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    1P NPN Search Results

    1P NPN Result Highlights (5)

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    CA3046 Rochester Electronics LLC CA3046 - General Purpose NPN Transistor Array Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - General Purpose High Current NPN Transistor Array Visit Rochester Electronics LLC Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
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    1P NPN Price and Stock

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    Bulgin PXPNPN12RAF04AFI010PUR

    Sensor Cables / Actuator Cables M12 A-coding 4 Pins Male Straight t
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    Mouser Electronics PXPNPN12RAF04AFI010PUR
    • 1 -
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    • 100 $31.42
    • 1000 $31.42
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    Glenair Inc 947-008M24-61PNPN

    Circular MIL Spec Connector CONNECTING DEVICES - SAV-CON CONNECTORS
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    Mouser Electronics 947-008M24-61PNPN
    • 1 -
    • 10 $2671.29
    • 100 $2671.29
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    Newark 947-008M24-61PNPN Bulk 1 1
    • 1 $5933.59
    • 10 $2704.32
    • 100 $1590.78
    • 1000 $1590.78
    • 10000 $1590.78
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    Glenair Inc 947-139M25-61PNPN

    Circular MIL Spec Connector CONNECTING DEVICES - SAV-CON CONNECTORS
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    Mouser Electronics 947-139M25-61PNPN
    • 1 -
    • 10 $3203.39
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    Newark 947-139M25-61PNPN Bulk 5 1
    • 1 $7115.52
    • 10 $3243
    • 100 $1907.65
    • 1000 $1907.65
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    Sifam Tinsley Precision Instrumentation Ltd MCS 103-071-PNPN

    Swithcboard Panel Meter Model 007 Range And Scale 110-130Vac Expanded Scale Rohs Compliant: Yes |Sifam Tinsley MCS 103-071-PNPN
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    Newark MCS 103-071-PNPN Bulk 1 1
    • 1 $250
    • 10 $250
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    Sifam Tinsley Precision Instrumentation Ltd PK 103 071 PNPN

    MCS Analog Switchboard Panel Meter, AC Voltmeter, 110-130V, Transformer-Rated | Sifam Tinsley PK 103 071 PNPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PK 103 071 PNPN Bulk 4 Weeks 1
    • 1 $306
    • 10 $290.7
    • 100 $275.4
    • 1000 $275.4
    • 10000 $275.4
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    1P NPN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: S E V IC C3MDUCTtZSR FM B2222A FFB2222A M M PQ2222A E2 C2 SC70-6 Mark: .1P Mark: .1P NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.


    OCR Scan     		B2222A FFB2222A PQ2222A SC70-6 FFB2222A FMB2222A MMPQ2222A PDF

    FB222

    Abstract: SOIC1
    Text: éùxim jéM w . « $ * # Discrete POW ER & Signal _ _ Technologies i ùiOiài FMB2222A / FMB2222A FFB2222A FFB2222A man:- m k. MMPQ2222A E2 C1 / MMPQ2222A C2 B1 pin#1 E1 pin#1 B1 SC70-6 SuperSOT -6 M a rk : .1P M a rk : .1P SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier


    OCR Scan     		FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16 FB222 SOIC1 PDF

    1P NPN

    Abstract: FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16
    Text: Is S'-^iC T Z3 NSCJLJC: * "T»»? FMB2222A MMPQ2222A C2 E1 C1 E1 pin#1 p-E2 B1 B2 % SC70-6 SuperSOT -6 Mark: .1P Mark: .1P / MMPQ2222A pin#1 • C1 SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power am plifier and switch requiring collector


    OCR Scan     		FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16 200ns 1P NPN MMPQ2222A SC70-6 PDF

    FFB2222A

    Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
    Text: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector


    Original     		FMB2222A FFB2222A MMPQ2222A SC70-6 SOIC-16 FFB2222A FMB2222A 200ns MMPQ2222A SC70-6 SOIC-16 C150F PDF

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz PDF

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P PDF

    marking 1p sot23

    Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
    Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p PDF

    DS199

    Abstract: No abstract text available
    Text: FMMT2222 FMMT2222A S0T23 NPN SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS: FMMT2222 - 1B FMMT2222A - 1P FMMT2222R - 2P FMMT2222AR - 3P ABSOLUTE MAXIMUM RATINGS SY M B O L PAR AM ETER Collector-Base Voltage Collector-Em itter Voltage Emitter-Base Voltage


    OCR Scan     		S0T23 FMMT2222 FMMT2222A FMMT2222R FMMT2222AR FMMT2222 FMMT2222A 140KHz DS199 PDF

    kst2222a

    Abstract: No abstract text available
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		KST2222A OT-23 KST2222A PDF

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225 PDF

    KST2222A

    Abstract: transistor kst2222a
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		KST2222A OT-23 KST2222A transistor kst2222a PDF

    1P NPN

    Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC PDF

    PT 1300 phototransistor

    Abstract: No abstract text available
    Text: Technical Data Sheet Opto Interrupter ITR8010 █ Features ․Fast response time ․High analytic ․Cut-off visible wavelength 1p=940nm ․High sensitivity ․Pb free ․This product itself will remain within RoHS compliant version █ Descriptions ․The ITR8010 consist of an infrared emitting diode and an NPN silicon phototransistor,


    Original     		ITR8010 940nm ITR8010 CDRX-810-010 PT 1300 phototransistor PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R . PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1p to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS


    OCR Scan     		PN930 2N5088 PDF

    Untitled

    Abstract: No abstract text available
    Text: S E M IC O N D U C T O R PN2484 MMBT2484 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1p to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.


    OCR Scan     		PN2484 MMBT2484 2N5088 PN2484 PDF

    602 SOT

    Abstract: MMBT2222A
    Text: 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818) 701-4939 MMBT2222A Features • • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Purpose Amplifier C Pin Configuration Top View 1P B E Electrical Characteristics @ 25°C Unless Otherwise Specified


    Original     		MMBT2222A OT-23 350mWatts OT-23 10mAdc, 60Vdc, IC/10 602 SOT MMBT2222A PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A / PZT2222A NPN General-Purpose Amplifier Features • This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. • Sourced from process 19. C C E E SOT-23 Mark:1P C SOT-223 B Figure 1. MMBT2222A Device Package


    Original     		MMBT2222A PZT2222A 500mA. OT-23 OT-223 PZT2222A MMBT2222A OT-23 PDF

    PN2222A

    Abstract: 339 SOT23-3 bf255
    Text: PN2222A / MMBT2222A / PZT2222A PN2222A MMBT2222A PZT2222A C C E C B TO-92 B SOT-23 E B SOT-223 Mark: 1P E C NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19.


    Original     		PN2222A MMBT2222A PZT2222A PN2222A MMBT2222A OT-23 OT-223 339 SOT23-3 bf255 PDF