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    2.1 CHANNEL CIRCUIT Search Results

    2.1 CHANNEL CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    UC2907J Rochester Electronics LLC Power Supply Support Circuit, Adjustable, 1 Channel, CDIP16, CERAMIC, DIP-16 Visit Rochester Electronics LLC Buy
    ICL8211MTY/883B Rochester Electronics LLC Power Supply Support Circuit, Fixed, 1 Channel, BIPolar, MBCY8, PACKAGE-8 Visit Rochester Electronics LLC Buy
    ICL8211CPA Rochester Electronics LLC Power Supply Support Circuit, Fixed, 1 Channel, BIPolar, PDIP8, PACKAGE-8 Visit Rochester Electronics LLC Buy

    2.1 CHANNEL CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5.1 subwoofer AMPLIFIER CIRCUIT DIAGRAM

    Abstract: 5.1 speaker with subwoofer circuit diagram subwoofer crossover schematic sub-woofer with 5.1 amp circuit diagram BEST active subwoofer sub-woofer pc amplifier schematic circuit diagram 7.1 speaker with subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram subwoofer amplifier circuit diagram 2.1 speaker with subwoofer circuit diagram
    Text: 2.1 Channel Digital Amplifier BI3010AP1 Data Sheet Rev.1.1, 2005.06.06 Biforst Technology Inc. BI3010AP1 2.1 Channel Digital Amplifier 2.1 Channel Digital Amplifier BI3010AP1 GENERAL DESCRIPTION The BI3010AP1 is the very right choice for 2.1 channel audio systems. The BI3010AP1 is a


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    PDF BI3010AP1 BI3010AP1 32-Lreserves LQFP64 5.1 subwoofer AMPLIFIER CIRCUIT DIAGRAM 5.1 speaker with subwoofer circuit diagram subwoofer crossover schematic sub-woofer with 5.1 amp circuit diagram BEST active subwoofer sub-woofer pc amplifier schematic circuit diagram 7.1 speaker with subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram subwoofer amplifier circuit diagram 2.1 speaker with subwoofer circuit diagram

    TMPA421DS

    Abstract: TQFP48L KML2012Q102N TQFP48 bass noise filter circuits pcb VR 22K preset
    Text: Tai-1 Microelectronics www.taimec.com.tw / TMPA421DS Preliminary www.class-d.com.tw 15W + 6W x 2 Rev.2.0 December 20, 2005 2.1 Channel CLASS-D AUDIO POWER AMPLIFIER GENERAL DESCRIPTION FEATURES The TMPA421DS is a 2.1 Channel Class-D output ♦ Integrated 2.1 channel power amplifier in one


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    PDF TMPA421DS TMPA421DS TQFP48L KML2012Q102N TQFP48 bass noise filter circuits pcb VR 22K preset

    multimedia subwoofer circuit diagram

    Abstract: BEST active subwoofer 7.1 speaker with subwoofer circuit diagram 2.1 subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram sub-woofer 2.1ch 12v subwoofer amplifer circuit 12v single channel subwoofer AMPLIFIER subwoofer amplifier circuit diagram CQP1474JD
    Text: 2.1 Channel Digital Amplifier with 12V Driver Single Chip Spirit-On Only BI30020B Data Sheet Rev.1.4, 2006.02.10 Biforst Biforst Technology Inc. BI30020B 2.1Ch DAmp with 12V Driver Single Chip 2.1 Channel Digital Amplifier with 12V Driver Single Chip BI30020B


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    PDF BI30020B BI30020B multimedia subwoofer circuit diagram BEST active subwoofer 7.1 speaker with subwoofer circuit diagram 2.1 subwoofer circuit diagram 2.1 channel subwoofer amplifier circuit diagram sub-woofer 2.1ch 12v subwoofer amplifer circuit 12v single channel subwoofer AMPLIFIER subwoofer amplifier circuit diagram CQP1474JD

    Untitled

    Abstract: No abstract text available
    Text: LM4550B LM4550B AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and National 3D Sound Literature Number: SNAS276D LM4550B AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and


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    PDF LM4550B LM4550B SNAS276D 18-bit

    ds 300 subwoofer digital

    Abstract: WM8606 automotive compressor subwoofer AES17 J-STD-020B WM8602 subwoofer filter Active subwoofer circuit subwoofer amplifier standby
    Text: WM8602 w 2.1 Channel PWM Controller DESCRIPTION FEATURES The WM8602 comprises a high performance stereo + sub PWM digital power amplifier controller. Simply by adding appropriate power output stages a 2.1 channel power amplifier may be built. Two identical full audio bandwidth


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    PDF WM8602 WM8602 ds 300 subwoofer digital WM8606 automotive compressor subwoofer AES17 J-STD-020B subwoofer filter Active subwoofer circuit subwoofer amplifier standby

    4350H

    Abstract: wireless 3d SURROUND sound system
    Text: LM4550 LM4550 AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and National 3D Sound Literature Number: SNAS032E LM4550 AC '97 Rev 2.1 Multi-Channel Audio Codec with Stereo Headphone Amplifier, Sample Rate Conversion and


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    PDF LM4550 LM4550 SNAS032E 18-bit 4350H wireless 3d SURROUND sound system

