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    2 N 2905 TRANSISTOR Search Results

    2 N 2905 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2 N 2905 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k 942

    Abstract: K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65
    Text: 2SC ]> • 023SbOS 00040=52 'î H S I E 6 ‘ *7_ / " i/ * / 7 PNP Silicon Planar Transistors 2 N 2904 2 N 2905 - SIEMENS AKTIENGESELLSCHAF -2 N 2904 and 2 N 2905 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41873 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF Q62702-F65 Q62702-F66 C-30V 103mA lfE-20 053SbOS -2N2904A k 942 K942 N 2904 ic 2904 N2905 2904 d 2905 2N2904 2N2904A Q62702-F65

    ic 2904

    Abstract: ir 2905 2904 2N2905 2904 d 2905 2n2904 N2905 N 2904 2904 g
    Text: 'W 2 N 2904- 2 N 2 9 0 4 A - 2N 29050 • 2N 2905 A Silizium-PNP-Epitaxial-Planar-Schalttransistoren Silicon PNP Epitaxial Planar Switching Transistors Anwendungen: Verstärker und Schalter Applications: A m plifiers and switches Besondere Merkmale: Features:


    OCR Scan     		PDF

    c2259

    Abstract: w188 N2905
    Text: 2SC D • fl23SbOS QQOMÔ^q 2 ■ SIEû PNP Silicon Planar Transistors 2 N 290 4 A 2 N 2905 A SIEMENS AKTIEN6ESELLSCHAF 2 N 2 9 0 4 A and 2 N 2 9 0 5 A are epitaxial PNP silicon planar transistors in TO 3 9 case 5 C 3 DIN 41 87 3 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF fl23SbOS 62702-F91 235bGS sa-1250 c2259 w188 N2905

    ic 2904

    Abstract: N2905
    Text: 2SC T> m 023SbOS 00040=52 'î « S I E G “ _ / ~ + 7 *'/7 2 N 2904 2 N 2905 PNP Silicon Planar Transistors - SIEMENS AKTIENGESELLSCHAF - 2 N 2 9 0 4 and 2 N 2 9 0 5 are epitaxial PNP silicon planar transistors in TO 39 case 5 C 3 DIN 41 8 7 3 . The collector is electrically connected to the case. The transistors are


    OCR Scan     		PDF 023SbOS ic 2904 N2905

    Untitled

    Abstract: No abstract text available
    Text: r 7 Z S ^ 7# G S - T H O M S O 2 N 2905 2 N 2907 N [ïfflo e œ iiL n e ra « ® G ENERAL PURPO SE AM PLIFIERS AND SW ITC HES DESCRIPTION The 2N2905 and 2N2907 are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905 and in Jedec TO-18 (for 2N2907) metal


    OCR Scan     		PDF 2N2905 2N2907 2N2905) 2N2907) 2N2905/2N2907 P008B

    2N2219

    Abstract: 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A
    Text: NPN SILICON TRANSISTORS, EPITAXIAL PLANAR *2 N T R A N S IS T O R S N P N S IL IC IU M , P L A N A R E P IT A X IA U X 2 2 1 9 ’A Compì, of 2N 2904, A - 2905, A Preferred device D isp o sitif recommandé - LF or HF small or large signal amplification A m p lific a tio n B F o u H F p e tits ou grands signaux


    OCR Scan     		PDF 218A-2219A 2N2219 2N2218 2N2219A 2N2218A 2219a 2n22191 F2N2219 2n 2219 NPN 2N 2219 2218A

    2N 2905a pnp transistor

    Abstract: 2904 st 2904 2N2905 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A
    Text: PNP SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR PNP S ILIC IU M , PLAN A R E P ITAXIAL * 2 N 2 9 0 5 , A Compì, of 2N 2218, A and 2N 2219, A ïfc Preferred device D is p o s itif recommandé • LF or HF amplification A m p lifica tio n BF ou H F v CEO


    OCR Scan     		PDF 2N2905 2N 2905a pnp transistor 2904 st 2904 2905 transistor CI 2904 2905a 2N2905A 2905 2N2904A

    2904

    Abstract: st 2904 TI 2905 2905 2907 a 2907 2N2905
    Text: 2N 2904 2N 2905 ¡SUS? SILICON PLANAR PNP GENERAL PURPOSE A M PLIFIER S AN D SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 for 2N 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and 2N 2907)


