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    Toshiba America Electronic Components 1SS154(TE85L)

    MIXER DIODE, ULTRA HIGH FREQUENCY TO S BAND, SILICON (Also Known As: 1SS154)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS154(TE85L) 7,096
    • 1 $2.075
    • 10 $2.075
    • 100 $2.075
    • 1000 $0.7263
    • 10000 $0.6225
    		Buy Now
    1SS154(TE85L) 7,096
    • 1 $2.075
    • 10 $2.075
    • 100 $2.075
    • 1000 $0.7263
    • 10000 $0.6225
    		Buy Now

    1SS154 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS154 Kexin UHF S Band Mixer / Detector Applications Original PDF
    1SS154 Toshiba DIODE SCHOTTKY DIODE 6V 0.03A 3(1-3G1A) Original PDF
    1SS154 TY Semiconductor UHF S Band Mixer / Detector Applications - SOT-23 Original PDF
    1SS154 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS154 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    1SS154 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS154 Toshiba DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Scan PDF
    1SS154 Toshiba Schottky barrier diode for UHF-S band mixer/detector applications Scan PDF
    1SS154TE85L Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original PDF
    1SS154TE85R Toshiba 1SS154 - DIODE SILICON, UHF-S BAND, MIXER DIODE, Microwave Mixer Diode Original PDF

    1SS154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS154

    Abstract: varicap ghz
    Text: 1SS154 SPICE PARAMETER 20020226 SPICE MODEL: DATA FORMAT: SPICE SYMBOL: BERKLEY SPICE2G6 DIODE MODEL MODEL FORMAT - TT(s),EG(eV),XTI(-) FREQUENCY RANGE: f = 0.1 to 3 GHz VOLTAGE RANGE: Va = -5 to 0.4V AMBIENT TEMPERATURE:


    Original     		PDF 1SS154 85deg 26E-09 00E-04 90E-13 75E-08 00E-09 varicap ghz

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature


    Original     		PDF 1SS154 SC-59

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA


    Original     		PDF 1SS154 1SS154

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature


    Original     		PDF 1SS154 SC-59 1SS154

    smd marking BA

    Abstract: transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba 1SS154
    Text: Diodes SMD Type UHF~S BAND MIXER/DETECTOR APPLICATIONS 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector


    Original     		PDF 1SS154 OT-23 smd marking BA transistor smd marking BA transistor smd marking BA sot-23 smd transistor marking ba smd diode marking 9 ba 1SS154

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature


    Original     		PDF 1SS154 SC-59

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA


    Original     		PDF 1SS154 1SS154

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS154 ○ UHF～S バンド受信ミキサ/検波用 単位: mm z 超小型パッケージです。 絶対最大定格 Ta = 25°C 項目 記号 定格 単位 逆 電


    Original     		PDF 1SS154 1SS154

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS154 UHF~S Band Mixer/Detector Applications • Unit: mm Small package. Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Reverse voltage VR 6 V Forward current IF 30 mA Junction temperature


    Original     		PDF 1SS154 SC-59 1SS154

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS154 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector A b s o lu te M a x im u m R a tin g s T a = 2 5


    Original     		PDF 1SS154 OT-23

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original     		PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    JDV2S31CT

    Abstract: 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 高周波用半導体デバイス 当社半導体製品につきましては格別のお引き立てを賜わり誠にありがとうございます。


    Original     		PDF BCJ0003F BCJ0003E JDV2S31CT 1SV283B 1SV271 2SK1875 2sk3476 1SV128 1SV307 1SV308 DCS1800 IMT-2000

    1SS154

    Abstract: No abstract text available
    Text: TO SHIBA 1SS154 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 U H F-S BAND M IX E R / DETECTOR APPLICATIONS U nit in mm +0.5 2.5 - 0.3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC RATING 6 UNIT V Reverse Voltage


    OCR Scan     		PDF 1SS154 SC-59 10juA 1SS154

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 TO SH IB A TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 • w êêf w êêf m 5 4 wm r m UHF-S BAND MIXER /DETECTOR APPLICATIONS U n it in mm ELECTRICAL CHARACTERISTICS Ta =25°C SYMBOL Reverse Current Forward Voltage Ir Forward Voltage


    OCR Scan     		PDF 1SS154

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE U nit in mm U H F - S BAN D M IXER / DETECTOR APPLICATIONS. + 0.5 2 5 -0 3 Small Package. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward C urrent Junction Tem perature Storage Tem perature Range


    OCR Scan     		PDF 1SS154 SC-59 10//A

    Untitled

    Abstract: No abstract text available
    Text: 1SS154 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IX E R / DETECTOR APPLICATIONS +0.5 2.5-0.3 Small Package. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature


    OCR Scan     		PDF 1SS154 SC-59

    1SS154

    Abstract: SC-59 marking 1F 1fa MARKING AI500
    Text: 1SS154 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE UHF-S BAND MIXER /D ET ECT OR APPLICATIONS. U n i t in m m + 0.5 . Small Package MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Vr 6 V Forward Current If 30 mA Junction Temperature


    OCR Scan     		PDF 1SS154 1SS154 SC-59 marking 1F 1fa MARKING AI500

    k192a

    Abstract: c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995
    Text: ALPHANUMERICAL INDEX Type No. Marking Page Type No. Marking 1SS154 BA 105 1SV217 T6 175 1SS239 SI 107 1SV224 T7 177 1SS241 TY 109 1SV225 V3 179 1SS242 S2 111 1SV226 TA 181 1SS268 BF 113 1SV227 T9 183 1SS269 BG 115 1SV228 V4 185 1SS271 BD 117 1SV229 T8 188


    OCR Scan     		PDF 1SS154 1SS239 1SS241 1SS242 1SS268 1SS269 1SS271 1SS295 1SS312 1SS313 k192a c2458 C2498 C2668 C2717 C1923 Y C2499 k710 K241 C2995

    1SS154

    Abstract: No abstract text available
    Text: 1SS154 TO SH IBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 S S 1 54 Unit in mm U H F-S BAND M IXER/DETECTOR APPLICATIONS + 0 .5 2 .5 -0 .3 Small Package. MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature


    OCR Scan     		PDF 1SS154 SC-59 1SS154

    isv149

    Abstract: ISV101 iss314 ISV262 ISV172 1SS242 ISV103 ISV255 1SS239 ISV229
    Text: V a ria b le C a p a c ita n c e D iode F5 Type No. Package Type No. ISV101 - ISV102 - ISV103 Package - ISV225 MINI SUPER MINI ISV147 ISV228 ISV149 HN1V01H, HN1V02H, HN2V02H Package Type No. FM8 Type No. Package Type No. Vr Ct V (pF) Ct V r(V) (pF) Application


    OCR Scan     		PDF ISV101 ISV102 ISV103 ISV147 ISV149 ISV225 ISV228 HN1V01H, HN1V02H, HN2V02H iss314 ISV262 ISV172 1SS242 ISV255 1SS239 ISV229

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737