1P K TRANSISTOR Search Results

1P K TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1P K TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Datasheet, V1.2, 06 Feb 2007 CCM-PFC ICE1PCS02 I CE 1P CS 02G Standalone Power Factor Correction PFC Controller in Continuous Conduction Mode (CCM) with Input Brown-Out Protection P owe r M a n a g e m e n t & S u p p l y N e v e r s t o p t h i n k i n g .	Original	ICE1PCS02	PDF
Untitled Abstract: No abstract text available Text: Datasheet, V1.3, 06 Feb 2007 CCM-PFC ICE1PCS01 I CE 1P CS 01G Standalone Power Factor Correction PFC Controller in Continuous Conduction Mode (CCM) P owe r M a n a g e m e n t & S u p p l y N e v e r s t o p t h i n k i n g . CCM-PFC Revision History: 2007-02-06	Original	ICE1PCS01	PDF
LMBT2222ATT1G Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G S-LMBT2222ATT1G These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.	Original	LMBT2222ATT1G S-LMBT2222ATT1G SC-89 AEC-Q101 LMBT2222ATT3G S-LMBT2222ATT3G 463C-02. LMBT2222ATT1G	PDF
TRANSISTOR 1P Abstract: TRANSISTOR code marking 1P 3 marking code 1P SC-89 1P surface mount transistor Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1G 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications.	Original	LMBT2222ATT1G SC-89 SC-89 LMBT2222ATT3G 463C-01 463C-02. TRANSISTOR 1P TRANSISTOR code marking 1P 3 marking code 1P 1P surface mount transistor	PDF
transistor k72 Abstract: No abstract text available Text: NEW PRODUCT 2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage	Original	2N7002DW OT-363 OT-363, MIL-STD-202, 500mA DS30120 transistor k72	PDF
m1b marking Abstract: MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Unit VCEO MMBT2222LT1	Original	MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D m1b marking MMBT2222ALT1G 1N914 MMBT2222 MMBT2222A MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G	PDF
MMBT2222ALT1G Abstract: 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1	Original	MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 MMBT2222LT1/D MMBT2222ALT1G 1P SOT-23 1N914 MMBT2222 MMBT2222A MMBT2222LT1 MMBT2222LT1G MMBT2222LT3 MMBT2222LT3G	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistor NPN Silicon LMBT2222ATT1 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC−89 package which is designed for low power surface mount applications. 1	Original	LMBT2222ATT1 SC-89 LMBT2222ATT3	PDF
M1B marking Abstract: 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon Features •ăPb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collectorā-āEmitter Voltage Unit VCEO MMBT2222LT1 MMBT2222ALT1 Collectorā-āBase Voltage	Original	MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 M1B marking 1N914 SOT-23 MMBT2222A 1n914 sot marking 1p sot23 1P SOT-23 marking code m1b MMBT2222ALT1G 1p sot MMBT2222LT3G	PDF
DUAL NPN K1P Abstract: marking 1P sot363 Text: PRELIMINARY MMDT2222A DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available MMDT2907A Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data	Original	MMDT2222A MMDT2907A) OT-363 OT-363, MIL-STD-202, 100MHz 150mA, DS30125 DUAL NPN K1P marking 1P sot363	PDF
MMDT2907A Abstract: No abstract text available Text: PRELIMINARY MMDT2907A DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data	Original	MMDT2907A OT-363 OT-363, MIL-STD-202, -150mA, -15mA -500mA, -50mA 150mA, 500mA, MMDT2907A	PDF
marking K3N Abstract: No abstract text available Text: PRELIMINARY MMDT3906 DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX Mechanical Data	Original	MMDT3906 OT-363 OT-363, MIL-STD-202, -10mA, -50mA, 100MHz marking K3N	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY MMDT4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR POWER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 A C2 B1 E1 KXX B C Mechanical Data	Original	MMDT4401 OT-363 OT-363, MIL-STD-202, 150mA, 500mA, 100MHz	PDF
CM603 Abstract: No abstract text available Text: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1\|,& . (1p}\| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode	OCR Scan		PDF

