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    1N821 MOTOR Search Results

    1N821 MOTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67Z833SFTG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver / 3-Phase Brushless Motor Gate Driver / VVM(V)=-0.3~80 / P-WQFN40-0606-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    1N821 MOTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1n821

    Abstract: LM390
    Text: 1N821 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N821 Availability Online Store Diodes


    Original     		1N821 1N821 STV3208 LM3909N LM390 PDF

    1N821

    Abstract: 1N823 1N825A 1N825 ZENER 1N827 zener 1n825 1N825 Motorola motorola zener diodes 1N825 1N829
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed


    Original     		1N821 1N823 1N825 1N827 1N829 DO-204AH DO-35 1N825A 1N825 ZENER zener 1n825 1N825 Motorola motorola zener diodes PDF

    1N821

    Abstract: 1N827 1n829a 1N825 1N823 1N827A 1N823A 1N825A motorola ZENER 1N825 Motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passivated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed


    Original     		1N821 1N823 1N825 1N827 1N829 DO-35 1n829a 1N827A 1N823A 1N825A motorola ZENER 1N825 Motorola PDF

    1N827A

    Abstract: 1n825
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823.A 1N825.A 1N827.A 1N829.A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passi­ vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed


    OCR Scan     		1N821 1N823 1N825 1N827 1N829 DO-204AH DO-35 1N827A PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A Temperature-Compensated Zener Reference Diodes Temperature-compensated zener reference diodes utilizing a single chip oxide passi­ vated junction for long-term voltage stability. A rugged, glass-enclosed, hermetically sealed


    OCR Scan     		1N821 1N823 1N825 1N827 1N829 DO-35 PDF

    DO-204AA

    Abstract: JEDEC do-204aa MZ605 1N4782 1N4771A DO-204AA Package 1N4770A 1N4773A 1N4773 1N4772
    Text: For applications w here output voltage must remain within narrow limits during changes in input voltage, load resistance and temperature. Motorola guarantees all References D e­ vices to fall within the specified maximum voltage variations, A V z, at the specifically indicated test temperatures and test


    OCR Scan     		DO-204AA DO-204AH DO-35) PPM/1000 MZ605 MZ610 MZ620 JEDEC do-204aa 1N4782 1N4771A DO-204AA Package 1N4770A 1N4773A 1N4773 1N4772 PDF

    Zener Diode 3v 400mW

    Abstract: 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference"
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


    Original     		073713S 250mW, I713S DQQD114 Zener Diode 3v 400mW 1n821 "cross-reference" 1N825 apd 1N821-1N829 1n4575a "cross-reference" PDF

    1n4573

    Abstract: 1n4573a die 1N827A 1n4579 10823a 1C45 1n829 1n4573 die
    Text: M O T O R O L A SC O I O D E S / O P T O l 6367255 MOTOROLA SC 34 <D I O D E S / O P T O DE | b3fci7S55 0 0 3 0 1 1 0 3 | 34C 38118 T -//- D 0 5" SILICON ZENER DIODE DICE continued) 1C821 & 1C4565 — SERIES DIE NO. LINE SOURCE — DZD400 This die provides performance equal to or better than that


    OCR Scan     		b3fci7S55 DZD400 1C821 1C4565 1N821 1N829 1N4565 1N4584 1N4765 1N4784 1n4573 1n4573a die 1N827A 1n4579 10823a 1C45 1n4573 die PDF

    Untitled

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES S3E D 073713S QDDDDn 1 / - t{~ a -7 T C Z E N E R DIODES 250mW, TC Type DO-7 Case Voltage Maximumt mperature Dynamic Impedance TeS tability Z7T@ '7T n mV 15 96 10 96 15 48 48 10 19 15 10 19 15 9 10 9 15 5 10 5 Zener Voltage Test MIn. Max. Current


