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    1SS190 Price and Stock

    Toshiba America Electronic Components 1SS190TE85LF

    DIODE GEN PURP 80V 100MA SC59-3
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    DigiKey 1SS190TE85LF Reel 24,000 3,000
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    1SS190TE85LF Cut Tape 5,553 1
    • 1 $0.27
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    Mouser Electronics 1SS190TE85LF 8,895
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    JRH Electronics HMTMS-108-51-S-S-190

    CONN HDR .050" 8POS
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    DigiKey HMTMS-108-51-S-S-190 Tube 253 1
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    JRH Electronics HMTMS-110-51-S-S-190

    CONN HDR .050" 10POS
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    DigiKey HMTMS-110-51-S-S-190 Tube 235 1
    • 1 $4.25
    • 10 $4.25
    • 100 $2.9455
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    JRH Electronics MTMS-105-51-S-S-190

    CONN HDR .050" 5POS
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    DigiKey MTMS-105-51-S-S-190 Bulk 189 1
    • 1 $2.45
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    JRH Electronics MTMS-104-51-S-S-190

    CONN HDR .050" 4POS
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    DigiKey MTMS-104-51-S-S-190 Bulk 185 1
    • 1 $1.96
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    Find more 1SS190 price and stock on Findchips.com

    1SS190 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS190 Galaxy Semi-Conductor Holdings Surface mount switching diode Original PDF
    1SS190 Kexin Ultra High Speed Switching Application Original PDF
    1SS190 Toshiba Japanese - Diodes Original PDF
    1SS190 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-3G1C) Original PDF
    1SS190 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS190 TY Semiconductor Ultra High Speed Switching Application - SOT-23 Original PDF
    1SS190 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS190 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS190 Toshiba Toshiba Shortform Catalog Scan PDF
    1SS190 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS190TE85L Toshiba 1SS190 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS190TE85L2 Toshiba 1SS190 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS190TE85LF Toshiba Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SW 80V 100MA S-MINI Original PDF
    1SS190TE85R Toshiba 1SS190 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS190TE85R2 Toshiba 1SS190 - DIODE 0.1 A, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS190 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking e3 sot

    Abstract: 1SS190 smd sot23 marking E3
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)


    Original     		PDF 1SS190 OT-23 marking e3 sot 1SS190 smd sot23 marking E3

    1SS190

    Abstract: No abstract text available
    Text: RECTRON 1SS190 SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 SWITCHING DIODE FEATURES * Power dissipation P D: 150 mW Tamb=25OC * Forward current I F: 100 mA * Reverse voltage VR: 80 V * Operating and storage junction temperature range TJ,Tstg: -55OCto+150OC


    Original     		PDF 1SS190 OT-23 -55OCto 150OC OT-23 MIL-STD-202E 1SS190

    MARKING toshiba

    Abstract: 1SS190 000707EAA
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS190 SC-59 MARKING toshiba 1SS190 000707EAA

    ISS190

    Abstract: 1SS190 marking e3 ISS19
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.92V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C MARKING: E3 2. CATHODE 3. ANODE Maximum Ratings @TA=25℃


    Original     		PDF OT-23 1SS190 OT-23 100mA ISS190 ISS190 1SS190 marking e3 ISS19

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SWITCHING DIODE SOT—23 FEATURES １．０ Power dissipation PD : 150 mW（Tamb=25℃） Forward Current IF : 100 mA Reverse Voltage VR : 80 V Operating and storage junction temperature range


    Original     		PDF OT-23 1SS190 100mA 037TPY 950TPY 550REF 022REF

    1SS190

    Abstract: No abstract text available
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS190 SC-59 1SS190

    Untitled

    Abstract: No abstract text available
    Text: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE WON-TOP ELECTRONICS Pb Features  High Conductance   Fast Switching Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original     		PDF 1SS190 OT-23, MIL-STD-202,

    1SS190

    Abstract: sot-23 marking code pd diode marking code E3 sot23
    Text: BL Galaxy Electrical Production specification Surface mount switching diode 1SS190 FEATURES z Pb Low forward voltage VF 3 =0.92V(typ). Lead-free z Fast switching. z Fast reverse recovery time:trr=1.6ns(typ) APPLICATIONS z High speed switching application.


