55-12io7
Abstract: No abstract text available
Text: VHF 55 VHO 55 VKO 55 VKF 55 Single Phase Rectifier Bridge IdAV = 53 A VRRM = 800-1600 V Preliminary data VRRM VDRM V V 800 1200 1400 1600 800 1200 1400 1600 Type VHF 55 VHO 55 xxx 55-08io7 xxx 55-12io7 xxx 55-14io7 xxx 55-16io7 xxx = type Symbol Test Conditions
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55-08io7
55-12io7
55-14io7
55-16io7
20070731a
55-12io7
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Untitled
Abstract: No abstract text available
Text: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-12P
31-12P
20070731a
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30C400HB
Abstract: 30-04A DSEC 30-04A SWITCHING DIODE 30C40
Text: Advanced Technical Information HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 400 V trr = 30 ns with common cathode and soft recovery VRSM VRRM V V 400 400 A Type C DSEC 30-04A A TO-247 AD A C A DSEC 30-04A C TAB Maximum Ratings IFRMS IFAVM TC = 145°C; rectangular, d = 0.5
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O-247
0-04A
30C400HB
20070731a
30C400HB
30-04A
DSEC 30-04A
SWITCHING DIODE
30C40
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Untitled
Abstract: No abstract text available
Text: DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM VRRM TO-263 V V 200 200 Type A DSEC 29-02AS Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM A = Anode, C = Cathode, TAB = Cathode
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29-02AS
O-263
9-02A
20070731a
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2x31-10b
Abstract: ixys dsei 2x31-10b
Text: DSEI 2x30-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 30-10P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-10P
30-10P
2x31-10P,
2x31-10B
20070731a
2x31-10b
ixys dsei 2x31-10b
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30-C200
Abstract: No abstract text available
Text: DSEC 29-02AS HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x15 A VRRM = 200 V trr = 25 ns VRSM VRRM TO-263 V V gn 200 A DSEC 29-02AS A = Anode, C = Cathode, TAB = Cathode Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5
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29-02AS
O-263
9-02A
20070731a
30-C200
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Untitled
Abstract: No abstract text available
Text: VHF 55 VHO 55 VKO 55 VKF 55 Single Phase Rectifier Bridge IdAV = 53 A VRRM = 800-1600 V Preliminary data VRSM VDSM VRRM VDRM V V 800 1200 1400 1600 800 1200 1400 1600 Type xxx 55-08io7 xxx 55-12io7 xxx 55-14io7 xxx 55-16io7 xxx = type VHF 55 VHO 55 VKF 55
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55-08io7
55-12io7
55-14io7
55-16io7
TVJM00
20070731a
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30C200HB
Abstract: No abstract text available
Text: DSEC 30-02A HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 A Type C A TO-247 AD A C A DSEC 30-02A C TAB D4 Test Conditions Maximum Ratings IFRMS IFAVM IFAVM TC = 150°C; rectangular, d = 0.5
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0-02A
O-247
20070731a
30C200HB
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DSEI IXYS 2x31-12B
Abstract: 2x31-12B
Text: DSEI 2x30-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 30-12P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-12P
30-12P
20070731a
DSEI IXYS 2x31-12B
2x31-12B
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30C200PB
Abstract: 29-02A
Text: DSEC 29-02A HiPerFREDTM Epitaxial Diode IFAV = 2x15 A VRRM = 200 V trr = 25 ns with common cathode and soft recovery VRSM VRRM V V 200 200 TO-220 AC Type A C A DSEC 29-02A C TAB Symbol Conditions IFRMS IFAVM TC = 150°C; rectangular, d = 0.5 IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine
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9-02A
O-220
20070731a
30C200PB
29-02A
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W55NE
Abstract: single phase bridge rectifier module
Text: VBO 55 IdAV = 55 A VRRM = 800-1600 V Single Phase Rectifier Bridge V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 A+ Types C~ E~ VBO 55-08NO7 VBO 55-12NO7 VBO 55-14NO7 VBO 55-16NO7 VBO 55-18NO7 B- Conditions IdAV ① TC = 100°C, module IFSM TVJ = 45°C;
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55-08NO7
55-12NO7
55-14NO7
55-16NO7
55-18NO7
20070731a
W55NE
single phase bridge rectifier module
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IXYS DSEI 2X
Abstract: 2x28A
Text: DSEI 2x31-12P IFAVM = 2x28 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1200 1200 Type DSEI 2x 31-12P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-12P
31-12P
20070731a
IXYS DSEI 2X
2x28A
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SWITCH 10P
Abstract: ixys dsei 2x30
Text: DSEI 2x31-10P IFAVM = 2x30 A VRRM = 1000 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 Type DSEI 2x 31-10P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 50°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-10P
31-10P
20070731a
SWITCH 10P
ixys dsei 2x30
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2x31-06P
Abstract: DSEI IXYS
Text: DSEI 2x31-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 31-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x31-06P
31-06P
20070731a
2x31-06P
DSEI IXYS
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ixys dsei 2x31-06c
Abstract: 2x31-06c ixys dsei ixys dsei 2x30 06c ultrasonic distance circuit design IXYS DSEI 2
Text: DSEI 2x30-06P IFAVM = 2x30 A VRRM = 600 V trr = 35 ns Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 Type DSEI 2x 30-06P Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 85°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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2x30-06P
30-06P
20070731a
ixys dsei 2x31-06c
2x31-06c
ixys dsei
ixys dsei 2x30 06c
ultrasonic distance circuit design
IXYS DSEI 2
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