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    1P SOT Search Results

    1P SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
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    1P SOT Price and Stock

    PanJit Semiconductor PJSOT24C-03_R1_00001

    ESD Protection Diodes / TVS Diodes 24V,ESD Protection,SOT-23,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PJSOT24C-03_R1_00001 2,975
    • 1 $0.49
    • 10 $0.345
    • 100 $0.174
    • 1000 $0.123
    • 10000 $0.092
    		Buy Now

    PanJit Semiconductor PJSOT36_R1_00001

    ESD Suppressors / TVS Diodes 36V,ESD Protection,SOT-23,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PJSOT36_R1_00001
    • 1 $0.44
    • 10 $0.277
    • 100 $0.132
    • 1000 $0.112
    • 10000 $0.076
    		Get Quote

    PanJit Semiconductor PJSOT05C-03_R1_00001

    ESD Suppressors / TVS Diodes 5V,ESD Protection,SOT-23,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PJSOT05C-03_R1_00001
    • 1 $0.42
    • 10 $0.289
    • 100 $0.178
    • 1000 $0.118
    • 10000 $0.081
    		Get Quote

    PanJit Semiconductor PJSOT05_R1_00001

    ESD Suppressors / TVS Diodes 5V,ESD Protection,SOT-23,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PJSOT05_R1_00001
    • 1 $0.45
    • 10 $0.307
    • 100 $0.191
    • 1000 $0.125
    • 10000 $0.085
    		Get Quote

    PanJit Semiconductor PJSOT05CW_R1_00001

    ESD Suppressors / TVS Diodes 5V,ESD Protection,SOT-323,UNI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics PJSOT05CW_R1_00001
    • 1 $0.5
    • 10 $0.342
    • 100 $0.212
    • 1000 $0.139
    • 10000 $0.081
    		Get Quote
    Find more 1P SOT price and stock on Findchips.com

    1P SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FFB2222A

    Abstract: FMB2222A MMPQ2222A SC70-6 SOIC-16 C150F
    Text: FMB2222A FFB2222A E2 MMPQ2222A C2 B2 E1 C1 C1 E1 C2 B1 B2 E3 E4 B4 B2 B1 pin #1 E2 B3 E2 E1 pin #1 B1 SC70-6 SuperSOT-6 Mark: .1P Mark: .1P C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector


    Original     		PDF FMB2222A FFB2222A MMPQ2222A SC70-6 SOIC-16 FFB2222A FMB2222A 200ns MMPQ2222A SC70-6 SOIC-16 C150F

    MARKING 1P

    Abstract: MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz MARKING 1P MMBT2222A MMBT2907A 1p sot23 TRANSISTOR 1P SOT23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222ALT1 TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222ALT1 OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors MMBT2222A TRANSISTOR NPN SOT-23 FEATURES z Epitaxial planar die construction z Complementary PNP Type available(MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P


    Original     		PDF OT-23 MMBT2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz

    Transistor hFE CLASSIFICATION Marking CE

    Abstract: marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P
    Text: MMBT2222A TRANSISTOR NPN PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors SOT-23 FEATURES Epitaxial planar die construction Complementary PNP Type available (MMBT2907A) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P MECHANCIAL DATA NA Pb-free; RoHS-compliant


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to Transistor hFE CLASSIFICATION Marking CE marking 1P sot-23 Application of MMBT2907A sot-23 1P F MMBT2222A MMBT2907A MARKING 1P

    marking 1p sot23

    Abstract: TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p
    Text: MMBT2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features — Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) — MARKING: 1P Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF MMBT2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA marking 1p sot23 TRANSISTOR 1P SOT23 1p transistor sot23 1p transistor sot-23 1P F marking 1p transistor sot23 TRANSISTOR 1P Marking 1P 1P sot23 sot23 1p

    Untitled

    Abstract: No abstract text available
    Text: FMBT2222A NPN Bipolar Transistor Mechanical Dimensions FMBT2222A Description 1. BASE 2.EMITTER 3.COLLECTOR SOT-23 Dimension in mm FEATURES y Epitaxial planar die construction y Complementary PNP Type available FMMBT2907A MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted


    Original     		PDF FMBT2222A FMBT2222A OT-23 FMMBT2907A) -55to V50mA 500mA 100MHz 150mA

    BAW56

    Abstract: BAV99
    Text: BAW56 Discrete POWER & Signal Technologies N BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 1 SOT-23 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BAW56 OT-23 BAV99 BAW56

    MMBD7000

    Abstract: SOT23 JEDEC standard orientation pad size
    Text: MMBD7000 MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 70 V


