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    2.1 GHZ TRANSISTOR Search Results

    2.1 GHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2.1 GHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AGRC10GM

    Abstract: JESD22-C101A mosfet 6 ghz z823 1661 mhz
    Text: Preliminary Data Sheet November 2004 AGRC10GM 10 W, 2.1 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 1930 MHz to 1990 MHz PCS The AGRC10GM (1.0 GHz to 2.1 GHz) is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor


    Original     		PDF AGRC10GM AGRC10GM DS04-260RFPP JESD22-C101A mosfet 6 ghz z823 1661 mhz

    Untitled

    Abstract: No abstract text available
    Text: PTF 10119 12 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output.


    Original     		PDF 1-877-GOLDMOS 1301-PTF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PTF 102001* 75 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 102001 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates with 13 dB minimum gain. Nitride surface passivation and full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    Untitled

    Abstract: No abstract text available
    Text: PTF 10123* PRELIMINARY GOLDMOS Field Effect Transistor 5 Watts, 2.1–2.2 GHz Description The 10123 is a GOLDMOS FET intended for large signal applications from 2.1 to 2.2 GHz. It operates with 47% efficiency and 11 db minimum gain. Nitride surface passivation and gold metallization ensure


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    10134

    Abstract: capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180
    Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface


    Original     		PDF 35VDC 1-877-GOLDMOS 1522-PTF 10134 capacitor siemens 4700 35 BDS31314-6-452 transistor t 2180

    resistor qbk

    Abstract: No abstract text available
    Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11


    Original     		PDF 1-877-GOLDMOS 1301-PTF10122 resistor qbk

    BDS31314-6-452

    Abstract: Transistor 4733
    Text: PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface


    Original     		PDF 35VDC 1-877-GOLDMOS 1522-PTF BDS31314-6-452 Transistor 4733

    Untitled

    Abstract: No abstract text available
    Text: GOLDMOS PTF 10119 Field Effect Transistor 12 Watts, 2.1–2.2 GHz Description The PTF 10119 is a 12–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 43% efficiency with 11 dB typical gain. Nitride surface passivation and full gold metallization


    Original     		PDF 1-877-GOLDMOS 1522-PTF

    10048

    Abstract: PTF 10048 capacitor 102 P4525-ND
    Text: PTF 10048 30 Watts, 2.1–2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor Description • • The PTF 10048 is an internally matched 30–watt GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at 40% efficiency with 10.5 dB typical gain. Nitride surface passivation


    Original     		PDF P4525-ND P220ECI 1-877-GOLDMOS 1522-PTF 10048 PTF 10048 capacitor 102 P4525-ND

    PTB 20245

    Abstract: RF NPN POWER TRANSISTOR C 10-12 GHZ
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB PTB 20245 RF NPN POWER TRANSISTOR C 10-12 GHZ

    capacitor siemens 4700 35

    Abstract: No abstract text available
    Text: PTF 10122 50 Watts WCDMA, 2.1–2.2 GHz GOLDMOS Field Effect Transistor Description • The PTF 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of


    Original     		PDF 1-877-GOLDMOS 1301-PTF10122 capacitor siemens 4700 35

    package 20223

    Abstract: No abstract text available
    Text: e PTB 20245 35 Watts, 2.1–2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is


    Original     		PDF G-200 1-877-GOLDMOS 1301-PTB package 20223

    Johanson Piston Trimmer

    Abstract: G200
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer G200

    Johanson Piston Trimmer

    Abstract: Transistor 025l
    Text: e PTB 20235 70 Watts, 2.1–2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP power output, it is specifically intended for operation as a final stage


    Original     		PDF 1-877-GOLDMOS 1301-PTB Johanson Piston Trimmer Transistor 025l

    e20231

    Abstract: 20231 transistor E101
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE e20231 20231 transistor E101

    capacitor 35 v

    Abstract: 20231 bav 17 diode
    Text: e E S A E L E -R E R P PTE 20231* 18 Watts, 2.1–2.2 GHz Cellular Radio RF Power Transistor Description The 20231 is a class A/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 18 watts minimum output power in class AB and 8 watts minimum output power


