3006S
Abstract: 10-6327-01
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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FDMS3006SDC
FDMS3006SDC
3006S
10-6327-01
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MO-240
Abstract: 10dc rectifier
Text: N-Channel PowerTrench SyncFETTM 25 V, 60 A, 2.8 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8570SDC
FDMS8570SDC
MO-240
10dc rectifier
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FDMS2506SDC
Abstract: No abstract text available
Text: FDMS2506SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.45 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2506SDC
FDMS2506SDC
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FDMS2510SDC
Abstract: 10-L41B-11
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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STK14C88-3NF35I
Abstract: SOP32 data sheet STK14C88-3 Simtek STK14C88
Text: STK14C88-3 32Kx8 AutoStore nvSRAM FEATURES DESCRIPTION • 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14C88-3 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK14C88-3
32Kx8
STK14C88-3
256Kb
ML0015
STK14C88-3NF35I
SOP32 data sheet
Simtek STK14C88
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Untitled
Abstract: No abstract text available
Text: FDMS2502SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.2 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS2502SDC
FDMS2502SDC
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FDMS8320LDC
Abstract: FDMS8320 l41b
Text: FDMS8320LDC N-Channel Dual CoolTM Power Trench MOSFET 40 V, 130 A, 1.1 mΩ Features General Description Max rDS on = 1.1 mΩ at VGS = 10 V, ID = 44 A Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A This N-Channel MOSFET is produced using Fairchild
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FDMS8320LDC
FDMS8320LDC
FDMS8320
l41b
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 2.2 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMC7660DC
FDMC7660DC
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Untitled
Abstract: No abstract text available
Text: N-Channel PowerTrench SyncFETTM 25 V, 90 A, 1.5 mΩ Features General Description SyncFETTM Schottky Body Diode This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have
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FDMS8558S
FDMS8558S
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
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SSOP-48
Abstract: STK17TA8 STK17TA8-R STK17TA8-RF25
Text: STK17TA8 128k X 8 AutoStore nvSRAM with Real Time Clock Features Description • nvSRAM Combined with Integrated Real Time Clock Functions RTC, Watchdog Timer, Clock Alarm, Power Monitor ■ Capacitor or Battery Backup for RTC ■ 25, 45 ns Read Access and Read/Write Cycle Time
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STK17TA8
20-Year
STK17TA8
SSOP-48
STK17TA8-R
STK17TA8-RF25
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Untitled
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is pr oduced using Fairchild process. Semiconductor’s advanced Power Trench® Advancements in b oth silicon and Dual CoolTM package
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FDMS86300DC
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V753
Abstract: FDMS86200DC
Text: FDMS86200DC N-Channel Dual CoolTM Power Trench MOSFET 150 V, 28 A, 17 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86200DC
FDMS86200DC
V753
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FDMS86300DC
Abstract: No abstract text available
Text: FDMS86300DC N-Channel Dual CoolTM Power Trench MOSFET 80 V, 76 A, 3.1 mΩ Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package
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FDMS86300DC
FDMS86300DC
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STK14CA8-RF45I
Abstract: SSOP-48 STK14 STK14CA8 STK14CA8-NF25I ML0022
Text: STK14CA8 128Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14CA8 is a 1Mb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK14CA8
128Kx8
STK14CA8
ML0022
STK14CA8-RF45I
SSOP-48
STK14
STK14CA8-NF25I
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SSOP-48
Abstract: STK14 STK14D88 0x07F0
Text: STK14D88 32Kx8 Autostore nvSRAM FEATURES DESCRIPTION • 25, 35, 45 ns Read Access & R/W Cycle Time The Simtek STK14D88 is a 256Kb fast static RAM with a non-volatile Quantum Trap storage element included with each memory cell. • Unlimited Read/Write Endurance
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STK14D88
32Kx8
STK14D88
256Kb
ML0033
SSOP-48
STK14
0x07F0
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kyocera CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: Matthey 100 PIN LEADLESS CHIP CARRIER kyocera kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC 20 PIN LEADLESS CHIP CARRIER kyocera kyocera 32 lead ceramic LCC package kyocera LCC ntk 32 lcc package stk 014 kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER
Text: Statement of Material Content Ceramic LCC Packages STK11C68-L STK12C68-L STK14C88-L This package type is not available in a lead-free version. Detail 28 350 LEADLESS CHIP CARRIER Unit 32 450 LEADLESS CHIP CARRIER PACKAGE MATERIALS Simtek Package ID Pin/Lead Count
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STK11C68-L
STK12C68-L
STK14C88-L
STK-91-01-2303
PB-CA1771
STK-91-01-2803
STK-40-05-007
MO-041
CQCC3-N28
5x10-8
kyocera CERAMIC LEADLESS CHIP CARRIER LCC
Matthey
100 PIN LEADLESS CHIP CARRIER kyocera
kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER LCC
20 PIN LEADLESS CHIP CARRIER kyocera
kyocera 32 lead ceramic LCC package
kyocera LCC
ntk 32 lcc package
stk 014
kyocera PACKAGE CERAMIC LEADLESS CHIP CARRIER
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Untitled
Abstract: No abstract text available
Text: FDMS3006SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 90 A, 1.9 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced
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FDMS3006SDC
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Untitled
Abstract: No abstract text available
Text: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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FDMC2512SDC
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM Power Trench SyncFETTM 30 V, 49 A, 1.9 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench®
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Untitled
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 3.5 mΩ Features General Description ̈ Dual CoolTM Top Side Cooling PQFN package ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench®
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Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package
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K1426
Abstract: aluminium 6351 IBM3229P2035 SA-12E PALCE* programming
Text: â IBM Packet Routing Switch Serial Interface Converter Databook Advance â Copyright and Disclaimer Copyright International Business Machines Corporation 1999, 2000, 2001 All Rights Reserved Printed in the United States of America March 2001 The following are trademarks of International Business Machines Corporation in the United States, or other countries, or both.
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IBM3229P2035
IBM3209K3114
IBM3229P2035.
K1426
aluminium 6351
IBM3229P2035
SA-12E
PALCE* programming
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MARKING 3020
Abstract: No abstract text available
Text: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ Features Dual Cool General Description TM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package
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FDMC3020DC
FDMC3020DC
MARKING 3020
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