    Original     		073713S 250mW, DO-35 3713S PDF

    1N3157A

    Abstract: motorola 239 zener AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S'lE D LVJ 0737135 • • • • • 5 5 630 • A P D T r ^ - t o AMERICAN POWER DEVICES SELECTION GUIDE APD devices cross-reference to Motorola part numbers. For applications where output voltages must remain within narrow limits during changes in input voltage,


    Original     		DO-35 00DD115 1N3157A motorola 239 zener AMERICAN POWER DEVICES 1N938 PDF

    MTS102 - silicon temperature sensor

    Abstract: MTS102 motorola mts 102
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTS102 MTS103 MTS105 Silicon Tem perature Sensors D esign ed fo r use in te m p e ra tu re se n sin g a p p lic a tio n s in a u to m o tive , consum er and industrial products requiring low cost and high accuracy. •


    OCR Scan     		MTS102: MTS102 MTS103 MTS105 O-226AA MTS102, 1N821 MTS102 - silicon temperature sensor motorola mts 102 PDF

    MTS102

    Abstract: MTS102 - silicon temperature sensor MTS105 MTS103 ATC sensor transistor motorola 2n2646 2N2646 of595 CTO-92
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M T S 1 02 M TS103 M T S 1 05 S ilico n T e m p e ra tu re Sensors Designed for use in tem perature sensing applications in automotive, consumer and industrial products requiring low cost and high accuracy. • Precise Temperature Accuracy Over Extreme Temperature MTS102: ± 2°C


    OCR Scan     		MTS102: MTS102 MTS103 MTS105 O-226AA CTO-92) mts102, MTS102 - silicon temperature sensor MTS105 ATC sensor transistor motorola 2n2646 2N2646 of595 CTO-92 PDF

    mc7812

    Abstract: MTS102/D
    Text: MOTOROLA Order this document by MTS102/D SEMICONDUCTOR TECHNICAL DATA MTS102 MTS103 MTS105 Silicon Temperature Sensors Designed for use in temperature sensing applications in automotive, consumer and industrial products requiring low cost and high accuracy.


    Original     		MTS102/D MTS102 MTS103 MTS105 MTS102: 226AA MTS102/D* mc7812 MTS102/D PDF

    ma 1458

    Abstract: MZ3157 IN821 MZ827A MZ3154 MZ3156 MZ821 MZ823 1n823 equivalent MZ827
    Text: b £ O ?& > O UJ CO Ì¡ u lg io O O, lu ; s o n i a p è 2 « £ c 2 > . E3 £ o o u .5 n fa c « a 2 E <oz X o uj z U lte i§ s! I - P UJ < t oc acccc < Ui Ui CCÛ-z S uj UJ N S a i £0 ö> a» E . Q) E ? $ Q i H m m h . CM CM CM CM OOOOOO se io +i un u o o ,


    OCR Scan     		MZ821 MZ823 MZ825 MZ827 MZ935 MZ938 MZ941 MZ944 MZ3154 MZ3156 ma 1458 MZ3157 IN821 MZ827A 1n823 equivalent PDF

    B0239A

    Abstract: No abstract text available
    Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781


    Original     		D73713S DO-35 3713S B0239A PDF

    IN942

    Abstract: itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES S3E D 0737135 00000S1 7 T C Z E N E R DIODES 400 mW & 500 mW, TC Type Zener Voltage Test MIn. Max. Current ITT 1N940 1N940A 1N940B V V 8.55 9.45 mA 7.5 tZener impedance is derived from the 1kHz supenmposed on the test current. DO-7 Case


    Original     		00000S1 DO-35 00DD115 IN942 itt is 2.5-400 1N3156 1N3155 ITT GUIDE diode zener ITT zener diode AMERICAN POWER DEVICES 1N938 PDF

    UJT-2N2646 PIN DIAGRAM DETAILS

    Abstract: UJT-2N2646 1N5844 transistor GDV 64A motorola diode marking 925b Zener Diode SOT-23 929b 1N4042A Motorola 1n4504 1N5856B 1n5844 diode
    Text: Motorola TVS/Zener Device Data Alphanumeric Index of Part Numbers 1 Cross Reference and Index 2 Selector Guide for Transient Voltage Suppressors and Zener Diodes 3 Transient Voltage Suppressors Axial Leaded Data Sheets 4 Transient Voltage Suppressors Surface Mounted Data Sheets


