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    1S1553 Search Results

    1S1553 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1S1553 Changzhou Galaxy Electrical Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 70V, DO-35, 2-Pin Original PDF
    1S1553 Leshan Radio Company SWITCHING DIODES Original PDF
    1S1553 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    1S1553 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S1553 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1S1553 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1S1553 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1S1553 Panasonic Silicon epitaxial planar type diode. Scan PDF
    1S1553 Toshiba Integrated Circuits for TV Systems Scan PDF

    1S1553 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1S1555

    Abstract: 1S1553 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555 1SS133 1N4148 1SS176
    Text: LESHAN RADIO COMPANY, LTD. 1N4148 1S SERIES 1SS SERIES SWITCHING DIODES 1. SWITCHING DIODES ABSOLUTE MAXIMUM RATINGS TYPE V RM V 1N4148 100 1S1553 70 1S1555 35 1SS133 90 1SS176 35 1SS270 30 V R (V) IF(mA) IO(mA) I FS(mA)1 Sec P(mw) 75 60 30 80 30 30 450 300


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    PDF 1N4148 1N4148 1S1553 1S1555 1SS133 1SS176 1SS270 DO-35 DO-34 1s1555 diode 1SS110 1N4148V 1SS265 1S1553/1S1555

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Switching diode 1S1553 . 500mW DO-35 . Glass silicon switching diodes We declare that the material of product compliance with RoHS requirements. Product Characteristic Absolute Maximum Ratings Ta=25°C Symbol Value Unit Reverse Voltage


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    PDF 1S1553 500mW DO-35 5000pcs/each 260mm 500pcs/bag

    diode cross reference 1s1555

    Abstract: diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153
    Text: 2000.8 CROSS REFERENCE •スイッチングダイオード Switching diodes Maker Package Code DO-35 TOSHIBA 1S1555, 1S1588 1SS104 1S1553, 1S1554 MHD LLD NEC 1S953 MATSUSHITA MA150 MA161 1S1586, 1S1587 1S954, 1S955 1SS176 1SS202 1SS178, 1SS177 1SS202 1 DLS1585,


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    PDF DO-35 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S953 MA161 1S1586, 1S1587 diode cross reference 1s1555 diode cross reference 1s2473 IPS302 1SS211 1S2473 DIODE equivalent 1S2473 DIODE toshiba diode do-41 1s1555 diode 1ss202 1SS153

    1s1555 diode

    Abstract: 1S1555
    Text: 1S1553-1s1555 Small Signal Switching Diodes DO - 35 GLASS Features Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 Mechanical Data Case: DO-35, glass case Dimensions in millimeters Polarity: Color band denotes cathode


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    PDF 1S1553-1s1555 DO-34 DO-35, 1S1553 1S1555 1s1555 diode 1S1555

    1S1553/1S1555

    Abstract: 1s1553
    Text: SIYU R 1S1553/1S1555 DO-35 Glass 普通开关二极管 General Switching Diodes max. 0.52 特征 Features ・反向漏电流小。Low reverse leakage ・开关速度快。Fast switching speed min. 27.5 ・最大功率耗散500mW。Maximum power dissipation 500mW


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    PDF 1S1553/1S1555 DO-35 500mWã 500mW DO-35 1S1553/1S1555 1s1553

    1S1555

    Abstract: SIYU 052 1S1553 1S1553/1S1555
    Text: SIYU R 1S1553/1S1555 DO-35 Glass 普通开关二极管 General Switching Diodes max. 0.52 特征 Features •反向漏电流小。Low reverse leakage ·开关速度快。Fast switching speed min. 27.5 ·最大功率耗散500mW。Maximum power dissipation 500mW


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    PDF 1S1553/1S1555 DO-35 500mWMaximum 500mW DO-35 1S1555 1S1553 1S1555 SIYU 052 1S1553 1S1553/1S1555

    1s1555 diode

    Abstract: silicon diode 1S1555 SWITCHING DIODE 1s1555 1S1555 10 35 DIODE 1S1553 band switching diode
    Text: BL GALAXY ELECTRICAL 1S1553 - 1S1555 SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode


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    PDF 1S1553 1S1555 DO-34 DO-35, 1S1553 1s1555 diode silicon diode 1S1555 SWITCHING DIODE 1s1555 1S1555 10 35 DIODE band switching diode

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    1SS131

    Abstract: 1S1555 1s1555 diode 1SS130 10 35 DIODE 1SS132 1SS134 1S1553 1SS133 1SS141
    Text: BL GALAXY ELECTRICAL 1S-SERIES SMALL SIGNAL SWITCHING DIODE DO - 35 GLASS FEATURES Silicon epitaxial planar diode High speed switching diode These diodes are also available in glass case DO-34 MECHANICAL DATA Case: DO-35, glass case Polarity: Color band denotes cathode


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    PDF DO-34 DO-35, 1S1553 1S1555 1SS130 1SS132 1SS133 1SS134 1SS141 1SS144 1SS131 1S1555 1s1555 diode 1SS130 10 35 DIODE 1SS132 1SS134 1S1553 1SS133 1SS141

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    tbf819

    Abstract: mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A
    Text: 保守品種一覧表 [9] [ 9 ] 保守品種一覧表 次の品種が保守品種となっております。新規採用は代替品種にてご検討くださいますようお願い申し上 げます。 保守品種 1 形 名 代替品種 形 名 代替品種


