CY7C4241
Abstract: IDT722X1 CY7C4201 CY7C4211 CY7C4221 CY7C4231 CY7C4251 CY7C4421 IDT72421
Text: CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 425164 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs CY7C4421 / 4201 / 4211 / 4221 CY7C4231 / 4241 / 4251 64 / 256 / 512 / 1 K / 2 K / 4 K / 8 K x 9 Synchronous FIFOs Features • Functional Description
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Original
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CY7C4421
CY7C4231
CY7C4421)
CY7C4201)
CY7C4211)
CY7C4221)
CY7C4231)
CY7C4241)
CY7C4241
IDT722X1
CY7C4201
CY7C4211
CY7C4221
CY7C4251
IDT72421
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PDF
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Untitled
Abstract: No abstract text available
Text: - D ata R A M / ROM bit 6k X 2 3 - - 8kx23 W ork RAM (bit) LCD segm ent Model No. I k x 8 /2 5 6 x 4 480 SM3503 1 5 1 2 X 8 /2 5 6 X 4 480 SM3504 < 5 1 2 X 8 /2 5 6 X 4 384 SM3507 2 k X 8 /2 5 6 X 4 540 SM3509 8 k X 8 /2 5 6 X 4 540 SM3512 MICROCOMPUTERS
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OCR Scan
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SM3503
SM3504
SM3507
SM3509
SM3512
SM3514
SM3515
SM3508
SM3511
SM3513
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PDF
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KM424C257
Abstract: No abstract text available
Text: KM424C257 CMOS VIDEO RAM 25 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual — _ Parameter Speed
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OCR Scan
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KM424C257
110ns
28-PIN
KM424C257
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PDF
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KM424C257
Abstract: 424C257 Video RAM
Text: PRELIMINARY M424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual Port DRAM. It consists of a 2 5 6 K X 4 dynamic random
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OCR Scan
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M424C257
125ns
150ns
100ns
180ns
424C257
28-PIN
KM424C257
KM424C257
Video RAM
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PDF
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KM424C257
Abstract: 6520J 509Y EZ 742 vk 739 Video RAM
Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual P a rà ifü fë r - - — Speed
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OCR Scan
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KM424C257
28-PIN
KM424C257
6520J
509Y
EZ 742
vk 739
Video RAM
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual
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OCR Scan
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KM424C257
110ns
130ns
150ns
28-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM424C257 CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual po rt Architecture 256K X 4 bits RAM port 5 1 2 x 4 bits SAM port • Performance The Samsung KM 424C257 is a CMOS 2 5 6 K X 4 bit Dual ' Parameter Speed
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OCR Scan
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KM424C257
424C257
125ns
150ns
180ns
ReC257
28-PIN
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PDF
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KMM536256
Abstract: No abstract text available
Text: KMM536256B DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 536256B is a 2 6 2 ,1 4 4 bit X 36 Dynamic RAM high density memory module. The Sam sung KM M 536256B consist ot eight CMOS 2 5 6 K X 4
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OCR Scan
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KMM536256B
536256B
20-pin
18-pin
72-pin
536256B-
130ns
KMM536256
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CMOS VIDEO RAM KM428C128 12 8 K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 128K x 8 bits RAM port 256 x 8 bits SAM port • Performance The Samsung K M 4 2 8 C 1 2 8 is a CMOS 1 2 8 K X 8 bit Dual Port DRAM. It consists ot a 1 2 8 K X 8 dynamic random
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OCR Scan
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KM428C128
40-PIN
40/44-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b4E 3 • 7 ^ 4 1 4 2 DDIBTTB TSG PRELIMINARY KM424C257 SMGK CMOS VIDEO RAM 2 5 6 K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port A rchitecture 256K x 4 b its RAM port 512 x 4 b its SAM port • Performance The Samsung KM 424C 257 is a CMOS 2 5 6 K X 4 bit Dual
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OCR Scan
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KM424C257
125ns
28-PIN
0D13625
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56E836/HB56E436 Series HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M x 4 and 4 pcs of 4 M x 1 Components)
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OCR Scan
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HB56E836/HB56E436
HB56E836
36-bit,
HB56E436
ADE-203-673A
HB56E836
16-Mbit
HM5117405)
HM514105)
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PDF
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SBS IN CIRCUIT
Abstract: Nippon capacitors
Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components)
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OCR Scan
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HB56A832BS/SBS,
HB56A432BR/SBR
HB56A832BS/SBS
32-bit,
ADE-203-728B
16-Mbit
SBS IN CIRCUIT
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI
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OCR Scan
