High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications
Abstract: ofdm amplifier NEc hemt CGH35015 power amplifier circuit diagram with pcb layout amplifiers circuit diagram CGH35015S GaN amplifier GaN photo diode operational amplifier discrete schematic
Text: From June 2007 High Frequency Electronics Copyright 2007 Summit Technical Media, LLC High Frequency Design WiMAX AMPLIFIERS High Efficiency, High Linearity GaN HEMT Amplifiers for WiMAX Applications U. H. Andre, R. S. Pengelly, A. R. Prejs and S. M. Wood, Cree Inc., and
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ATP10K100M
Abstract: 100w1000 Amplifier Research LA250
Text: 1st Half of 2014 The Complete Catalog For RF & EMC Testing RF Solid State Power Amplifiers Microwave Solid State and TWT Power Amplifiers MultiStar Multi-Tone Tester MultiStar Field Analyzers MultiStar Precision DSP Receiver RF and Microwave Antennas rf/microwave instrumentation
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250T1G3,
200T2G8A
250T8G18
January/3500
ATP10K100M
100w1000
Amplifier Research LA250
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mallory 150 series
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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Inte153
MRF20030R
mallory 150 series
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451a0
Abstract: motorola rf power transistors mtbf
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
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MRF20060R
MRF20060RS
451a0
motorola rf power transistors mtbf
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Motorola 946
Abstract: MRF2003 BD136 MJD47 MRF20030R RF amplifier mtbf
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
Motorola 946
MRF2003
BD136
MJD47
MRF20030R
RF amplifier mtbf
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BD136
Abstract: MJD47 MRF20030R
Text: MOTOROLA Order this document by MRF20030R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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MRF20030R/D
MRF20030R
BD136
MJD47
MRF20030R
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Untitled
Abstract: No abstract text available
Text: MOTOROLA The RF Sub–Micron Bipolar Line MRF20030R RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier
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MRF20030R/D
MRF20030R
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bd136 equivalent
Abstract: DIODE 851 MOTOROLA MOTOROLA ELECTROLYTIC CAPACITOR BD136 MJD47 MRF20060R MRF20060RS MURS160T3 RF NPN POWER TRANSISTOR 3 GHZ 5w 150 j47
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz.
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MRF20060R/D
MRF20060R
MRF20060RS
MRF20060R
MRF20060RS
bd136 equivalent
DIODE 851 MOTOROLA
MOTOROLA ELECTROLYTIC CAPACITOR
BD136
MJD47
MURS160T3
RF NPN POWER TRANSISTOR 3 GHZ 5w
150 j47
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VARIABLE capacitor
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA MRF20060R MRF20060RS The MRF20060R and MRF20060RS are designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices
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MRF20060R/D
MRF20060R
MRF20060RS
VARIABLE capacitor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
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MRF20060RS
MRF20060R
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BD136
Abstract: MJD47 MRF20060R MRF20060RS MURS160T3 rohm mtbf
Text: MOTOROLA Order this document by MRF20060R/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060R MRF20060RS 60 W, 2000 MHz RF POWER BROADBAND NPN BIPOLAR • Guaranteed Two–tone Performance at 2000 MHz, 26 Volts
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MRF20060R/D
MRF20060R
MRF20060RS
MRF20060R)
MRF20060R
BD136
MJD47
MRF20060RS
MURS160T3
rohm mtbf
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MRFG35010M
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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BD135
Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
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BD135
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MJD47
MRF20030
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
MOTOROLA 727
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
Abstract: MOTOROLA TRANSISTOR 935 BD136 bd136 transistor 10J capacitor RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ transistor NPN 30 watt BD135 MJD47 MRF20030
Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this
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RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
MOTOROLA TRANSISTOR 935
BD136
bd136 transistor
10J capacitor
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
transistor NPN 30 watt
BD135
MJD47
MRF20030
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high
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RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ
RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ
BD136
BD135
MJD47
RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
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db14g
Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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MRFG35010MT1
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db14g
CDR33BX104AKWS
T491X226K035AS
LL1608-FHN2K
85dBp
MRFG35010M
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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smd diode J476
Abstract: VIPER L2A RoHS Viper L2A mmic amplifier marking code N10 mosfet j279 MRF 966 Mesfet PIN diode MACOM SPICE model NCR 2400 SMA DATASHEET Datasheet MRF 899 smd wb3
Text: Device Data Library WIRELESS RF PRODUCT DEVICE DATA DL110/D Rev. 14 2/2003 wireless Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
smd diode J476
VIPER L2A RoHS
Viper L2A
mmic amplifier marking code N10
mosfet j279
MRF 966 Mesfet
PIN diode MACOM SPICE model
NCR 2400 SMA DATASHEET Datasheet
MRF 899
smd wb3
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D55342M07B
Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet
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D55342M07B
100B102JP500X
rick miller
MRFG35010M
LL-210
D55342M07
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transistor marking z11
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet
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zt158
Abstract: BD 149 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF20030 RF Pow er Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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IS22I
MRF20030
zt158
BD 149 transistor
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rohm mtbf
Abstract: kermet case b bd136 equivalent 933 TRANSISTOR SILICON PNP POWER TRANSISTOR b 861
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen cies from 1800 to 2000 MHz. The high gain and broadband performance of this
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1S211
1S22I
MRF20030
rohm mtbf
kermet case b
bd136 equivalent
933 TRANSISTOR
SILICON PNP POWER TRANSISTOR b 861
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bd135 equivalent
Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ rohm mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Arlon mallory 170 bd136 equivalent mrf2006
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line RF Pow er Bipolar Transistors M RF20060 M RF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high
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MRF20060
MRF20060S
Impedanc159
IS22I
bd135 equivalent
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
rohm mtbf
MOTOROLA ELECTROLYTIC CAPACITOR
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
Arlon
mallory 170
bd136 equivalent
mrf2006
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