BYT200PIV-400
Abstract: No abstract text available
Text: BYT200PIV-400 _ ULTRAFAST POWER RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS I f a v 2x100 A V rrm 400 V V f (max) 1.4 V FEATURES AND BENEFITS • LOW CONDUCTION LOSSES ■ NEGLIGIBLE SWITCHING LOSSES ■ HIGH AVALANCHE CAPABILITY ■ ISOLATED PACKAGE:
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BYT200PIV-400
2x100
BYT200PIV-400
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C1030 transistor
Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses
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IRGPH50KD2
-10jjs
C-1035
O-247AC
C-1036
C1030 transistor
c1036 transistor
transistor c1032
c1032
IC of XOR GATE
C1030
c1036
c1035
C-1032
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C975 transistor
Abstract: No abstract text available
Text: brtemational [ÎÔR]Rectifier PD - 5.034 CPV363MK IGBT SIP MODULE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated - 10|js @ 125°C, V ge = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses
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CPV363MK
360Vdc,
C-977
Fi9-18d
C-978
C975 transistor
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ITE35C12
Abstract: ITE35F12
Text: Si GEC PLESSEY PRELIMINARY INFORMATION S E M I C O N D U C T O R S DS4313 -1.2 IT E 3 5 F 1 2 /IT E 3 5 C 1 2 POWERLINE N-CHANNEL IGBT WITH OPTIONAL ULTRAFAST DIODE The ITE35X12 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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DS4313-1
ITE35F12/ITE35C12
ITE35X12
37bfi522
ITE35C12
ITE35F12
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Untitled
Abstract: No abstract text available
Text: PD-2.446 bïtemational S Rectifier HFA140NH60R HEXFREDT Ultrafast, Soft Recovëry Diode LUG TERM INAL CATHO DE Features • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters Vr 600V = Vf = 1.6V A i Qrr * = 1400nC
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HFA140NH60R
1400nC
200A4IS
617237066IR
Liguria49
4flS54S2
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RHR8120C
Abstract: diode T B 8A
Text: RHRP8120CC ff HARRIS S E M I C O N D U C T O R 8A, 1200V Hyperfast Dual Diode April 1995 Features Package • Hyperfast with Soft Recovery.<55ns JEDEC TO-220AB ANODE 2 CATHODE ANODE 1 • Operating Temperature. +175°C
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RHRP8120CC
O-220AB
TA49096)
RHRP8120CC
RHR8120C
diode T B 8A
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