CD4062
Abstract: CD4062A CD4062AT
Text: CD4062A Types ^ ÿí, 2 ^ CMOS 200-Stage Dynamic Shift Register MAXIMUM RATINGS, Absolute-Maximum Values: STORAGE TEMPERATURE RANGE Tgrn . ~65to+150*C OPERATING-TEMPERATURE RANGE (TA):
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CD4062A
200-Stage
CD4062AT
CD4062
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fq08g
Abstract: FZ 300 R 06 KL 2SM159-200 2SM159-300 2SM159-400 2SM160-300 FR08C FR08D FR08E FR09D
Text: 170 - — • W B H * * F R 0 8 2 S M 1 5 9 / F R 0 9 ( 2 S M 16 0 ) o tä fö m & Jf} { r œ ^ 7 3 > ït! (F R 0 8 ) Í7 7 7 M S iw w tt (F R 0 9 ) ê£ FR08CÍ2SM159-200) FR09CI.2SM160-200) FR08DÍ2SM159-300Í FR09D(2SM160-300) FR08EÍ2SM159-400)
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/fr09
FR08CÃ
2SM159-200)
FR09C12SM160-200
FR08DÃ
2SM159-300Ã
FR09D
2SM160-300)
FR08EÃ
2SM159-400)
fq08g
FZ 300 R 06 KL
2SM159-200
2SM159-300
2SM159-400
2SM160-300
FR08C
FR08D
FR08E
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G24q
Abstract: No abstract text available
Text: IRFW/I610A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA M ax. @ Vos = 200V
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IRFW/I610A
G24q
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28C256
Abstract: 1N914 28C256-15 28C256-20 28C256-25 CAT28C256
Text: L .V S T CAT28C256 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 150/200/250 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max. -S tandby: 150 JJ.A Max. ■ Simple Write Operation: -O n-C hip Address and Data Latches -Self-Tim ed Write Cycle with Auto-Clear
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CAT28C256
256K-Bit
-10ms
CAT28C256
8mmx13
8mmx14mm)
500/Reel
2000/Reel
150ns
200ns
28C256
1N914
28C256-15
28C256-20
28C256-25
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1N914
Abstract: 28C256 28C256-15 28C256-20 28C256-25 A13L CAT28C256
Text: L .V S T CAT28C256 256K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: 150/200/250 ns ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max. -S tandby: 150 JJ.A Max. ■ Simple Write Operation: -O n-C hip Address and Data Latches -Self-Tim ed Write Cycle with Auto-Clear
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CAT28C256
256K-Bit
-10ms
8mmx13
8mmx14mm)
500/Reel
2000/Reel
150ns
200ns
1N914
28C256
28C256-15
28C256-20
28C256-25
A13L
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c1615
Abstract: LDD5 51C259H 51C259H-10 51C259H-12 51C259H-15 51C259H-20 C1609
Text: r a E U U Q lM M W in te f 51C259H HIGH PERFORMANCE STATIC COLUMN 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum Column Address Access Time (ns) 51C259H-1 Of 51C259H-12 51C259H-15 51C259H-20 200 150 120 100 B5 65 55 40 Fast “ Usable Speed”
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51C259H
51C259H-1
51C259H-12
51C259H-15
51C259H-20
51C259H
536x4
c1615
LDD5
51C259H-10
51C259H-20
C1609
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FSD20A60
Abstract: FSD20A30 H-17 H-18
Text: — » • Ô - t îii-n> IM 315 — < X 9 + fr''( * - K ) • «»na PSD 20A H ttW * o Jiiffiis - ê - 7 'u ■ y $0%$. (Tj = 25’C) ■ *£ * /T(RMS) Itsm 113 r-'t di/di Pgm PC(AV) Vcrm Igfm Tj Tag 180/200 (50Hz/60Hz, I E & « , 1 -i 9 ^ÜfcÜS ) 165 ( 2 —10ms)
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PSD20A
FSD20A30
FSD20A60
125-C,
50Hz/60Hz,
100mA,
H-101
FSD20A60
H-17
H-18
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SG600EX21
Abstract: SG500GXH22 SG800EX21 equivalent IGD 515 ei SG800EX21 TA8250 SG500FXF22 O200A