    OCR Scan     		PDF

    2904

    Abstract: 2907 a 2907 2N2904 2N2907 2N2905
    Text: 2N2904 2N 2905 2N 2906 SILICON PLANAR PNP GENERAL PURPOSE AM PLIFIERS AND SWITCHES The 2N 2904, 2N 2905, 2N 2906 and 2N 2907 are silicon planar epitaxial PNP transistors in Jedec T O -3 9 fo r 2IM 2904 and 2N 2905 and in Jedec T O -1 8 (fo r 2N 2906 and; 2N 2907)


    OCR Scan     		PDF 2N2904 -10mA 2904 2907 a 2907 2N2907 2N2905

    T056

    Abstract: 2904 2904a 2905 2906 transistor t05 PN2904 T018 BFX29 N2905
    Text: PNP Silicon Transistors PN P S ilic o n Planar Transistors fo r m ed ium level sw itching Type PTOT 2 P h/rfdO V /IO m A hF f V 5 5 4 4 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 — > 50 — 3 3 > 40 > 40 50 . 200 (10/50) 50 . 200 (0.4/10) >40 (10/150) > 40 (10/150)


    OCR Scan     		PDF 0V/50mA) 150mA/15mA) PN2904 T056 2904 2904a 2905 2906 transistor t05 T018 BFX29 N2905

    bc 192

    Abstract: BSX41 2904 BSW72 2905 2907 BSX40 N2905 BSW75
    Text: PNP Silicon Transistors PNP Silicon Epitaxial Planar Transistors lc = 500m A in T O -1 8 and T O -3 9 ( « T O - 5 ) metal ca s e s for high speed sw itch ing Type M a x im u m R a t in g s C h a r a c t e r is t ic s a t T amb = 25 ° C E J3 li h-°


    OCR Scan     		PDF 500mA) BSW72 BSX40 bc 192 BSX41 2904 2905 2907 N2905 BSW75

    1N916

    Abstract: NFP2905 NFP2905A NFP290S
    Text: NFP2905 NFP2905A A M PL IFIE R T R A N S IS T O R S P N P S IL IC O N PNP SMALL SIGNAL TRANSISTOR- DUAL M E C H A N IC A L O U T L IN E • • • • H IG H D C C U R R E N T G A IN H IG H C U R R E N T G A IN B A N D W ID T H P R O D U C T H IG H S P E E D S W IT C H IN G C IR C U IT S


    OCR Scan     		PDF NFP2905 NFP2905A NFP290S NFP2905A 10Vdc, 300ns, 1N916

    Untitled

    Abstract: No abstract text available
    Text: 3QE D • ^.3 7 .15 7=12^537 0031143 û WÊ SGS-THOMSON [»œiLegTrtHÎ «! 2N2904/2N2905 2N2906/2N2907 S G S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2904,2N2905,2N2906 and 2N2907 are sili­ con planar epitaxial PNP transistors in JedecTO-39


    OCR Scan     		PDF 2N2904/2N2905 2N2906/2N2907 2N2904 2N2905 2N2906 2N2907 JedecTO-39 2N2904, 2N2905)

    TRANSISTOR BC 313

    Abstract: 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 BSW21 2N 2222 2221-2N 2N2243 BC211 2N2195
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic 12 V PNP NPN 0,6.0,8 A < 0 ,2 A vC E O ^ \^ IS V


    OCR Scan     		PDF BSX52 BSW21 BSW22 BSX51 BSW22 TRANSISTOR BC 313 2n 3019 transistor 2N 2905a pnp transistor transistor 2N 3020 2N 2222 2221-2N 2N2243 BC211 2N2195

    3055 5C pnp transistor

    Abstract: n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905 2N2218
    Text: Switching transistors Continued Maximum ratings Characteristics ' t o t at 'c UC E O A V ^C E sat at V A *FE at / c and ^C E mA V 'o n ns CO (amb = + 4 W s Structure Fig. Nr. 5 Group Type 1q and 7B1: ; B2 mA mA mA 3; 1 2 N 708 NPN 9 0.32 0.2 15 S 0 .4


    OCR Scan     		PDF 2N2218 2N2219 3B2DIN41872 3055 5C pnp transistor n3055 2222 NPN 3055 pnp 3055 npn 3055 5c pnp N 2222 N2222 N2905

    bc 301 transistor

    Abstract: bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide ^ THOMSON-CSF 3 a r METAL-CASE/BOITIER METAL Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A < 0 ,2 A v C E O ^ \^ PNP PNP


