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    m6 marking transistor sot-23

    Abstract: sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


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    PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23 sot-23 Marking M6 2SA812 Package M5 SOT23 transistor transistor SOT23 m6 M6 SOT23 m5 marking transistor sot-23 dc m7 footprint m6 sot package sot-23 2SC1623

    MARKING D53 SOT23

    Abstract: No abstract text available
    Text: IC SMD Type Product specification 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


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    PDF 2SD780A OT-23 200TYP. MARKING D53 SOT23

    2SD596

    Abstract: No abstract text available
    Text: Transistors IC SMD Type NPN Silicon Epitaxial Transistor 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    PDF 2SD596 OT-23 200TYP. 100mA) 2SD596

    d54 marking

    Abstract: MARKING D53 SOT23 marking D53 PT-200 2SD780A hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 1 0.55 Micro package. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SD780A OT-23 200TYP. d54 marking MARKING D53 SOT23 marking D53 PT-200 2SD780A hFE CLASSIFICATION Marking

    2SB624

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


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    PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 2SB624

    sot-23 bv4

    Abstract: 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Pb High DC current gain.hFE: 200TYP Lead-free VCE=-1.0V,IC=-100mA z 2SB624 Complimentary to the 2SD596. APPLICATIONS z Audio frequency amplifier. z Switching appilication.


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    PDF 2SB624 200TYP -100mA) 2SD596. OT-23 BL/SSSTC014 sot-23 bv4 2SB624 BV4 sot23 TRANSISTOR BV3 marking BV4 SOT23 BV2 2SD596 BV3 marking BV5 SOT-23 transistor BV4

    m6 marking transistor sot-23

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Commplementary to 2SC1623. z High DC current gain:hFE=200typ. 2SA812 Pb Lead-free VCE=-6.0V,IC=-1.0mA z High Voltage: VCEO=-50V APPLICATIONS z Audio frequency, general purpose amplifier


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    PDF 2SA812 2SC1623. 200typ. OT-23 BL/SSSTC010 m6 marking transistor sot-23

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD596 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 0.4 3 Features 1 0.55 High dc current gain. hFE:200TYP. VCE=1V, IC=100mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SD596 OT-23 200TYP. 100mA)

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    PDF 2SB624 OT-23 200TYP. -100mA) Storag00

    L6 TRANSISTOR

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


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    PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 L6 TRANSISTOR

    2SC4886

    Abstract: 2SA1860 DSA0016510
    Text: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank


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    PDF 2SC4886 2SA1860) 100max 150min 50min 500mA 60typ 200typ 26typ 35typ 2SC4886 2SA1860 DSA0016510

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification 2SD780 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SD780 OT-23 200TYP.

    MARKING SMD PNP TRANSISTOR BV

    Abstract: TRANSISTOR SMD BV 640 smd transistor marking BV SMD PT-200 2SB624
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 High dc current gain. hFE:200TYP. VCE=-1V, IC=-100mA +0.1 1.3-0.1 +0.1 2.4-0.1 Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    PDF 2SB624 OT-23 200TYP. -100mA) MARKING SMD PNP TRANSISTOR BV TRANSISTOR SMD BV 640 smd transistor marking BV SMD PT-200 2SB624

    transistor DV3

    Abstract: transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 2SB624 transistor DV1
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z 2SD596 Pb Micro package. z Lead-free Complementary to 2SB624 PNP Transistor. z High DC current gain hFE:200TYP. VCE=1.0V,IC=100mA APPLICATIONS z Audio frequency general purpose amplifier applications.


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    PDF 2SD596 2SB624 200TYP. 100mA) OT-23 BL/SSSTC024 transistor DV3 transistor dv4 2SD596 DV4 sot23 2SD596 dv3 marking DV4 marking DV5 marking code DV3 transistor DV1

    2SC4886

    Abstract: 2SA1860
    Text: 2SC4886 Silicon NPN Epitaxial Planar Transistor Complement to type 2SA1860 A hFE µA 150min V VCE=4V, IC=5A 50min∗ 3 A VCE(sat) IC=5A, IB=500mA 2.0max V PC 80(Tc=25°C) W fT VCE=12V, IE=–2A 60typ MHz Tj 150 °C COB VCB=10V, f=1MHz 200typ pF °C ∗hFE Rank


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    PDF 2SC4886 2SA1860) 100max 150min 50min 500mA 60typ 200typ 26typ 35typ 2SC4886 2SA1860

    SMD DW3

    Abstract: 2SD780 hFE CLASSIFICATION Marking
    Text: Transistors IC SMD Type NPN Silicon Epitaxia 2SD780 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 High DC current gain. hFE: 200TYP. VCE=1.0V,IC=50mA . 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features Micro package. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SD780 OT-23 200TYP. SMD DW3 2SD780 hFE CLASSIFICATION Marking

    2SC1623

    Abstract: L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SC1623 FEATURES z High DC current gain:hFE=200TYP Pb VCE=6.0V,IC=1.0mA z Lead-free High Voltage:VCEO=50V APPLICATIONS z NPN Silicon Epitaxial Planar Transistor z Audio frequency general purpose amplifier.


