER SCHOTTKY RECTIFIERS 50A Pk, 45V FEATURES DESCRIPTION • V e ry Low F o rw ard V o lta g e T h e 1 N 6 3 9 1 has a S c h o ttk y b a rrie r • Low Recovered Charge • Rugged Package Design DO-4 • High Efficiency fo r Low Voltage Supplies junction and is ideally suited for output
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1N6391
MIL-S-19500/553
1N6391
400/is
300/js
1N6391 JANTX
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60HQ100
Abstract: JANTX1N6392
Text: International Government and Space liQ R lR e c t i f i e r Schottky Diode Hermetic Packages 8-60 Amps Case Part Number VRRM V 'F(AV) @ (A) Tc •f (AV) @ t c VFM @ >FM 25°C(V) (C) Outline !r M @ v RWM 25°C(mA) Max. Tj Number (1) 5EQ100 8EQ045 100 45 8
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5EQ100
8EQ045
15CLQ100
20CLQ045
30FQ045
1N6391
JAN1N6391
JANTX1N6391
JANTXV1N6391
00-203AA
60HQ100
JANTX1N6392
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SC043H100
Abstract: SC090H150A sc090h150 SC125H100AWB sc066s060a SC090H045AWB sc043s040 SC043H100S SC066S060SW
Text: HU b ìb b i I n t e r n a t i o n a l R e c t if ie r 1 0) Wafer Part Number (3) Die Part Number («) Die'A' Length/Side (in.)mm Schottky Diodes (4) Bond Pad’8’ Length/Side (in.)mm Anode Metallization (topside) Process Tray Quantity Equivalent Finished Product
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SC043R100SW
SC043H100SWB
SC043S040SW
SC043S060SW
SC066H100AWB
SC066H100SWB
SC066S040AW
SC066S040SW
SC066S060AW
SC066S060SW
SC043H100
SC090H150A
sc090h150
SC125H100AWB
sc066s060a
SC090H045AWB
sc043s040
SC043H100S
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19T0015
Abstract: 12t0035
Text: In t e r n a t io n a l R e c tifie r w b b |[B Sdtoftky Diodes h* Vrrm Volt» If<a V) • Te A X P) Vf h OIfM (Vote) (2) E*S mi (3) (7)Irm O U r fbtadVRMM (Ampt) mA Mu l Tj X Nota FaçonDwnmd Numb« 25 25 30 30 4 4 125 125 125 125 125 125 (5) (5) (5) (5)
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31DQ03
31DQ04
31DQ05
31DQ06
31DQ09
31DQ10
50SQ080
50SQ100
80SQ035
80SQ040
19T0015
12t0035
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TRANSISTOR J 5804 NPN
Abstract: TRANSISTOR J 5804 TRANSISTOR J 5803 j 5804 transistor 1N6621
Text: PART NUMBER INDEX ni CR O S E M I CO RP / UIATERTOUN PART NU M BER I N 5614, 1N5615, 1N5616, 1N5617, 1N5618, 1N5619, 1N5620, I N 5622, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, J, JTX, JTXV JTXV JTXV JTXV JTXV JTXV JTXV JTXV 1N5767 1N5802 1N5802, J, JTX, JTXV
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1N5615,
1N5616,
1N5617,
1N5618,
1N5619,
1N5620,
1N5767
1N5802
1N5802,
1N5804,
TRANSISTOR J 5804 NPN
TRANSISTOR J 5804
TRANSISTOR J 5803
j 5804 transistor
1N6621
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B60C 800 Si
Abstract: 0/B60C 800 Si
Text: 1 I n t e r n a t io n a l R e c t i f i e r G o v e rn m e n t a n d S p a c e P ro d u c ts Paît Number 2 BV[)SS (Volts) RDS(on) (Ohms) Ip • Tc°25° (Amps) Id 9 TC«100" (Amps) Total Dos* Rating Rads (Si) Pd O Tc=25* (Watts) 15 7 15.3 12.7 6.0 24.3
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IRHN7254SE
IRHN7450SE
IRHNA73b
IRHNA7460SE
IRHN7C50SE
IRHNA7264SE
IRH72545E
IRHM7264SE
IRH7450SE
IRH7C50SE
B60C 800 Si
0/B60C 800 Si
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smd diode f54
Abstract: 18t0045 smd f54 209DMQ 20F0040 209DMQ150 50W005F 15CT0035 smd diode K10 209CMQ150
Text: Other Products from IR Schottky Diode Surface Mount - Discrete 0 .7 7 - 20 Am ps 'F AV @ TC Case Outline >RM@ Rated V r w m Part Number VRRM (A) 1.1 (°C) 10MQ040 00 40 92 (V) 0.51 10MQ060 10MQ090 60 90 0 .77 0 .77 110 110 0.57 0.65 _ _ 7.5 5.0 15MQ040
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10MQ040
10MQ060
10MQ090
15MQ040
10BQ015
10BQ040
10BQ060
10BQ100
30BQ015
30BQ040
smd diode f54
18t0045
smd f54
209DMQ
20F0040
209DMQ150
50W005F
15CT0035
smd diode K10
209CMQ150
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2N2222A mps
Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71
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1N34A
1N55AB
1N100
1N102
1N103
1N104
1N107
1N108
1N111/
1N117
2N2222A mps
2N512AB
2n2222 mps
1N1096
1N589
1n4007 - 2n4001
2N698 SCR
1N233A
1N20461
2N3304
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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