2N3904 transistor equivalent
Abstract: MJE250 Iron Core Inductor
Text: SECTION 9 APPENDICES APPENDIX I USING THE TWO TRANSISTOR ANALYSIS Equation 3 relates IA to IG, and note that as α1 + α2 = 1, IA goes to infinity. IA can be put in terms of IK and α’s as follows: DEFINITIONS: 5 Collector current 5 Base current 5 Collector leakage current
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Transformer and Inductor Design Handbook,
Abstract: hall ic 01e 3C80 ferrite 3C80 transformer MC33262 3c80 material mbrs360 MC33072 flyback transformer high voltage copier 4n35 optocoupler
Text: AND8024/D Off-Line Critical Conduction Switching Power Supply with Voltage and Current Limiting http://onsemi.com Prepared by: Larry Hayes, Jim Spangler ON Semiconductor Phoenix, AZ 85008 APPLICATION NOTE current through the primary of the coupled inductor
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AND8024/D
r14525
Transformer and Inductor Design Handbook,
hall ic 01e
3C80 ferrite
3C80 transformer
MC33262
3c80 material
mbrs360
MC33072
flyback transformer high voltage copier
4n35 optocoupler
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1N914 SOT-23
Abstract: MMBT550LT1
Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160
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MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1
OT-23-3
1N914 SOT-23
MMBT550LT1
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Untitled
Abstract: No abstract text available
Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. http://onsemi.com
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MMBT2222AWT1
323/SC
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Untitled
Abstract: No abstract text available
Text: MMPQ2222A Preferred Device Quad General Purpose Transistor NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCEO 40 Vdc VCB 75 Vdc VEB 5.0 Vdc 500 mAdc Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous
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MMPQ2222A
SO-16
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marking 1p
Abstract: No abstract text available
Text: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–416/SC–75 package which is designed for low power surface mount applications. http://onsemi.com
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MMBT2222ATT1
416/SC
marking 1p
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2n5551
Abstract: 2N55551 2N5551 circuit 2n5550
Text: 2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code http://onsemi.com COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit
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2N5550,
2N5551
2N5550
2N5551
2N55551
2N5551 circuit
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1n914 SOT323
Abstract: No abstract text available
Text: MMBT2222AWT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−323/SC−70 package which7 is designed for low power surface mount applications. http://onsemi.com
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MMBT2222AWT1
OT-323/SC-70
SC-70
1n914 SOT323
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GD103
Abstract: 4752F 1N914 diode free max5776 power transformer PAYTON 125 mosfet 9452
Text: NCP1560 Advance Information Full Featured Voltage Mode PWM Controller The NCP1560 PWM controller contains all of the features and flexibility needed to implement voltage–mode control for modern high performance power converters. This device cost effectively
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NCP1560
r14525
NCP1560/D
GD103
4752F
1N914 diode free
max5776
power transformer PAYTON 125
mosfet 9452
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MARKING 318 SC70-6
Abstract: No abstract text available
Text: MBT2222ADW1T1 General Purpose Transistor NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating: Human Body Model − 4 kV http://onsemi.com Machine Model − 400 V MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc
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MBT2222ADW1T1
SC-88/SC70-6/SOT-363
MBT2222ADW1T1
MARKING 318 SC70-6
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Untitled
Abstract: No abstract text available
Text: MMBT2222ATT1 Preferred Device General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 package which is designed for low power surface mount applications. http://onsemi.com
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MMBT2222ATT1
OT-416/SC-75
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TRIAC MAC8N
Abstract: No abstract text available
Text: MAC8D, MAC8M, MAC8N Preferred Device Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • •
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O-220AB
1N4007
1N914
AN1048
TRIAC MAC8N
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MMBT2222ALT1
Abstract: No abstract text available
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
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mps 222A
Abstract: mps2222 equivalent mps2222a mps2222 222A MPS2 Transistors MPS2222A MPS2
Text: MPS2222, MPS2222A MPS2222A is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage VCEO MPS2222 MPS2222A Collector −Base Voltage Value 30 40 MPS2222 MPS2222A 1
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MPS2222,
MPS2222A
MPS2222A
MPS2222
mps 222A
mps2222 equivalent
222A MPS2
Transistors MPS2222A
MPS2
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1N914
Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160
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MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1
MMBT5550LT1/D
1N914
MMBT5550
MMBT5550LT1
MMBT5551
MMBT5551LT1G
MMBT5551LT3
5551 SOT-23
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4DHM
Abstract: Q1 Q2 Q3 Q4 DPAK AC4DHM
Text: MAC4DHM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features
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1N4007
1N914
AN1048
4DHM
Q1 Q2 Q3 Q4 DPAK
AC4DHM
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4dlm
Abstract: ac 4dlm
Text: MAC4DLM Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. http://onsemi.com Features
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1N4007
1N914
AN1048
4dlm
ac 4dlm
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2N5401
Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1
Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
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2N5401
2N5400
2N5401/D
2N5401
2N54XX
transistor 2N5401
1N914
2N5401RL1
2N5401RLRA
2N5401RLRAG
2N5401RLRM
2N5401ZL1
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Untitled
Abstract: No abstract text available
Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160
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MMBT5550LT1,
MMBT5551LT1
MMBT5551LT1
MMBT5550LT1/D
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843 SOT-23
Abstract: MMBT2222ALT1G
Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating
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MMBT2222LT1,
MMBT2222ALT1
MMBT2222ALT1
MMBT2222LT1
843 SOT-23
MMBT2222ALT1G
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MMBT5401LT1G
Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
Text: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc
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MMBT5401LT1
MMBT5401LT1/D
MMBT5401LT1G
1N914
MMBT5401LT1
MMBT5401LT3
MMBT5401LT3G
sot-23-3 marking code PO
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MMBT5401LT1G
Abstract: 1N914 MMBT5401LT3G
Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage
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MMBT5401LT1G
MMBT5401LT1/D
MMBT5401LT1G
1N914
MMBT5401LT3G
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2N540
Abstract: 2N5401G 1N914 2N5401 2N5401RLRAG 2n5401-g
Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage VCEO 150 Vdc Collector − Base Voltage VCBO 160 Vdc Emitter − Base Voltage
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2N5401
2N5401/D
2N540
2N5401G
1N914
2N5401
2N5401RLRAG
2n5401-g
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1N914
Abstract: MMBT5401LT1G MMBT5401LT3G
Text: MMBT5401LT1G High Voltage Transistor PNP Silicon Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage
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MMBT5401LT1G
MMBT5401LT1/D
1N914
MMBT5401LT1G
MMBT5401LT3G
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