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    200 WATTS AUDIO AMP POWER TRANSISTORS PNP Search Results

    200 WATTS AUDIO AMP POWER TRANSISTORS PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    200 WATTS AUDIO AMP POWER TRANSISTORS PNP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


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    MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    123AP

    Abstract: NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130
    Text: NTE Electronics Transistors Bi-Polar Transistors Ñ Continued Stock No. Mfr.Õs Type Polarity and Material Description and Application 935-0755 935-0760 935-0840 935-0841 935-0845 935-0855 107 108 123A 123AP 124 126 NPN-Si NPN-Si NPN-Si NPN-Si NPN-Si PNP-Ge


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    123AP NTE159) NTE396) NTE375) NTE159 NTE123AP NTE290A 935-6072 NTE184 NTE199 NTE128 NTE293 NTE130 PDF

    TRANSISTOR MJE15031

    Abstract: mje15031
    Text: ON Semiconductor NPN MJE15028* Complementary Silicon Plastic Power Transistors MJE15030* PNP MJE15029* . . . designed for use as high−frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes • • hFE = 40 Min) @ IC = 3.0 Adc


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    MJE15028* MJE15030* MJE15029* MJE15031* MJE15028, MJE15029 MJE15030, MJE15031 O-220AB MJE15028 TRANSISTOR MJE15031 PDF

    mje243

    Abstract: mje253 mje253 transistor 200 watts audio amp power transistors
    Text: ON Semiconductor NPN MJE243 * PNP MJE253 * Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low−current, high−speed switching applications. *ON Semiconductor Preferred Device • High Collector−Emitter Sustaining Voltage —


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    MJE243 MJE253 MJE243, MJE253 mje243 mje253 transistor 200 watts audio amp power transistors PDF

    MJE200

    Abstract: MJE210
    Text: ON Semiconductor NPN MJE200 * PNP MJE210 * Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low−power, high−gain audio amplifier applications. *ON Semiconductor Preferred Device • Collector−Emitter Sustaining Voltage —


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    MJE200 MJE210 MJE200 MJE210 PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductor NPN BD787 Complementary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high−speed switching applications. • Low Collector−Emitter Sustaining Voltage — • • 4 AMPERE


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    BD787 BD788 BD787, BD788 BD787 PDF

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 PDF

    2n6031

    Abstract: 2n5631
    Text: ON Semiconductort NPN High−Voltage − High Power Transistors 2N5631 PNP 2N6031 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage − • • 16 AMPERE


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    2N5631 2N6031 2n6031 PDF

    NPN 200 VOLTS POWER TRANSISTOR

    Abstract: MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001
    Text: MOTOROLA Order this document by MJ15001/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Transistors NPN MJ15001 PNP MJ15002 The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications.


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    MJ15001/D* MJ15001/D NPN 200 VOLTS POWER TRANSISTOR MJ15002 200 watts audio amp power transistors transistor tl 187 MJ15001 motorola MJ15001 PDF

    mj15011

    Abstract: No abstract text available
    Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJ15011 * PNP MJ15012 * The MJ15011 and MJ15012 are PowerBase power transistors designed for high−power audio, disk head positioners, and other linear applications. These devices can also be used in power switching


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    MJ15011 MJ15012 MJ15011 MJ15012 PDF

    MJE243 MOTOROLA

    Abstract: MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100
    Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE243* PNP MJE253* . . . designed for low power audio amplifier and low–current, high–speed switching applications. • High Collector–Emitter Sustaining Voltage —


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    MJE243/D MJE243* MJE253* MJE243, MJE253 MJE243/D* MJE243 MOTOROLA MJE243 MJE-253 Bipolar Transistor MJE243-D transistor MJE253 equivalent 1N5825 MJE253 MSD6100 PDF

    1N5825

    Abstract: MJE200 MJE210 MSD6100 mje210 motorola
    Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Complementary Silicon Power Plastic Transistors NPN MJE200* PNP MJE210* . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage —


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    MJE200/D MJE200* MJE210* MJE200/D* 1N5825 MJE200 MJE210 MSD6100 mje210 motorola PDF

    BD81010

    Abstract: No abstract text available
    Text: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ


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    BD809 BD810 BD81010 PDF

    MJE15029

    Abstract: MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503
    Text: MOTOROLA Order this document by MJE15028/D SEMICONDUCTOR TECHNICAL DATA NPN MJE15028* MJE15030* PNP MJE15029* MJE15031* Complementary Silicon Plastic Power Transistors . . . designed for use as high–frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes


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    MJE15028/D* MJE15028/D MJE15029 MJE15031 mje15030 mje15031 MJE15028 MJE15030 transistor mje15030 MJE1503 PDF

