Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -1 00V, rDS(ON) = 0.14 0 ft TO-254AA • Second Generation Rad Hard M O SFET Results From New Design Concepts
|
OCR Scan
|
PDF
|
FRF9150
2N7323D,
2N7323R
2N7323H
O-254AA
1000K
3000K
1-800-4-HARR
|
TC58257A
Abstract: TC58F1001P 0A000-0AFFF 18XXX EPROM sop 40
Text: TOSHIBA MOS INTEGRATED CIRCUIT IN T E G R A T E D C IR C U IT T O S H IB A TC 58F1001P/F- 15 , T C 58F 1001P /F -20 T E C H N |CAL D A T A SILICON STACKED GATE MOS TENTATIVE DATA TC58F1001P/F 131.072W ORD x 8BIT CMOS FLASH E2 PROM DESCRIPTION T he TC 58F1001P / F is a 1,048,576 bits, F lash E lectrically Erasable and Programmable Read
|
OCR Scan
|
PDF
|
TC58F1001P/F-
TC58F1001P/F-20
TC58F1001P/F
072WORD
TC58F1001P
150ns
/200ns,
TC58F1Q01P/F
TC58257A
0A000-0AFFF
18XXX
EPROM sop 40
|