    Original     		PDF G-200, 1-877-GOLDMOS 1301-PTE capacitor 35 v 20231 bav 17 diode

    transistor number D 2498

    Abstract: No abstract text available
    Text: ERICSSON 5 PTE 10122* 50 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10122 is an internally matched common source N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 50 watts minimum


    OCR Scan     		PDF Rating10 K1206 K1206 G-200, 1-877-GOLDMOS 1301-PTE10122 transistor number D 2498

    k1206 220 r3

    Abstract: No abstract text available
    Text: ERICSSON PTE 10048* 30 Watts, 2.1-2.2 GHz LDMOS Field Effect Transistor Description The 10048 is an internally matched common source N-channel en­ hancement-mode lateral MOSFET intended for large signal amplifier applications from 2.1 to 2.2 GHz. It is rated at 30 watts power output.


    OCR Scan     		PDF K1206 K1206 1-877-GOLDMOS 1301-PTE k1206 220 r3

    c38 transistor

    Abstract: 2160 transistor Johanson Piston Trimmer
    Text: ERICSSON ^ PTB 20235 70 Watts, 2.1-2.2 GHz Wideband CDMA Power Transistor Description The 20235 is a class AB, NPN, push-pull RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Rated at 70 watts PEP minimum output power, it is specifically intended for operation as a


    OCR Scan     		PDF BATC100) c38 transistor 2160 transistor Johanson Piston Trimmer

    L450A

    Abstract: NPN transistor 5 watts Ericsson RF POWER TRANSISTOR
    Text: ERICSSON ^ PTE 20231 * 18 Watts, 2.1-2.2 GHz Cellular Radio RF Power Transistor Description The 20231 isaclassA/AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz. Bated at 18 watts minimum output power in class AB and 8 watts minimum output power


    OCR Scan     		PDF G-200. BCP56 L450A NPN transistor 5 watts Ericsson RF POWER TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Concise Catalogue 1996 DISCRETE SEMICONDUCTORS Microwave transistors RF & MICROWAVE SEMICONDUCTORS & MODULES CONTINUOUS POWER TYPES f ^CE *C P r L1 ^ Gp° 3 GHz) (V) (mA) (mW) (dB) 1 2 2 2 2.1 2.1 2.1 2.3 2.3 4 4 4.2 4.2 4.2 20 18


    OCR Scan     		PDF LEE1015TA LBE2003S LBE2009S LCE2009S LTE21009R LTE21015R LTE21025R LWE2010S LWE2015R LAE4001R

    RF NPN POWER TRANSISTOR C 10-12 GHZ

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20245 35 Watts, 2.1-2.2 GHz PCN/PCS Power Transistor Description The 20245 is a class AB, NPN com mon em itter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minim um output power for PEP applications, it is


    OCR Scan     		PDF ATC-100 G-200 BCP56 RF NPN POWER TRANSISTOR C 10-12 GHZ

    Ericsson

    Abstract: No abstract text available
    Text: ERICSSON ^ PTE 20232* 4 Watts, 2.1-2.2 GHz Cellular Radio Power Transistor Description The 20232 is a class A, NPN, com mon em itter RF power transistor intended for 24 Vdc operation across the 2.1 to 2.2 GHz frequency band. Rated at 4 watts linear output power, it may be used for both


    OCR Scan     		PDF

    PIN DIAGRAM of ic 4028

    Abstract: IC 4028 4028
    Text: PRELIMINARY DATA SHEET SILICON MMIC L-BAND DOWNCONVERTER UPC2734GR INTERNAL BLOCK DIAGRAM FEATURES_ • BROADBAND FREQUENCY OPERATION RF = 0.9 - 2.1 GHz, LO = 1.1 -2.5 GHz • HIGH DYNAMIC RANGE: • LOW DISTORTION: • SWITCHABLE IF OUTPUTS


    OCR Scan     		PDF UPC2734GR SSOP20 UPC2734G UPC2734GR 2734G UPC2734GR-E1 2500/Reel PIN DIAGRAM of ic 4028 IC 4028 4028