2N7002W Abstract: transistor marking 1p Text: 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR /UTEMir powefsehconwjctor/ I Features Low On-Res¡stance: 2.5Q Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package	OCR Scan	2N7002W OT-323 OT-323, MIL-STD-202, 300ns, DS30099 2N7002W transistor marking 1p	PDF
transistor marking 1p Z Abstract: 2N7002W Text: PRELIMINARY 2N7002W VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Low On-Resistance: 2 .5 Q. Low Threshold: 2.1V Low Input Capacitance: 22pF Fast Switching Speed: 7.0ns Low Input/Output Leakage Ultra-Small Surface Mount Package	OCR Scan	2N7002W OT-323, MIL-STD-202, OT-323 DS30099 2N7002W transistor marking 1p Z	PDF
2SC741 Abstract: transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor Text: MITSUBISHI RF POWER TRANSISTOR 2SC741 NPN E P IT A X IA L PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2SC741 is a silicon NPN epitaxial planar type transistor designed fo r industrial use RF power amplifiers on VHF band mobile radio applications. Dimensions in mm	OCR Scan	2SC741 Gpeii13dB 150MHz 2SC741 transistor 1p 1p TRANSISTOR ZM50 TG-25 1P H transistor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by m t d f i p o 2 h d / d SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T D F 1P 02H D Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual P-Channel Field Effect Transistor Micro8™ devices are an advanced series of power MOSFETs	OCR Scan	TDF1P02HD/D	PDF
Untitled Abstract: No abstract text available Text: M ITSUBISHI RF POW ER TRAN SISTO R 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE D RAW IN G D im ensions in mm 2 S C 3 4 0 4 is a silicon NPN epitaxial planar type transistor specifi cally designed for V H F power amplifier applications. FEATU RES	OCR Scan	2SC3404	PDF
package drawing T46 Abstract: 2SC3404 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw Text: MITSUBISHI RF POWER TRANSISTOR 2SC3404 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 3404 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. C 1 .5 M A X D im e n s io n s in m m	OCR Scan	2SC3404 2SC3404 75MHz, 175MHz, package drawing T46 1p TRANSISTOR RF POWER TRANSISTOR NPN vhf Mitsubishi databook T-46 npn transistor 80mw	PDF
MMST3904 Abstract: MMST4401 MMST4403 Text: PRELIM INARY MMST4401 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POW ER SEMICONDUCTOR Features • • • Epitaxial Planar Die Construction Complementary PNP Type Available M M S T4403 Ultra-Small Surface Mount Package SOT-323 -H h-A TB	OCR Scan	MMST4401 MMST4403) OT-323, MIL-STD-202, OT-323 MMST30 100MHz 150mA, 300tis, MMST3904 MMST4401 MMST4403	PDF
K2F transistor Abstract: pnp k2f MMDT2907A Text: PRELIMINARY MMDT2907A VISHAY /l i t e w ji DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 Dim A "Ha K	OCR Scan	MMDT2907A OT-363, MIL-STD-202, OT-363 MMDT2907A -50mA, 100MHz -150mA, -15mA K2F transistor pnp k2f	PDF
K6N sot363 marking Abstract: 1P NPN MMDT3904 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527 Text: PRELIM INARY MMDT3904 VISHAY DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Ì LITEM ZI POWER SEMICONDUCTOR Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 R Ei R k Mechanical Data_	OCR Scan	MMDT3904 OT-363, MIL-STD-202, OT-363 MMDT3904 100MHz 100nA, 300tis, DS30088 K6N sot363 marking 1P NPN 1P surface mount transistor TRANSISTOR marking k2 dual 33ro Scans-0026527	PDF
marking WMP Abstract: 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P MMDT4401 Text: PRELIMINARY MMDT4401 VISHAY NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR /l i t e w j i I POWER SEMICONDUCTOR/ Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching Ultra-Small Surface Mount Package SOT-363 -HaH- R N E,	OCR Scan	MMDT4401 OT-363, MIL-STD-202, OT-363 MMDT4401 100MHz 150mA, 300ns, DS30111 marking WMP 1P NPN NPN SMALL SIGNAL TRANSISTOR TRANSISTOR MARKING TE SOT363 marking 1p transistor TRANSISTOR 1P	PDF

1P K TRANSISTOR Search Results

1P K TRANSISTOR Result Highlights (5)

1P K TRANSISTOR Datasheets Context Search

Untitled

Untitled

LMBT2222ATT1G

TRANSISTOR 1P

transistor k72

m1b marking

MMBT2222ALT1G

Untitled

M1B marking

DUAL NPN K1P

MMDT2907A

marking K3N

Untitled

CM603

2N7002W

transistor marking 1p Z

2SC741

Untitled

Untitled

package drawing T46

MMST3904

K2F transistor

K6N sot363 marking

marking WMP