    Original     		PDF 1SS190 OT-23 BL/SSSDC004 1SS190 sot-23 marking code pd diode marking code E3 sot23

    1SS190

    Abstract: No abstract text available
    Text: 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS190 OT-23 OT-23 100mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SOT-23 Switching Diode FEATURES y Low forward voltage y Fast reverse recovery time MARKING: E3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage


    Original     		PDF OT-23 1SS190 OT-23

    1SS190

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Diodes 1SS190 SWITCHING DIODE SOT-23 FEATURES Power dissipation 1. 0 mW Tamb=25℃ Forward Current 100 m A IF : Reverse Voltage 80 V VR: Operating and storage junction temperature range


    Original     		PDF OT-23 1SS190 OT-23 100mA specified190 1SS190

    1SS190

    Abstract: No abstract text available
    Text: 1SS190 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE Features SOT-23 Power dissipation P D : 150 mW Tamb=25 C Forward Current I F : 100 mA Reverse Voltage V R : 80V Operating and storage junction temperature range T j , T stg : -55 C to +150 C 3 o 2 1.


    Original     		PDF 1SS190 OT-23 OT-23 100mA 1SS190

    1SS190

    Abstract: robotics
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS190 SC-59 1SS190 robotics

    3G1c

    Abstract: 1SS190
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit in mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS190 SC-59 961001EAA2' 3G1c 1SS190

    1SS190 equivalent

    Abstract: SOT23 MARKING SB
    Text: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS190 OT-23 OT-23 J-STD-020D 2002/95/EC 100uA 100mA Jul-2010, KSYR08 1SS190 equivalent SOT23 MARKING SB

    1SS190

    Abstract: No abstract text available
    Text: 1SS190 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS190 ○ 超高速度スイッチング用 z z z z : : : : 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 単位: mm


    Original     		PDF 1SS190 SC-59 236MOD 100mA 1SS190

    top marking c3 sot23

    Abstract: marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3
    Text: 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 Surface Mount Switching Diodes SWITCHING DIODE P b Lead Pb -Free 100m AMPERES 80 VOLTS Features: * Fast Switching Speed * Surface Mount Package Ideally Suited for Automatic Insertion * High Conductance * For General Purpose Switching Applications


    Original     		PDF 1SS181/1SS184/1SS187 1SS190/1SS193/1SS196/1SS226 OT-23 OT-23, MIL-STD-202, OT-23 100mA 1SS181 1SS184 1SS187 top marking c3 sot23 marking C3 sot-23 1SS226 c3 1SS193 F3 SOT-23 DIODE 1SS184 MARKING B3 SOT-23 1SS184B3 SOT-23 marking C3 marking G3

    1SS190 equivalent

    Abstract: 1SS190 J-STD-020D
    Text: 1SS190 SURFACE MOUNT FAST SWITCHING DIODE REVERSE VOLTAGE – 80 Volts FORWARD CURRENT – 0.1 Ampere FEATURES SOT-23 • Fast Switching Speed • For general purpose switching applications SOT-23 Dim. A A1 b c D E E1 e e1 L L1 MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF 1SS190 OT-23 OT-23 J-STD-020D 2002/95/EC 1SS190 equivalent 1SS190 J-STD-020D

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 1SS190 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Low forward voltage :VF 3 = 0.92 V(Typ.) 0.55 Small Package 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Fast Reverse Recovery Time :trr = 1.6 ns(Typ.)


    Original     		PDF 1SS190 OT-23

    Untitled

    Abstract: No abstract text available
    Text: 1SS190 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS190 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF 1SS190 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS190 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS190 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.5 2.5 - 0 3 Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + 0.25 1. 5 - 0.15 : SC-59 : Vjr 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS190 SC-59 O-236MOD SC-59 01/fF 961001EAA2'

    1SS190

    Abstract: No abstract text available
    Text: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)


    OCR Scan     		PDF 1SS190 100mA 961001EAA2 961001EAA2' 1SS190

    1301C

    Abstract: 1SS190
    Text: 1SS190 SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED S W ITCHING APPLICATION. + CL5 FEATURES : . Small Package : SOT-23M0D . Low Forward Voltage : V f = 0 .9 2 V T y p . . Fast Reverse Recovery Time : trr=l*6ns(Typ.) . Small Total Capacitance


    OCR Scan     		PDF 1SS190 OT-23M0D Ta-25 SC-59 1--301C 100mA 1301C 1SS190

    Untitled

    Abstract: No abstract text available
    Text: 1SS190 TO SHIBA 1 S S 1 90 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. + 0.5 2 . 5 - 0.3 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance : SC-59 : Vp 3 = 0.92V (Typ.)


    OCR Scan     		PDF 1SS190 SC-59