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    20 AMP 1000 VOLT DIODE Search Results

    20 AMP 1000 VOLT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    20 AMP 1000 VOLT DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IGBT 50 amp 1000 volt

    Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
    Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design


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    OM9038SF OM9039SF 12-Pin IGBT 50 amp 1000 volt CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps PDF

    SMD Diode S140

    Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
    Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in


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    1812S380 1812S260 1812S220 00E-08 00E-07 00E-06 00E-05 00E-04 00E-03 00E-02 SMD Diode S140 transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812 PDF

    15 amp 1000 Volt Diode

    Abstract: 125OC
    Text: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB039C015-0 125OC SCD0966-1 15 amp 1000 Volt Diode 125OC PDF

    15 amp 1000 Volt Diode

    Abstract: 125OC
    Text: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB039C015-1-W-Ag 125OC SCD0963-1 15 amp 1000 Volt Diode 125OC PDF

    125OC

    Abstract: SB035C015 15 amp 1000 Volt Diode
    Text: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB035C015 125OC SCD0962-1 125OC 15 amp 1000 Volt Diode PDF

    125OC

    Abstract: Schottky diode wafer
    Text: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB035C015-1-W-Ag SB065C040-1-W-Ag 125OC SCD0961-1 125OC Schottky diode wafer PDF

    TF-10PC1UC

    Abstract: glass fuse color code 100761 diode catalogue TF-18PC1UC thermal fuse color code chart 12077411 12110127 glass diode color codes junior power timer
    Text: DILL BLOX MODULAR POWER DISTRIBUTION SYSTEMS PROVIDING SOLUTIONS FOR: POWER DISTRIBUTION DESIGNED FOR: FUSES CIRCUIT PROTECTION TERMINAL PROTECTION CIRCUIT BREAKERS RELAYS FLASHERS LIGHTS POWER TAPS DIODES CUSTOM COMPONENTS. Fargo Assembly of PA., Inc. 800 West Washington St. P.O. Box 550


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    TF-10PC1UC. TF-13PC1UC. TF-14PC1UC. TF-17PC1UC. TF-18PC1UC. TF-10PC1UC glass fuse color code 100761 diode catalogue TF-18PC1UC thermal fuse color code chart 12077411 12110127 glass diode color codes junior power timer PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance


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    ISO-9001 MIL-PRF-38534 25KHz MSK4357 PDF

    use igbt for 3 phase induction motor

    Abstract: 3 phase brushless 400v
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance


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    ISO-9001 MIL-PRF-38534 25KHz MSK4357 use igbt for 3 phase induction motor 3 phase brushless 400v PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance


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    ISO-9001 MIL-PRF-38534 25KHz MSK4357 PDF

    MSK4357

    Abstract: 1000 Amp current diode
    Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)


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    MIL-PRF-38534 25KHz MSK4357 1000 Amp current diode PDF

    10 amp igbt 1000 volt

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance


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    ISO-9001 MIL-PRF-38534 25KHz MSK4357 10 amp igbt 1000 volt PDF

    SB065

    Abstract: 125OC
    Text: SB060C020-3-W-Ag Schottky cr Barrier Diode Wafer 60 Mils, 20 Volt, 3 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB060C020-3-W-Ag 125OC SCD0979-1 SB065 125OC PDF

    125OC

    Abstract: No abstract text available
    Text: SB157/106C025-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 25 Volt, 20 Amp, 0.39VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage


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    SB157/106C025-20-W-Ag/Al 125OC SCD0975-1 PDF

    125OC

    Abstract: No abstract text available
    Text: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage


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    SB157/106C015-20-W-Ag/Al 125OC SCD0972-1 PDF

    100 Amp current 1300 volt diode

    Abstract: 125OC
    Text: SB051C020-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB051C020-1-W-Ag 125OC SCD0976-1 100 Amp current 1300 volt diode 125OC PDF

    Untitled

    Abstract: No abstract text available
    Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime


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    CFSH05-20L CFSH05-20L OD-882L 100mA 500mA 25-April PDF

    Untitled

    Abstract: No abstract text available
    Text: CFSH05-20L SURFACE MOUNT SILICON LOW VF SCHOTTKY DIODE 0.5 AMP, 20 VOLT w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CFSH05-20L is a silicon Schottky diode designed for applications where ultra small package size and energy efficiency are prime


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    CFSH05-20L CFSH05-20L OD-882L 100mA 500mA 25-April PDF

    transistor c1417

    Abstract: TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530
    Text: Welcome to Thomson-CSF Laser Diodes' site Welcome to the Web site of THOMSON-CSF Laser Diodes TLD your partner in Optoelectronic. TLD offers a large variety of High Power Laser Diodes (795 - 980nm), specific optoelectronic functions, and laser diode components


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    980nm) 100ppb transistor c1417 TH-C1720-F6 THOMSON ELECTRONIQUES TUBES c1417 Thomson-CSF semiconductor c1417 transistor TH-C1720 Thomson-CSF power laser diode price list C5520 c5530 PDF

    100 Amp current 1300 volt diode

    Abstract: 125OC
    Text: SB051C015-1-W-Ag Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier


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    SB051C015-1-W-Ag 125OC SCD0964-1 100 Amp current 1300 volt diode 125OC PDF

    IGBT 50 amp 1000 volt

    Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode


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    OM9038SF

    Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
    Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design


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    12-Pin OM9038SF 0M9Q39SF OM9039SF 12 VOLT 100 AMP smps diode v3e PDF

    Untitled

    Abstract: No abstract text available
    Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design


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    OM9038SF OM9039SF 12-Pin 12PLCS. 305Oswfcud 534-5776FAX PDF

    TRS601

    Abstract: No abstract text available
    Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors


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    b17aD TRS601 PDF