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    PDF 2SC1623 200TYP OT-23 BL/SSSTC0018 2SC1623 L6 TRANSISTOR sot23 MARKING CODE L6 marking L6 sot23 L5 SOT23 l5 transistor sot23 L4 marking marking l4 sot-23 l6 sot23 l7 sot-23

    RZC12N25

    Abstract: rzc15n20 CRZ0524NC RZC12W20 RZC05N50 RZC05N35 RZC15W16 RZ-12W RZC12P25 CRZ0512NC
    Text: 1/3 DC-DCコンバータ 非絶縁型・DIP RoHS指令対応製品 CRZ シリーズ 仕様・規格一覧 出力コンデンサ内蔵型 形名 最大出力電力 入力条件 入力電圧 Edc 効率 ∗1 出力特性・その他 出力電圧 Edc 最大出力電流


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    PDF CRZ0505NC CRZ0512PC CRZ0512NC CRZ0515PC CRZ0515NC CRZ0524NC CRZ0512WC CRZ0515WC 65typ. 75typ. RZC12N25 rzc15n20 RZC12W20 RZC05N50 RZC05N35 RZC15W16 RZ-12W RZC12P25

    IC-7404

    Abstract: RDH150 RDM24-2R5 RDH24-2R5 ic7404 RDM12-2R5 RDM15-4R0 ic74 RDM05-12R RDM05-6R0
    Text: 1/14 DC入力電源 単一出力・長寿命品UL/C-UL認可品 R シリーズ RDM/RDH(30 ~ 150W) 発振周波数 300kHzの高周波化で小型化を実現しました。過電圧保 護・過電流保護のフェールセイフはもちろん、RC・RS・RV など


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    PDF RDM/RDH30 300kHz 24VRDM48VRDH RDM05-6R0 RDM12-2R5 RDM15-2R0 RDM24-1R3 RDM05-12R RDM12-5R0 RDM15-4R0 IC-7404 RDH150 RDM24-2R5 RDH24-2R5 ic7404 RDM12-2R5 RDM15-4R0 ic74 RDM05-12R RDM05-6R0

    240v automatic change over switch circuit diagram

    Abstract: EN61000-4-2 RTW03-12R RTW03-12RC RTW05-10R RTW12-4R3 RTW15-3R5 RTW28-1R8 RTW48-1R1 led L-612
    Text: 1/19 Conformity to RoHS Directive AC Input Single Output, General-Purpose, UL/C-UL/TÜV Approved R Series RTW(50 to 300W) This is an ultra-thin, high-performance standard power supply that is both energy efficient and environmentally friendly. Utilizing TDK’s


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    PDF EN61000E-3-2 EN61000-4-2, 240v automatic change over switch circuit diagram EN61000-4-2 RTW03-12R RTW03-12RC RTW05-10R RTW12-4R3 RTW15-3R5 RTW28-1R8 RTW48-1R1 led L-612

    B3P5-vh-b

    Abstract: 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0
    Text: A122_JBW 1/19 TDK Switching Power Supply Wide input, compact and device-embedded type J SERIES JBW UL/CSA, EN60950 approved and Electric Appliances And Material Control Law compliant, CE marking product [FEATURES] • Compact and low price. • Wide input voltage range type.


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    PDF EN60950 B3P5-vh-b 12v dc to 170v dc JBW05-2R0 JBW24-1R3 VHR-5N TDK noise FILTER 250v 10a A122 AC Fuse 250V 30A B3P5-VH JBW05-3R0

    rectifier 240V AC 240v dc LED 50A

    Abstract: IEC1000-3-2 RAW03-20R RAW05-20R RAW12-8R4 RAW15-6R7 RAW24-4R2 RAW28-3R6 RAW48-2R1 RAW24-31R
    Text: 1/21 001-04 / 20030416 / ea111_raw.fm Power Supplies R Series RAW(100W to 1.5kW) AC Input Single Output, Long Life UL/CSA/TÜV Approved These products are meets the input harmonics current requirement and high-reliability power supplies, having the same shape


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: .030 DIA TYP. 120 *.002 .200 *oio ' r— y .200TYP. CUSTOMER DATA SHEET COIL: 26.5 VDC WINDING ol WINDING »2 1000 OHMS 1 10% 0 25° C 1000 OHMS 110% 0 25° C 13.0 VDC MUST OPERATE 13.0 VDC MUST OPERATE LAST ENERG. — j 26.5 VDC NOMINAL VOLTAGE 26.5 VDC NOMINAL VOLTAGE


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    PDF 200TYP. MIL-R-39016/45 M39016/45-0211 LS-9521L

    A1056

    Abstract: No abstract text available
    Text: .120 * 0.002 190 MAX .410 MAX 200TYP. COIL: CUSTOMER DATA SHEET 26.5 VDC 0 25°C WINDING »1 WINDING o 2 1000 OHMS - 10% 25° C 1000 OHMS Î1056 S 25° C 13.0 VDC MUST OPERATE 13,0 VDC MUST OPERATE L A S T ENERG, 26.5 VDC NOMINAL VOLTAGE 26.5 VDC NOMINAL VOLTAGE


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    PDF 200TYP. MIL-R-39016/45_ M39016/45-023M LS-9523M A1056