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HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56U832 Series, HB56U432 Series HB56U832B/SB 32 MB EDO DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56U432B/SB 16 MB EDO DRAM SIMM 4-Mword X 32 bit, 2 k Refresh, 1-Bank Module (8 pcs of 4 M X 4 Components) HITACHI
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OCR Scan
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HB56U832
HB56U432
HB56U832B/SB
32-bit,
HB56U432B/SB
ADE-203-736B
16-Mbit
HM5117405)
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: AKN62414 Series AKN62424 Series 262144-Word x 16-Bit/524288-Word x 8-Bit CMOS Mask Programmable ROM A K N 6 2 4 1 4 , A K N 6 2 4 2 4 S eries is a 4-M b it C M O S m ask-prog ram ab le R O M o rg an ize d either as 2 6 2 1 4 4 -w o rd x 16-b it or as 5 2 4 2 8 8 -w o rd
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OCR Scan
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AKN62414
AKN62424
262144-Word
16-Bit/524288-Word
AKN62414P,
AKN62424P
N62414/6
15/A-1
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56A832BS/SBS, HB56A432BR/SBR Series HB56A832BS/SBS 32 MB Unbuffered FP DRAM SIMM 8-Mword X 32-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 Components HB56A432BR/SBR 16 MB Unbuffered FP DRAM SIMM 4-Mword X 32-bit, 2 k Refresh, 1-Bank Module (8 pcs o f 4 M X 4 Components)
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OCR Scan
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HB56A832BS/SBS,
HB56A432BR/SBR
HB56A832BS/SBS
32-bit,
HB56A432BR/SBR
ADE-203-728C
HB56A832BS/SBS
16-Mbit
HM5117400)
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PDF
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ITL 9
Abstract: W6106
Text: - 386- 2 M 2 5 6 K X 8 v ;U 5 1» * °- h 5Ü £ 'J «P D 4 8 2 2 3 4 - 7 0 / - 8 0 //PD 4 82 23 5 -70 /-8 0 N EC - 2 5 6 k W X 8 + 512W x 8 - 'S 5 V± 10% - U K W « * / (R A M , S A M ) (m W I X X ÍM fr $ S ü f c (m A ) ( S A M X ? > '< 4 , T 7 t -i •/)
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OCR Scan
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256KX8
PD482234-70/-80
/PD482235-70/-80
256kW
22/25lmin)
WO/IOO-W7/I07
W7/I07
ITL 9
W6106
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PDF
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CY7C425-15JI
Abstract: 7C419
Text: 2 5 6 x 9 , 5 1 2 x 9 , 1K x 9, 2 K x 9 , 4 K x 9 C ascadable FIFO Features • 256 x 9,512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write independent of depth/width
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OCR Scan
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300-mil
IDT7200,
IDT7291,
IDT7202,
IDT7203,
IDT7204
CY7C419,
CY7C420/1,
CY7C424/5,
CY7C425-15JI
7C419
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)
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OCR Scan
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HB56UW473EJN
HB56UW465EJN
72-bit,
64-bit,
ADE-203-724C
HB56UW473EJN,
Nippon capacitors
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56UW473EJN Series, HB56UW465EJN Series HB56UW473EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 72-bit, 2 k Refresh, 2-Bank Module 18 pcs of 2 M X 8 Components HB56UW465EJN 32 MB Unbuffered EDO DRAM DIMM 4-Mword X 64-bit, 2 k Refresh, 2-Bank Module (16 pcs of 2 M X 8 Components)
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OCR Scan
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HB56UW473EJN
HB56UW465EJN
HB56UW473EJN
72-bit,
HB56UW465EJN
64-bit,
ADE-203-724C
HB56UW473EJN,
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PDF
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KMM536256B-8
Abstract: KMM536256B LY 9525
Text: KMM536256B DRAM MODULES 256KX36 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M M 5 3 6 2 5 6 B is a 2 6 2 ,1 4 4 bit X 3 6 Dynamic RAM high density m em ory module. The Sam sung K M M 5 3 6 2 5 6 B con sist of eight CMOS 2 5 6 K X 4
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OCR Scan
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KMM536256B
256KX36
20-pin
18-pin
72-pin
536256B-
536256B8
130ns
150ns
180ns
KMM536256B-8
KMM536256B
LY 9525
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PDF
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M3903
Abstract: SM39
Text: MICROCOMPUTERS ★ Under development LCD segm ent Model No. 480 S M 35 03 5 1 2 x 8 /2 5 6 x 4 480 SM 3504 •5 1 2 x 8 / 2 5 6 x 4 384 S M 3507 1 184 SM 3508 2 k X 8 /2 5 6 X 4 540 SM 3509 X 8 /2 5 6 X 4 540 ★ SM 3512 Data RAM/ ROM bit Work RAM (bit)
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OCR Scan
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12BQFP
M3903
SM39
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)
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OCR Scan
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HB56G236
HB56G136
HB56G236B/SB
36-bit,
HB56G136B/SB
ADE-203-702C
16-Mbit
HM5118160)
Nippon capacitors
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PDF
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Nippon capacitors
Abstract: No abstract text available
Text: HB56G236 Series, HB56G136 Series HB56G236B/SB 8 MB FP DRAM SIMM 2-Mword X 36-bit, 1 k Refresh, 2-Bank Module 4 pcs of 1 M X 16 and 4 pcs of 1 M x 2 Components HB56G136B/SB 4 MB FP DRAM SIMM 1-Mword x 36-bit, 1 k Refresh, 1-Bank Module (2 pcs of 1 M x 16 and 2 pcs of 1 M x 2 Components)
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OCR Scan
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HB56G236
HB56G136
HB56G236B/SB
36-bit,
HB56G136B/SB
ADE-203-702C
16-Mbit
HM5118160)
Nippon capacitors
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PDF
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