    Original     		PDF MMBD7000 OT-23 MMBD1201-1205 MMBD7000 SOT23 JEDEC standard orientation pad size

    MMBD914

    Abstract: No abstract text available
    Text: MMBD914 Discrete POWER & Signal Technologies N MMBD914 CONNECTION DIAGRAM 3 3 3 5D 2 SOT-23 1 2 2 NC 1 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units 75


    Original     		PDF MMBD914 OT-23 MMBD914

    MMBD7000

    Abstract: Ultra fast diode
    Text: MMBD7000 Discrete POWER & Signal Technologies N MMBD7000 CONNECTION DIAGRAM 3 3 3 5C 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV


    Original     		PDF MMBD7000 OT-23 MMBD7000 Ultra fast diode

    UTC 225

    Abstract: No abstract text available
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		PDF MMBT2222A 500mA. OT-23 QW-R206-019 UTC 225

    BAV70

    Abstract: BAV74 BAV99 fairchild sot-23 bav70 FAIRCHILD DIODE
    Text: BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 2 MARKING A4 BAV74 BAV70 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value


    Original     		PDF BAV70 OT-23 BAV74 BAV70 BAV99 BAV70oduct BAV74 fairchild sot-23 bav70 FAIRCHILD DIODE

    BAV99

    Abstract: BAW56 Fairchild BAW56 SOT-23 bav99 code
    Text: BAW56 BAW56 CONNECTION DIAGRAMS 3 3 3 A1 2 SOT-23 1 2 1 2 1 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage


    Original     		PDF BAW56 OT-23 BAV99 BAW56 Fairchild BAW56 SOT-23 bav99 code

    KST2222A

    Abstract: transistor kst2222a
    Text: KST2222A tm NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1P 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage Parameter 75 V VCEO Collector-Emitter Voltage


    Original     		PDF KST2222A OT-23 KST2222A transistor kst2222a

    1P NPN

    Abstract: MMBT2222A 1P SOT-23 MMBT2222A UTC
    Text: UTC MMBT2222A NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES *This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. Sourced from Process 19. 2 1 MARKING 3 1P SOT-23 1:EMITTER 2:BASE


    Original     		PDF MMBT2222A 500mA. OT-23 QW-R206-019 1P NPN MMBT2222A 1P SOT-23 MMBT2222A UTC

    fairchild sot-23 bav70

    Abstract: sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV70 BAV74 BAV99 sot-23 MARKING CODE A4
    Text: BAV70 / BAV74 BAV70 / 74 3 CONNECTION DIAGRAMS A4 3 1 2 SOT-23 3 1 BAV70 2 MARKING A4 BAV74 1 JA 2 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF BAV70 BAV74 OT-23 BAV70 BAV99 fairchild sot-23 bav70 sot-23 body marking A4 MARKING W2 SOT23 BAV70 ON marking code w2 sot23 fairchild s sot-23 Device Marking BAV74 sot-23 MARKING CODE A4

    E200765

    Abstract: style 20276 hdmi. cable HDMI cable CONNECTOR HIGH SPEED HDMI Connector HDMI hdmi 20276 STYLE 20276 hdmi
    Text: 171 L ± 3% y / 19 CN1 MATERIAL LIST: 1 NO. PARTS NAME SPECIFICATION DESCRIPTIO N UL20276 30AWC* 1P+AL+D+MYLA *4+30AWG* 1P+30AWG*5C CABLE <2> HOMI CONNECTOR ÏÏ w ~ OUT CN2 CN1 RED 1 0 7T W— 12.-M _ WHITE 2 ^ 1 1 ii D R A IN D R A IN ^ 2 +AL+D+B(AL 60%) 0 0 :6 .0 ± 0 .2 m m COLOR:BLACK


    OCR Scan     		PDF UL20276 E200765 19-SHELb- 2000i50nnn style 20276 hdmi. cable HDMI cable CONNECTOR HIGH SPEED HDMI Connector HDMI hdmi 20276 STYLE 20276 hdmi

    BAV99 SOT 23

    Abstract: BAV99 UU120
    Text: BAV99 9 D iscrete POWER & S ign al Technologies National Semiconductor" BAV99 CONNECTION DIAGRAM 1H SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value Units


    OCR Scan     		PDF BAV99 OT-23 BAV99 SOT 23 BAV99 UU120

    Untitled

    Abstract: No abstract text available
    Text: S iM IC3QMPUCTQ R BAW56 CONNECTION DIAGRAMS SOT-23 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings4 Symbol T A = 2 5°C unless o th e rw ise noted Parameter Value Units W IV Working Inverse Voltage


    OCR Scan     		PDF BAW56 OT-23 BAV99