    Original     		PDF

    1N3155

    Abstract: 1N9351 AMERICAN POWER DEVICES 1N938
    Text: AMERICAN POWER DEVICES 23E D • D73713S 0000020 S • T ^ T F O T T C Z E N E R DIODES DO-7 Case 250 mW, TC DO-7 Case Typet Nominal Zener Voltage V+ V Z t «- i o 1N4775 1N4775A 1N4776 1N4776A 1N4777 1N4777A 1N4778 1N4778A 1N4779 1N4779A 1N4780 1N4780A 1N4781


    Original     		D73713S DO-35 00DD115 1N3155 1N9351 AMERICAN POWER DEVICES 1N938 PDF

    UJT 2N2646

    Abstract: 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001
    Text: TVS/Zener Theory and Design Considerations Handbook HBD854/D Rev. 0, Jun−2005 SCILLC, 2005 Previous Edition © 2001 as Excerpted from DL150/D “All Rights Reserved’’ http://onsemi.com 1 Technical Information, Application Notes and Articles Zener Diode Theory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		HBD854/D Jun-2005 DL150/D NLAS3158/D UJT 2N2646 2N2646 pin diagram UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 pin diagram of UJT-2N2646 GE Transient Voltage Suppression Manual UJT THEORY AND CHARACTERISTICS 957B MDA2500 pn junction DIODE 1N4001 PDF

    UJT 2N2646

    Abstract: UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode
    Text: BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead


    Original     		BZX85C3V3RL DO-41 204AL) UJT 2N2646 UJT-2N2646 PIN DIAGRAM DETAILS UJT pin diagram 2N2646 UJT 2N2646 specification diode zener BZX 61 C 10 UJT 2N2646 PIN VIEW pin diagram of UJT-2N2646 varistor pdz 320 BZX 460 zener diode 1N4742A 12 volt zener diode PDF

    UJT 2N2646 specification

    Abstract: UJT 2N2646 5000 watts PURE SINE WAVE inverter schematic diagram UJT-2N2646 PIN DIAGRAM DETAILS Diode SOT-23 marking 15d UJT 2N2646 ratings 10kw inverter PURE SINE WAVE schematic diagram MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR ge digital energy match ups 2-GND MARKING QV sot23
    Text: 1SMA5.0AT3 Series 400 Watt Peak Power Zener Transient Voltage Suppressors Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener


    Original     		PDF

    UJT 2N2646 specification

    Abstract: GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram
    Text: 1N6373 - 1N6381 Series ICTE-5 - ICTE-36, MPTE-5 - MPTE-45 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors http://onsemi.com Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, high–energy transients. They have


    Original     		1N6373 1N6381 ICTE-36, MPTE-45) UJT 2N2646 specification GE Transient Voltage Suppression Manual Triac motor speed control UJT-2N2646 PIN DIAGRAM DETAILS marking dp U1 sot363 UJT pin identification TO-220 MOS UJT 2N2646 DO41 PACKAGE diode marking S6 sine wave UPS inverter circuit diagram PDF

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218 PDF

    MOTOROLA POWER TRANSISTOR

    Abstract: TO36 package 2N554 Motorola germanium transistor pnp 2N174 2N1545 motorola mesa transistors 1N2621A 2N398A 2N1358 JAN
    Text: m a r c h RESTRICTED WPS Document Ccx OtC _ "* "1 A R EP O R T ON MOTOROLA SE M IC O N D U C T O R R E L IA B IL IT Y D u rin g the past y ear great strides have been m a d e in M o to ro la 's Q uality A ssu ran ce P ro g ram to provide assurance o f reliability . . . as well as a reliable product.


    OCR Scan     		PDF