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    PDF 04AZ3 02CZ3 1SV186 1SV245 2SC2391 05AZ3 1SV204 1SV216 2SC2483 tbf819 mg50g2cl4 MG30T1AL1 GT60J101 2SD1678 ths102a MG60M1AL1 MG150N2CK1 YTF541 THS106A

    mg75n2ys40

    Abstract: 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A
    Text: 小信号ダイオード SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 YTF842 2SK2387 YTF441 2SK2149 YTF613 2SK2381 YTF843 YTF442 mg75n2ys40 2N3055 TOSHIBA mg150n2ys40 TLR103 TOSHIBA 2N3055 MG15N6ES42 2SK150A TOSHIBA MG150N2YS40 2sk270a S2530A

    1S2473 equivalent

    Abstract: 1S2473 1S2471 1S1555 2CK80-2CK85 1S2471 equivalent DO-35 ic vrm 2CK70 1N4149-1N4154
    Text: 9.高速开关二极管 序号 型号 IC VRM Trr mA V ns 4 外形 1 1N4148 150 100V 2 1N4149-1N4154 150 35-100V 2-4 DO-35 3 1N4446-1N4454 150 40-100V 1-4 DO-35 4 1N914 75


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    PDF 1N4148 1N4149-1N4154 5-100V DO-35 1N4446-1N4454 0-100V 1N914 BAV17-BAV21 5-250V 1S2473 equivalent 1S2473 1S2471 1S1555 2CK80-2CK85 1S2471 equivalent DO-35 ic vrm 2CK70 1N4149-1N4154

    is1555

    Abstract: silicon diode 151555 IS1553 1S1555 1s1555 diode silicon diode 1S1555 1S1553-1S1555 1S1553 MARKING toshiba 133 1S1554
    Text: TOSHIBA b7 {DISCRETE/OPTO} 9097250 TOSHIBA DE-! TO^ESO OOCHEn? 3 | D I S C R E T E / O P T O _ ^ 67C 09297 D. / - Silicon Epitaxial "Planar Type 1S15531S1555 Diode Unit in min GENERAL PURPOSE APPLICATION FOR DETECTOR AND RECTIFIER. FEATURES :


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    PDF 1S1553-1S1555 1S1553 1S1554 1S1555 DO-35 SC-40 100mA is1555 silicon diode 151555 IS1553 1S1555 1s1555 diode silicon diode 1S1555 1S1553-1S1555 1S1553 MARKING toshiba 133

    FC54M

    Abstract: FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"
    Text: CROSS • — K - f -y _ REFERENCE S w itc h in g d io d e s Marker TOSHIBA NEC MATSUSHITA ROHM PMUPS HITACHI Factage 1SS172 1SS267 DO-41 1S1555, 1S1588 MA150 1S953 1S2472, 1S2473 1S2076 1S2787 1SS104 MA161 1S1553, 1S1554 1S2471,1SS41 1S2076A 1S2092, 1S2460


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    PDF DO-41 1SS267 1S1555, 1S1588 1SS104 1S1553, 1S1554 1S2092, 1S2460 1S2461, FC54M FC53M diode cross reference 1s1555 diode cross reference 1s2473 RLS135 "cross reference" 1SS1586 1SS211 sanken SE014 1SS2021 toshiba diode "do-41"

    in750 diode

    Abstract: 1N9148 IN750 1s1555 diode izk 1n758 zener 1n750 1S1555 in750 zener diode 1N751 izk 1N4150
    Text: DO-35 4 = NOTÉS: 1. CATHODÉ IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - B 3,03 4,44 C D 0,46 0,56 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified Type


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    PDF DO-35 DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4448 1N4531 in750 diode 1N9148 IN750 1s1555 diode izk 1n758 zener 1n750 1S1555 in750 zener diode 1N751 izk

    1S1555

    Abstract: 1S15555 1S1553/1S1555
    Text: DO-35 B o_C DIM A B C D HD: MIN 25.40 3.03 0.46 1,52 MAX — 4.44 0,56 2.20 NOTES:1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, U n less Otherw ise Specified at V R Type


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    PDF DO-35 DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4448 1N4531 1S1555 1S15555 1S1553/1S1555

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    1N9148

    Abstract: 1n9145 1S1555 1s1555 diode 1N4148 1N4150 1N4151 1N4448 1N4531 1N914
    Text: DO-35 °r NOTES: 1. CATHODE IS MARKED BY BAND 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - 4,44 B 3,03 C 0,46 0,56 D 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW Electrical Characteristics (At Ta=25°C, Unless Otherwise Specified Type


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    PDF DO-35 DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4448 1N4531 1N9148 1n9145 1S1555 1s1555 diode

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    Untitled

    Abstract: No abstract text available
    Text: DO-35 4 = NOTES: 1. CATHODE is m a r k e d b y b a n d 2. ALL DIMENSIONS ARE IN M.M. DIM MIN MAX A 25,40 - B 3,03 4,44 C 0,46 0,56 D 1,52 2,29 DIODES AMMO PACK DO-35 Switching Diodes 500 mW E lectrical C haracteristics (At Ta=25°C, Unless O therwise Specified


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    PDF DO-35 DO-35 1N914 1N914A 1N914B 1N4148 1N4150 1N4151 1N4448 1N753