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    20070703A Search Results

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    800 coolmos

    Abstract: No abstract text available
    Text: IXKC 13N80C Advanced Technical Information COOLMOS * Power MOSFET ISOPLUSTM Package ID25 = 13 A VDSS = 800 V RDS on max = 290 mΩ N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Electrically Isolated Back Surface ISOPLUS220 D G G D S S E72873 Features


    Original     		PDF 13N80C ISOPLUS220 E72873 20070703a 800 coolmos

    15N120

    Abstract: IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
    Text: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES = ±1200 V IC25 = 25 A VCE sat typ. = 2.5 V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C


    Original     		PDF 15N120 O-220 20070703a 15N120 IC IGBT 15N120 bi-directional switches IGBT "bi-directional switches" IGBT 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS

    dsa90c200hb

    Abstract: DSA90
    Text: DSA 90 C 200HB preliminary V RRM = 200 V I FAV = 2x 45 A V F = 0.86 V Schottky High Performance Schottky Diode Low Loss and Soft Recovery Common Cathode 1 Part number 2 3 DSA 90 C 200HB Backside: cathode Features / Advantages: Applications: Package: ● Very low Vf


    Original     		PDF 200HB O-247AD DSA90C200HB 60747and 20070703a dsa90c200hb DSA90