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    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 19N60C5 ISOPLUS220TM E72873 20090209b 19n60

    1G25

    Abstract: No abstract text available
    Text: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions VDSS


    Original
    PDF 47-06C5 20090209b 1G25

    Untitled

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 20090209b

    Untitled

    Abstract: No abstract text available
    Text: LKK 47-06C5 Advanced Technical Information Dual CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 47 A Ω/MOSFET RDS on) max = 45 mΩ Common Source Topology DCB isoated package 4 D1 T1 2 G1 3 S 1 2 3 4 5 T2 1 G2 5 D2 Features MOSFET T1/T2 Symbol Conditions


    Original
    PDF 47-06C5 20090209b

    19n60

    Abstract: No abstract text available
    Text: IXKC 19N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 19 A VDSS = 600 V RDS on) max = 0.125 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 19N60C5 ISOPLUS220TM E72873 20090209b 19n60

    GS54

    Abstract: No abstract text available
    Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge


    Original
    PDF 15N60C5 ISOPLUS220TM E72873 20090209b GS54