    8ohm .5W speaker

    Abstract: ls1 8ohm .5W speaker TMPA221DS NB17 221DS ls1 loud speaker VR 22K preset SWITCH L3
    Text: tai'mec 2.7W + 0.6W x 2 TMPA221DS Preliminary www.taimec.com.tw / www.class-d.com.tw Rev.1.0 December 24, 2007 2.1 Channel CLASS-D AUDIO POWER AMPLIFIER GENERAL DESCRIPTION FEATURES The TMPA221DS is a 2.1 channel stereo & bass class-D audio ♦ 2.5V to 6V Single Supply


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    PDF TMPA221DS TMPA221DS 8ohm .5W speaker ls1 8ohm .5W speaker NB17 221DS ls1 loud speaker VR 22K preset SWITCH L3

    led gl3

    Abstract: No abstract text available
    Text: LM4549A LM4549A AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Literature Number: SNOS987D LM4549A AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound General Description Key Specifications


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    PDF LM4549A LM4549A SNOS987D 18-bit led gl3

    Untitled

    Abstract: No abstract text available
    Text: LM4549B LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Literature Number: SNOSAI5D LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound General Description Key Specifications


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    PDF LM4549B LM4549B 18-bit

    Untitled

    Abstract: No abstract text available
    Text: Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A ̈ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and


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    2.1 home theater circuit diagram

    Abstract: TP2050 TK2050 TC2000 P002B CON2 2pin connector audio amplifier 50w 50v J147 100V rca 3001 transistor AES17
    Text: Tr i path Technol ogy, I nc. - Techni cal I nfor m ati on EB-TK2050 CLASS-T DIGITAL AUDIO AMPLIFIER 2 CHANNEL TK2050 EVALUATION BOARD Technical Information – Board Rev. 2.1 Revision 1.0 – September 2002 GENERAL DESCRIPTION The EB-TK2050 Revision 2.1 is a stereo 50W per channel audio amplifier designed to


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    PDF EB-TK2050 TK2050 EB-TK2050 TK2050, TK2050 RES0805 P002B 2.1 home theater circuit diagram TP2050 TC2000 CON2 2pin connector audio amplifier 50w 50v J147 100V rca 3001 transistor AES17

    Untitled

    Abstract: No abstract text available
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description ̈ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


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    PDF

    FDS8935

    Abstract: C249
    Text: Dual P-Channel PowerTrench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A „ This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and


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    PDF

    FDC3535

    Abstract: marking 535
    Text: P-Channel Power Trench MOSFET -80 V, -2.1 A, 183 mΩ Features General Description „ Max rDS on = 183 mΩ at VGS = -10 V, ID = -2.1 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and


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    PDF

    INJ0002AX

    Abstract: RT3J22M
    Text: RT3J22M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J22M is a composite transistor built with two INJ0002AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3J22M RT3J22M INJ0002AX SC-88 INJ0002AX

    INK0002AX

    Abstract: RT3K22M channel mosfet
    Text: RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K22M is a composite transistor built with two INK0002AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3K22M RT3K22M INK0002AX SC-88 INK0002AX channel mosfet

    INJ0001AX

    Abstract: RT3J11M
    Text: RT3J11M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J11M is a composite transistor built with two INJ0001AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3J11M RT3J11M INJ0001AX SC-88 INJ0001AX

    INJ0011AX

    Abstract: RT3J55M vth1020v
    Text: RT3J55M Composite Transistor For high speed switching Silicon P-channel MOSFET DESCRIPTION RT3J55M is a composite transistor built with two INJ0011AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3J55M RT3J55M INJ0011AX SC-88 -100mA, INJ0011AX vth1020v

    Untitled

    Abstract: No abstract text available
    Text: FDMC8360L N-Channel Power Trench MOSFET 40 V, 80 A, 2.1 mΩ Features General Description „ Max rDS on = 2.1 mΩ at VGS = 10 V, ID = 27 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


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    PDF FDMC8360L

    RT3K33M

    Abstract: INK0003AX
    Text: RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K33M is a composite transistor built with two INK0003AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3K33M RT3K33M INK0003AX SC-88 INK0003AX

    INK0010

    Abstract: INK0010AX
    Text: RT3K44M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K44M is a composite transistor built with two INK0010AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3K44M RT3K44M INK0010AX SC-88 100mA, INK0010 INK0010AX

    INK0001AX

    Abstract: RT3K11M
    Text: RT3K11M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K11M is a composite transistor built with two INK0001AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3K11M RT3K11M INK0001AX SC-88 INK0001AX

    RT3K66M

    Abstract: INK0012AX
    Text: RT3K66M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION RT3K66M is a composite transistor built with two INK0012AX OUTLINE DRAWING Unit:mm chips in SC-88 package. FEATURE 2.1 1.25 0.425 0.425 electric current. 2.1 1.3 0.65 0.65


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    PDF RT3K66M RT3K66M INK0012AX SC-88 100mA, INK0012AX

    Untitled

    Abstract: No abstract text available
    Text: LM 4549B LM4549B AC '97 Rev 2.1 Multi-Channel Audio Codec with Sample Rate Conversion and National 3D Sound Texas In s t r u m e n t s Literature Number: SNOSAI5D t Semiconductor Septem ber 26, 2011 LM4549B AC 7 Rev 2.1 Multi-Channel Audio Codée with Sample


    OCR Scan
    PDF 4549B LM4549B LM4549B