Text: - 78 - 2 * SG 5 0 0 rFX F, O-f-3 •y/’f, G X H j2 2 T-43 13 - 6 0 E 2 A 'i 5Ë O200A, 3300V-4500V It! ^ SG 500FXF22 SG 500GXH22 VsflM 15 VoftM 3300 500 ( 1^0=^ VTjk m , I t (RMS) 200 (7 7 = 70’C ) Vo« = % K üäm , Cj = 2 ^ F , 4500 i,= l ^ s , V i> = ^ V W ,
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SG500rFXF,
GXHj22
3-60E2A)
O200A,
SC500FXF22
SG500GXH22
di/dt-200A//US
50Hz/60Hz,
H-101
SG600EX21
SG500GXH22
SG800EX21 equivalent
IGD 515 ei
SG800EX21
TA8250
SG500FXF22
O200A
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Untitled
Abstract: No abstract text available
Text: EDD NOTES: UNLESS OTHERWISE SPECIFIED, TOLERANCES ARE ± .010” [.254mm]. I .0 3 5 . .0 2 5 0 .8 9 m m 0 .6 4 m m .200 4 X .0 3 3 [0 .8 3 m m ] .1 3 5 "" .0 0 5 .0 0 3 0 .1 2 7 m m 0 .0 7 6 m m MATERIALS: SUBSTRATE: 96% AL2 03 FINISH: RoHS COMPLIANT SOLDERABLE TERMINALS: SILVER PLATED
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254mm]
2Y194
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SM12D45
Abstract: 100S M12D45A SM12 SM12G45 SM12G45A SM12J45
Text: — 149 — * S M l 2 r D, G, J,45 TT-6 £ 1 3 - 1 O G 1A ofíKíífrlB c * « ! + > * * 12A , • 200V-600V T„ = 2 5 X ' CTO-220AB " ÍHIJ I drm V tm □cl t SM12D45 SM12G45 SM12J45 200 400 600 ¥ 12 ( Te = 9 8 ° C 1 I ts» 120 : 5 0 H z , P -t 72 ! ?— 2
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00V-600V
-220AB
SM12D45
SM12G45
SM12J45
H-101
100S
M12D45A
SM12
SM12G45A
SM12J45
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H-17
Abstract: H-18 H-19
Text: - 1 2 7 - m H I I 9 2 A TO -9 2 DTAI o m h ty W ä , 1A TO-92 n S ltttttt ( Tu—25°C) itti sii 7? DTA1C DTA1E 200 400 h i RMS) l 2’ t V 1.0 ( Tf=74°C) 8 (50Hz, ¡TSM 1 P gm 1 (/S50Hz, d u ty á l0 % ) V gm 6 I gt Min fr II -40-125 1.5 V 2 2 IV 2 Vb =12V
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-127-H
110-C,
-10ms)
/S50Hz,
dutyS10%
O-206
H-101
H-17
H-18
H-19
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SM10G14
Abstract: SM10D14 SM12J41 H-17 H-18 SM12D41 SM12G41
Text: 148 - - S M I O r D, o t TT-9 G . 14 > '1.Æ IOA H m S îfà W iÉ liÜ I d rm V tm ie ^ SM10D14 SM10G14 200 4Ö0 # VbSM ViiftM 10 /T RMS ( p-l 24.5 P gm 5 Fòt AVI /cm I tm = Vgt Kd=12V h R l = 2Q£1 ¡Ü I gt W 12 V V gd 2.5 A Ih A/¿is dv/dt °C di'/dUo
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SM10D14
SM10G14
o12A7,
H-101
SM10G14
SM12J41
H-17
H-18
SM12D41
SM12G41
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100S
Abstract: DTC120N DTC12E-N DTC12G-N DTM10C-N DTM10E-N DTM10G-N
Text: — 131 — m h 1 14 4 D T M 10 -N îo A o TO-220 M S U U fttt «iC ^ I drm V tm ¡fü T 0 - 2 2 0 •¥" D TM 10C-N D T M 1 0 E-N D T M 1 0 G -N 200 400 600 # fi V ü SM 10 (T c = 83,C ) h t KMS) 100 (50Hz, I tsm ^ A Ko-12V h ') R l =20Q 5 (/ S 5 0 H z ,
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O-220
T0-220)
DTM10C-N
DTM10E-N
DTM10G-N
/S50Hz,
dutyS10%
H-101
100S
DTC120N
DTC12E-N
DTC12G-N
DTM10G-N
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SM8G41
Abstract: M8D45 SM8D41 SM8G45 SM8J41 SM8J45
Text: 144 - - 2 * W9\-W m %-% S M 8 r D, G, J j 4 1 T T - 4 1 3 - 1 O B 1B fí -f > 8A i T„ —25°C 1 V *r — j: V tm $¿ ^ S M 8D 41 S M 8G 41 S M 8 J4 1 200 400 600 f- Vdsm V drm l 2-t 24.5 Pc M 5 Ver V Vc.D A Ih A //is d v ; dt *C dv/dti o °c Rih —40 — 125
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SM8D41
SM8G41
SM8J41
H-101
M8D45
SM8G45
SM8J41
SM8J45
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Untitled
Abstract: No abstract text available
Text: ‘> 3 7 I y-f>m Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D30SC4M Case : ITO-3P 40V 30A •Tj 150°C •P rrs m & d D •SFWS • DC/DCZlVK-i? •mm. y -A , oa«ü m •æe. RATINGS Absolute Maximum Ratings m r m n Symbol Item lii {(fnitlX
