1RL640A Search Results

R/1RL640A

Abstract: No abstract text available
Text: IRL640A A d van ced Power MOSFET FEATURES BV,DSS = 200 V • ■ ■ ■ ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA Max. @ VOS= 200V