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    200 AMP CURRENT 1000 VOLT DIODE Search Results

    200 AMP CURRENT 1000 VOLT DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    200 AMP CURRENT 1000 VOLT DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SS5550

    Abstract: ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554
    Text: SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5108, REV - HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original     		PDF SS5550/US SS5551/US SS5552/US SS5553/US SS5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 SS5550 ss555 SS5551 SS5554 1N5552 1N5550 1N5551 1N5553 1N5554

    Untitled

    Abstract: No abstract text available
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV D JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original     		PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554

    1N5550 JANTX

    Abstract: 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV E JAN JANTX JANTXV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original     		PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 1N5550 JANTX 1n5551 diode 1N5553US 1N5551 JANTX 1N5551 1N5552 1N5553 1N5554 12 volt-30 amp power diode JANTXV 1N5552

    1N5551

    Abstract: 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554
    Text: 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US SENSITRON _ SEMICONDUCTOR TECHNICAL DATA DATA SHEET 126, REV F JAN SJ JANTX SX JANTXV SV HIGH CURRENT AXIAL LEAD RECTIFIERS DESCRIPTION: 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER -Suffix “US” denotes melf/surface mount packaging


    Original     		PDF 1N5550/US 1N5551/US 1N5552/US 1N5553/US 1N5554/US 1N5550 1N5551 1N5552 1N5553 1N5554 1N5551 1N5552 1N5553 JANTXV 1N5550 1N5553 1N5554

    SMD Diode S140

    Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
    Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in


    Original     		PDF 1812S380 1812S260 1812S220 00E-08 00E-07 00E-06 00E-05 00E-04 00E-03 00E-02 SMD Diode S140 transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812

    100 Amp current 1000 volt diode

    Abstract: 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358
    Text: MD/MDL 25000C/A Series - 25 Amp MD/MDL 35000C/A Series - 35 Amp MD/MDL 50000C/A Series - 50 Amp Rectifier Automotive Diode Data Sheet Coloured ring denotes cathode Features Oxide Passivated EPI Die Low Forward Voltage Low Leakage High Temperature Solder Compatible


    Original     		PDF 25000C/A 35000C/A 50000C/A MD25050/MDL25050 MD25600/MDL25600 MD25800/MDL25800 SCD0729-1 100 Amp current 1000 volt diode 1000 Amp current diode 100 Amp current 500 volt diode 200 Amp current 1000 volt diode MD550 50 Amp current 100 volt diode MDL25800 md356 5701 diode MD358

    IGBT 50 amp 1000 volt

    Abstract: Cree SiC MOSFET 12 VOLT 150 AMP smps circuit 24 volt 10 amp smps 10 amp igbt 1000 volt 12 VOLT 2 AMP smps circuit IGBT 50 amp 1200 volt Calculation of major IGBT operating parameters CPWR-AN03 IGBT JUNCTION TEMPERATURE CALCULATION
    Text: APPLICATION NOTE Hard Switched Silicon IGBT’s? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes By Jim Richmond Replacing the Si Ultrafast soft recovery diode used as the freewheeling component in hard switched IGBT applications with a Silicon Carbide SiC Schottky diode


    Original     		PDF

    ultrafast igbt

    Abstract: 1200-VOLT IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A
    Text: Hard-Switched Silicon IGBTs? Cut Switching Losses in Half with Silicon Carbide Schottky Diodes by Jim Richmond Replacing the Si Ultrafast soft-recovery diode used as the freewheeling component in hard-switched IGBT applications with a Silicon Carbide SiC Schottky diode reduces the switching losses in the diode by 80% and the switching


    Original     		PDF of169 1200-volt CPWR-AN03, ultrafast igbt IGBT 50 amp 1000 volt calculation of IGBT snubber CPWR-AN03 Cree SiC MOSFET 12 VOLT 10 AMP smps 24 volt 10 amp smps power diode AN-11A

    mur860 diode

    Abstract: MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA
    Text: CHAPTER 1 Numeric Data Sheet Listing http://onsemi.com 4 NUMERIC DATA SHEET LISTING Device 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 1N4936 1N4937 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 1N5817 1N5818 1N5819 1N5820 1N5821


    Original     		PDF 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 1N4933 1N4934 1N4935 mur860 diode MR854 diode rectifier diode 20 amp 800 volt 50 Amp current 512 volt diode rectifier diode 4 amp 600 volt MUR1560 DATA

    MYXDS1200-05ABS

    Abstract: silicon carbide
    Text: Silicon Carbide Schottky Diode 1200 Volt 5 Amp Hermetic MYXDS1200-05ABS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 1200V isolation in a small package outline • Higher efficiency • Reduction of heat sink requirements


    Original     		PDF MYXDS1200-05ABS O-257 MYXDS1200-05ABS silicon carbide

    MYXDS1200-03ABS

    Abstract: silicon carbide
    Text: Silicon Carbide Schottky Diode 1200 Volt 3 Amp Hermetic MYXDS1200-03ABS y r a in Product Overview Features Benefits • Essentially no switching losses • High voltage 1200V isolation in a small package outline • Higher efficiency • Reduction of heat sink requirements