    OCR Scan     		PDF BSX52 BSW21 BSW22 BSX51 BSW22 2N706 bc 301 transistor bc 303 transistor A2N transistor BC 170c transistor TRANSISTOR BC 650 c transistor BSX 82 BC211 transistor TRANSISTOR BC 313 BC211 transistor BC 56

    bc 107 transistor

    Abstract: transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16
    Text: general purpose and fast switching transistor selector guide guide de sélection transistors usage général et commutation rapide 3 a r ^ THOMSON-CSF M ETAL-CASE/ BOITIER M E T A L Case TO 39 Polarity PIMP NPN ic PNP NPN 0,6.0,8 A <0,2 A vC E O ^ \^ PNP


    OCR Scan     		PDF BSX52 BSW21 BSW22 BSX51 BSW22 BSX52 bc 107 transistor transistor Bc 540 BC 540 TRANSISTOR 2221-2N 2N 2222 BSX24 BC190 BC 390 Transistor 2907 TRANSISTOR PNP BSV16

    lr 2905 transistor

    Abstract: lr 2905 z LR 2905 md2904 ic 2904 MD2905
    Text: M O T O R O L A SC -CXSTRS/R F> 6367254 MOTOROLA D E | t , 3 b 7 E S 4 0 D A B 4 4 3 0 |" SC XSTRS/R F 9 6D 8 2 4 4 3 _ T M A X IM U M RATINGS Sym bol M D 2 9 0 4 ,F M D 29Q 5,F M Q 29 0 4 C ollec to r-E m itter V o lta g e VCEO 40 C ollector-B ase V o ltag e


    OCR Scan     		PDF MD2904 MD2905 MQ2904, MQ2905A 654-0T lr 2905 transistor lr 2905 z LR 2905 ic 2904

    CASE318E-04

    Abstract: Small-signal Transistors and Diodes
    Text: Section 2 Plastic-Encapsulated Transistors In Brief. . . Motorola's plastic transistors and diodes encompass h u n d re d s of d e v ic e s s p a n n in g th e ga m ut from general-purpose amplifiers and switches with a wide variety of characteristics to dedicated special-purpose devices for


    OCR Scan     		PDF OT-23, SC-59, SC-70/SOT-323, OT-223, SO-16 CASE318E-04 Small-signal Transistors and Diodes

    2222 a

    Abstract: MOTOROLA 2N2905A 2N2904 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331
    Text: PNP SILICON ANNULAR HERMETIC TRANSISTORS 2N2904,A* . . . d e s ig n e d fo r h ig h -sp e e d s w itc h in g c irc u its , DC to VHF a m p lifie r a p p lic a ­ tio n s and c o m p le m e n ta ry c irc u itry . thru • H igh DC C u rre n t G ain S p e cifie d — 0.1 to 500 m A d c


    OCR Scan     		PDF 2N2904 2N2907 /2N2905 O-205AD) 2N2904, 2N2218, 2N2219, 2N2221, 2222 a MOTOROLA 2N2905A 2N2905A RS 2N2219 MOTOROLA 2N2218 2n2907 331

    hep 230 pnp

    Abstract: Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D
    Text: TYPES 2N2904 THRU 2N2907, 2N2904A THRU 2N2907A P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 1 5 , M A R C H 1973 D ESIG NED FOR HIGH-SPEED, M EDIUM -PO W ER SW ITCH IN G A N D G EN ER A L PURPOSE A M P L IF IE R APPLICATIO N S High Breakdown Voltage Combined with Very Low Saturation Voltage


    OCR Scan     		PDF 2N2904 2N2907, 2N2904A 2N2907A 2N2221 hep 230 pnp Texas Instruments 2N2907 2N2904A TEXAS INSTRUMENTS Texas Instruments 2N2904a lr 2905 z hep 230 4151D

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N-Channel — Enhancement 3 DRAIN 2 GATE \ j. TMOS 1 SOURCE CASE 29-05, STYLE 22 TO-92 TO-226AE MAXIM UM RATINGS Symbol Value Unit Drain-Source Voltage Rating Voss 60 Vdc Gate-Source Voltage — Continuous


    OCR Scan     		PDF O-226AE)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One W att Am plifier Transistor PNP Silicon MPS6726 MPS6727 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol C ollector- Emitter Voltage Value Unit Vdc v CEO o o MPS6726 MPS6727 C ollector-Base Voltage CASE 29-05, STYLE 1


    OCR Scan     		PDF MPS6726 MPS6727 MPS6727 O-226AE)

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage


    OCR Scan     		PDF O-226AE) MPSW10