    NPN MATCHED PAIRS

    Abstract: 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58
    Text: BI-POLAR TRANSISTORS NTE TVpe Number Polarity and Material Description and Application 59 PNP-Si High Pwr Audio Output Compl to N TE 58 60 NPN-Si High Pwr Audio, Disk Head , Positioner, Linear Applications (Compl to NTE61) 60MP NPN-Si Matched Pair of NTE60


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    NTE58) NTE61) NTE60 NTE60) NTE88) NTE87 NTE87) NTE88 b43125ci NPN MATCHED PAIRS 200 watts audio amp power transistors pnp NPN pnp MATCHED PAIRS NTE388 NTE61 NTE60 NTE6061 PNP 5GHz t0202 NTE58 PDF

    332MCP

    Abstract: NTE307 27MHz rf transmitter NTE332 T0202 NTE297 NTE300 T072 T092 297MP
    Text: Bt-POLAR TRANSISTORS NTE Type Number Polarity and Material 297MP NPN-Si 298 PNP-Si Description and Application Matched Pair of NTE297 : » Audio Amp, Driver Compì to NTE297 Collector to Base (Volts) Collector to Emitter (Volts) Emitter Case Style Diag.


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    297MP NTE297 NTE297) T0202 NTE307) 300MP NTE300 27MHz) NTE332) 332MCP NTE307 27MHz rf transmitter NTE332 NTE297 NTE300 T072 T092 PDF

    200 Ampere power transistor

    Abstract: motorola MJ15003 bipolar power transistor MJ15003 MJ15004 motorola MJ15001 MJ15001 MJ15003 transistor 50 ampere Motorola Bipolar Power Transistor Device Data MJ15002
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M J15001 PNP M J15002 Com plem entary Silicon Power Transistors The MJ15001 and MJ15002 are EpiBase power transistors designed for high power audio, disk head positioners and other linear applications. • • •


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    MJ15001 MJ15002 O-204AA 200 Ampere power transistor motorola MJ15003 bipolar power transistor MJ15003 MJ15004 motorola MJ15001 MJ15003 transistor 50 ampere Motorola Bipolar Power Transistor Device Data PDF

    nte280

    Abstract: nte291
    Text: BI-POL AR TRANSISTORS NTE Type Number Polarity and Material Description and Application 275 PNP-Si 278 NPN-Si 280 NPN-Si 280MP NPN-Si PNP-Si Darlington Pwr Amp Switch Compl to NTE274 Broad Band RF Amp, CATV/MATV Amp Audio Amp Output (Compl to NTE281) Matched Pair of NTE280


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    280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291 PDF

    JE15030

    Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade


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    MJE15028, MJE15029 MJE15030, MJE15031 -22OAB MJE15028 JE1S030M JE15029 MJE1S031 MJE15029 JE15030 JE15031 JE-15028 15029 MJE16028 JE-1502 JE15028 PDF

    transistor t4 3570

    Abstract: 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDM M JD200 Complementary Plastic Power Transistors PNP M JD210 NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, low-power, hlgh-galn audio amplifier applications. • Collector-Emltter Sustaining Voltage —


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    JD200 JD210 MJD200-1) transistor t4 3570 9y transistor transistor 3569 t4 3570 dpak T4 3570 K 3572 transistor jd PDF

    Transistor C 3199

    Abstract: LADC-100 BD790 BD792 bd791 bd789
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD789 Com plem entary Plastic Silicon Power Transistors BD791 * PNP . . . designed for low power audio amplifier and low-current, high speed switching applications. • • • • BD790 BD792* High Collector-Emitter Sustaining Voltage —


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    BD789, BD790 BD791, BD792 BD789 BD791 BD790 BD792* BD791 Transistor C 3199 LADC-100 PDF

    MJ15025

    Abstract: transistor MJ15025 MJ15023 MJ1502S mj15 1B32A
    Text: ^ M O S P E C SILICON POWER TRANSISTORS PNP M J150 23 M J1 5 0 2 5 The MJ15023 and MJ15025 are power base power transistors designed for high power audio,disk head positioners and other linear applications. FEA TU RES * High Safe Operating Area * High DC Current GainhFE= 15 Min @lc= 8.0 A VCE=4.0 V


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    MJ15023 MJ15025 MJ15025 MJ1502S MJ15025-^ transistor MJ15025 mj15 1B32A PDF

    BD787

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD787 Com plem entary Plastic Silicon Power Transistors PNP BD788 . . . designed for lower power audio amplifier and low current, high-speed switching applications. • • • 4 AMPERE POWER TRANSISTORS COMPLEMENTARY


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    BD787, BD788 BD787 BD788 BD787 Cto150° PDF

    transistor m 1104

    Abstract: je210 MJE200
    Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —


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    MJE200/D O-225AA transistor m 1104 je210 MJE200 PDF