    Original     		PDF MYXDS1200-03ABS O-257 MYXDS1200-03ABS silicon carbide

    marking CODE 56

    Abstract: marking code pr
    Text: WILLAS SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V FM120-M+ BAT54xxWTHRU FM1200-M+ Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE ARRAYS SOT-363 • Batch process design, excellent power dissipation offers


    Original     		PDF OT-363 OD-123+ FM120-M+ BAT54xxWTHRU FM1200-M+ OT-363 OD-123H FM120-MH FM130-MH FM140-MH marking CODE 56 marking code pr

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ BAS40x THRU FM1200-M+ SOT-23 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features SCHOTTKY BARRIER DIODE design, excellent power dissipation offers • Batch process


    Original     		PDF OT-23 OD-123+ FM120-M+ BAS40x FM1200-M+ OT-23 OD-123H FM120-MH FM130-MH FM140-MH

    MYXDS1200-10ABS

    Abstract: silicon carbide
    Text: Silicon Carbide Schottky Diode 1200 Volt 10 Amp Hermetic MYXDS1200-10ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency m i l e r P • Reduction of heat sink requirements


    Original     		PDF MYXDS1200-10ABS O-257 MYXDS1200-10ABS silicon carbide

    200 Amp current 1000 volt diode

    Abstract: No abstract text available
    Text: 25F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 25A ,VF = 1.30 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original     		PDF 00-1200V, 00-1200V 175OC 200 Amp current 1000 volt diode

    200 Amp current 1000 volt diode

    Abstract: 16f diode
    Text: 16F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 16A ,VF = 1.23 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original     		PDF 00-1200V, 00-1200V 175OC 200 Amp current 1000 volt diode 16f diode

    200 Amp current 1000 volt diode

    Abstract: 60 amp 600 Volt Diode
    Text: 12F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 12A ,VF = 1.26 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix"A" for avalanche 400-1200V O Symbol Parameter


    Original     		PDF 00-1200V, 00-1200V 144OC 175OC 200 Amp current 1000 volt diode 60 amp 600 Volt Diode

    100 Amp current 800 volt diode

    Abstract: 25 Amp 1200 volt diode 200 Amp current 1000 volt diode 206F
    Text: 6F R SERIES STANDARD RECOVERY DIODE VRRM = 100-1200V, IF(AV) = 6A ,VF = 1.1 Volt. Symbol A Cathode to Stud Shown (Anode to Stud add Suffix R) K MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Add Prefix "A" for avalanche 400-1200V O Symbol Parameter Repetitive Peak Reverse Voltage


    Original     		PDF 00-1200V, 00-1200V 175OC 100 Amp current 800 volt diode 25 Amp 1200 volt diode 200 Amp current 1000 volt diode 206F

    schottky diode marking A7 SOD

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.


    Original     		PDF OT-323 FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH schottky diode marking A7 SOD

    100 Amp current 1000 volt diode

    Abstract: 60 amp 600 Volt Diode 70HF 70amp diode Diode 1600V To 220 DO-203AB 100 Amp current 800 volt diode
    Text: 70HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 70Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 70HF(R) 70HF(R) -10 -20 Symbol 70HF(R) -40 70HF(R) -60 400


    Original     		PDF 00-1600V, 70Amp. 140OC 110OC -1200V -1600V DO-203AB 100 Amp current 1000 volt diode 60 amp 600 Volt Diode 70HF 70amp diode Diode 1600V To 220 DO-203AB 100 Amp current 800 volt diode

    IGBT 50 amp 1000 volt

    Abstract: schematic induction heating OM6555SP1 OM6555SP2 OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode
    Text: OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Free Wheeling Diodes In Multi-Chip Packages FEATURES APPLICATIONS • • • • • • • • • Two Or Four IGBTs And Free Wheeling Diodes 2500V Package Isolation Low Turn-Off Switching Losses


    Original     		PDF OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 DC340 IGBT 50 amp 1000 volt schematic induction heating OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode

    100 Amp current 1000 volt diode

    Abstract: 40HF DO-203AB diode 40amp 1400 volt diode
    Text: 40HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 40Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter 40HF(R) 40HF(R) -10 -20 Symbol Repetitive Peak Reverse Voltage


    Original     		PDF 00-1600V, 40Amp. 140OC 110OC -1200V -1600V DO-203AB 100 Amp current 1000 volt diode 40HF DO-203AB diode 40amp 1400 volt diode

    Untitled

    Abstract: No abstract text available
    Text: WILLAS FM120-M+ THRU BAV70DW FM1200-M+ SOT-363 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline SWITCHING DIODE Features • Batch process design, excellent power dissipation offers


    Original     		PDF OT-363 OD-123+ FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH

    IT13500

    Abstract: 85HF DIODE 1400 VRRM DO-203AB 200 Amp current 1000 volt diode 1400 volt diode
    Text: 85HF R Series STANDARD RECOVERY DIODE VRRM = 100-1600V, IF(AV) = 85Amp. Symbol A K Cathode to Stud Shown (Anode to Stud add Suffix R) MAXIMUM RATINGS (Tj = 25 C unless stated otherwise) Parameter Symbol Repetitive Peak Reverse Voltage VRRM Maximum Average On-State Current


    Original     		PDF 00-1600V, 85Amp. -1200V -1600V DO-203AB IT13500 85HF DIODE 1400 VRRM DO-203AB 200 Amp current 1000 volt diode 1400 volt diode