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D30SC4M
0GD3233
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M 1591
Abstract: No abstract text available
Text: P P a t e n t m FNITY L X M 1590/L X M 1591 C u s t o m i z a b l e T i i i I n f P u I nn \x i: K L I N Doc # ; 15 9 0 e n d i n g P CCFL r e l i m i n a r y DESCRIPTION I n v e r t e r D ata KEY L X M J5 9 0 series CCFL co ld cathode fluo three tasks consisting of line voltage regu
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1590/L
LXM11590/L
LXM1591
-xxxxx-01
M 1591
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D5FB20
Abstract: D2SBA20 D3SBA60 D1CA20 D1CS20 D2SBA60 D4SB60L dica20 CTU-36R D1JA20
Text: - À Ä B £ ít « D1JA20 D1 J A 6 0 D1JAK2Q D1 J S 2 0 D2 S B 2 0 D5FB20 D5FB40Z D5FB60 D5KC2Q D5KC20H A (°C) (A) rc) (V) IF (A) T (°C) ( p. A) V r (V) T (°C) ite a i- y (t')- y îf & T t '/ M v r ( 7 / - K 2^=fï'/9-hi‘ (T /-y W -V 2 a/-y î f & T t 'Jh h '} ' (1i'l-y
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CTU-31S
CTU-32S
CTU-34R
CTU-34S
D4SB60L
D4SB80
D5FB20
D5FB40Z
D5FB60
D5KC20
D2SBA20
D3SBA60
D1CA20
D1CS20
D2SBA60
dica20
CTU-36R
D1JA20
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1NU7
Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' | t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l
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DDD0317
1N599
1N599A
1N600A
1N602
1N602A
1N603
1NS03A
1N604
1N604A
1NU7
1N2487
1N1492
1N2508
IN400T
1N1711
equivalent to 1N4001
1N1490
1N2484
1N20B2
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SF400U27
Abstract: sf500u27 SF500U25 ei 280000 SF1000EX24 SF800R26 SF400L27 SF500EX26 SF300R13 SF400Q27
Text: - 24 - * M £ a « V r sm V SF300Q13 SF300R13 SF300Ü13 SF400L27 SF400N27 ms SF400Q27 SF400R27 SF400U27 SF500B27 SF500D27 SF500EX25 SP5QQEX2S SF500G27V SF 500 J 27 SF500LZ7 SF500N27 SF500Q27 SF500R27 SF500U25 SF500U26 SF500Ü27 SF500Y25 SF500Y26 SF600B27
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2-10ms
SF300Q13
SF300R13
SF300Ã
SF400L27
SF400N27
H-101
SF400U27
sf500u27
SF500U25
ei 280000
SF1000EX24
SF800R26
SF400L27
SF500EX26
SF300R13
SF400Q27
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WK16412
Abstract: wk16414 KT201 IRS 8342 WK16413 LQ470 LQ410 1PP75 KC639 KT728
Text: TESLA ELEKTRONICKE SOUCASTKiT KO N CERN R O ZN O V nO/iynpOBOÆHMKOBbie npn6opbi A H o n o ro B b ie M H T e rp a n b H b ie MMKpOCXeMbl 1 U n c fjp o B b ie M H T e rp a / ib M b ie M U K p O C X e M bl 2 rn ö p k i/ iH b ie M H T e rp a / ib H b ie MMKpOCXeMbl
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78M0S
Abstract: L78M05 L70MO5 L7BM05 28/MVL-301HR
Text: rz 7 * 7 # S C S -T H O M S O N L 7 8 M 0 0 A B /A C s e r ie s PRECISION 500mA REGULATORS . OUTPUT CURRENT UP TO 0.5A . OUTPUT VOLTAGES OF 5; 6; 8; 9: 10; 12; 15; 18; 20; 24V . THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . OUTPUT TRANSISTORS SOA PROTECTION
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500mA
L78M00AB
T0-220
78M0S
L78M05
L70MO5
L7BM05
28/MVL-301HR
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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Untitled
Abstract: No abstract text available
Text: BRIDGE RECTIFIERS PLASTIC MATERIAL U SED C A R R IE S UL 94V-0 OPERATING T EM PERA TU RE RANGE : -55 "C to +125 °C STO RAGE T EM PER A T U R E RANGE : -55'C tO+150“C TYPE Maximum Peak Reverse Voltage 1.5 AMPERES/RC-2 CASE 20 W005L W01 L W02 L W04 L W06 L
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W005L
DO-201
DO-41
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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