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    1N831 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N831 MicroMetrics X Band Point Contact Mixer Diode Original PDF
    1N831 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N831 Unknown Silicon Point Contact Mixer Diodes Scan PDF
    1N831 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N831 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N831A MicroMetrics Original PDF
    1N831A Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N831A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N831A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N831A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N831A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N831AM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N831B MicroMetrics Original PDF
    1N831B Advanced Semiconductor Silicon Point Contact Mixer Diodes Scan PDF
    1N831B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N831B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N831B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N831B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N831BM Advanced Semiconductor Silicon Point Contact Mixer Diode Scan PDF
    1N831BM Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N831 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Microwave Mixer Diodes

    Abstract: No abstract text available
    Text: 1N831 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 1N831 Availability Online Store Diodes


    Original     		PDF 1N831 1N831 Military/High-Rel00 STV3208 Microwave Mixer Diodes

    1N831

    Abstract: mixer diode
    Text: 1N831 SILICON MIXER DIODE DESCRIPTION: PACKAGE STYLE DO- 7 The ASI 1N831 is a Silicon Mixer Diode Designed for Applications Operating From 2.0 to 4.0 GHz. FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS


    Original     		PDF 1N831 1N831 mixer diode

    cp4071

    Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 68B09 SN74ALS04BN SN74ALS08N SN74ALS00AN CA3046 uA733 LM311P LM318 CA3094 78H05 cp4071 data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400

    1N831

    Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
    Text: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and


    Original     		PDF 1N831 1N831A 1N831B 1N831C 1N832 1N832A 1N832B 1N832C 1N831 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    Untitled

    Abstract: No abstract text available
    Text: MIL-S-19$ÛO/35>2 EL AMENDMENT 1 10 September 1971 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON TYPE 1N831A Page 3 Paragraph h*3«1* , T est co n d itio n s, change "P»5«0 raw” to read: "PO .i? ttw11 Custodian: Arrny-KT. Preparing a c t i v i t y :


    OCR Scan     		PDF MIL-S-1950O/35 5961-A36U

    JAN1N23WG

    Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
    Text: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED


    OCR Scan     		PDF

    1N415C

    Abstract: "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494
    Text: Point Contact Diodes MODEL NUMBER PAGE 1N 21D .7-3 1 N 2 1 E . 7-3 1N 21G . 7-3


    OCR Scan     		PDF 1N21F. 1N26C A490D A490E. A490G. A492D MA494 MA494B A494C A494D 1N415C "Point Contact Diodes" 1N23G 1N530 JAN1N23WG MA41514 MA494

    1N8284

    Abstract: 1N930B 1N8313 1N8311 1N526B 1n9303
    Text: MILITARY APPROVED 1N5283 thru Current Regulator Reid Effect Diodes 1N5314 and JAN/JTX/JTXV GEOMETRY 507 1N5283-1N5290 GEOMETRY 465 (1N529Ì-1N5314) • Available a s JAN, JANfX, JAN-TX-v thru M ax • Current Constant Over Wide Voltage Range • High Source Impedance


    OCR Scan     		PDF 1N5283 1N5314 1N5283-1N5290) 1N529 -1N5314) 1N8284 1N930B 1N8313 1N8311 1N526B 1n9303

    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features • ■ ■ High Burnout Resistance Low Noise Figure, even in the Starved L.O. Mode Hermetically Sealed * \ / \ Description These specifications allow the noise figure of the re­ ceiver to deteriorate no greater than 0.1 dB due to local


    OCR Scan     		PDF

    IN23C

    Abstract: IN23E in23we DO-37 IN416D 1N26 DO-23 1N25 diode 1N26A diode IN23WGMR
    Text: 0258354 ADVANCED ADVANCED S EMI CONDUC TOR SEMICONDUCTOR ! 82D 0 0 0 6 3 fl2 D Dff|oa5ü3S4 o n - o~r 0□0 □Ob3 4 SILICONPOINTCOMCTMIXER OIOÛES ASI Point Contact Mixer Diodes are designed for applications from UHF through 26 GHz. They feature high burnout resistance, low


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. supp26A DO-37 1N26B 1N26C IN23C IN23E in23we IN416D 1N26 1N25 diode 1N26A diode IN23WGMR

    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Features • High Burnout Resistance ■ Low Noise Figure, even in the Starved LO Mode ■ Hermetically Sealed Description Alpha’s point contact mixer diodes are designed for


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan     		PDF AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor

    MIS us army

    Abstract: ltsx 1N831A 1N831
    Text: « « -T T n 1 A F * A A f n P C% / T ’ T \ I V l l l v - ö - I V ^ U U / ¿D Z ü iL . 25 MARCH 1966 MILITARY SPECIFICATION c rr iM r r n \ m T ì p t a dI I nJ - T rA \J 7Y il Vr ii U? i T l l L i V l ^ J L / U \ j 1 V O ^ T ìT A T ìT ? J L /X V J L /U j


    OCR Scan     		PDF 1N831A MIL-S-19500 MIS us army ltsx 1N831A 1N831

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: 0585443 ALPHA IND/ SEMICONDUCTOR "El D lf| 0SÛS443 Q0DD3fiti E 03E 00386 D T -C>7 _¿> J Silicon Point Contact Mixer Diodes Features • High Burnout Resistance • Low Noise Figure, even in the Starved L.O. Mode • Hermetically Sealed The matching criteria for mixer diodes are as follows:


    OCR Scan     		PDF

    1N21

    Abstract: 1N1132 1N23 1N415 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1N3745 1n26
    Text: Silicon Point Contact Mixer and Detector Diodes Quick Reference Chart Description This selection chart identifies the standard line of Alpha microwave point contact mixer and detector di­ odes by basic construction, package style and frequency band. Type


    OCR Scan     		PDF 1N23W 1N415 DMA6498 1N3747W 1N3746 1N3745 DMA6497 DMA5223 DMA5278 DMA5253 1N21 1N1132 1N23 Microwave detector diodes 1n4603 1N416 "Point Contact Mixer" 1n26

    1N21* Diode Detector Holder

    Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C
    Text: Point Contact Mixer and Detector Diodes Features • PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description


    OCR Scan     		PDF

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for applications from UHF through 26 GHz. The overall noise figure is expressed by the follow ing relationship: NF0 = Lc NR0 + NF if -1 NF„ = overall receiver noise figure


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text: SILICONPOINTCONTACTMIXERDIODES They feature high burnout resistance, low ASI Point Contact Mixer Diodes are designed for applications from UHF through noise figure and are hermetically sealed. They are available in DO-7, DO-22, DO-23 26 GHz. and DO-37 package styles which make


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416

    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: ALPHA IN»/ SEMICONDUCTOR MAE D • 0SAS443 00011b3 447 ■ ALP Silicon Point Contact Mixer Diodes Description Alpha’s point contact mixer diodes are designed for applications through Ka-band 40 GHz . These diodes employ epitaxial silicon optimized for low noise figure


    OCR Scan     		PDF