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    200V 10A Search Results

    200V 10A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK3160-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 10A 170Mohm To-220Fm Visit Renesas Electronics Corporation
    CS4200V-01L Coilcraft Inc Current Sense Transformer, 35A, ROHS COMPLIANT Visit Coilcraft Inc
    CS60-010S Coilcraft Inc Current Sense Transformer, 10A Visit Coilcraft Inc Buy
    CS60-010L Coilcraft Inc Current Sense Transformer, 10A, ROHS COMPLIANT Visit Coilcraft Inc
    CS1050 Coilcraft Inc Current Sense Transformer, 10A, 1:50 Visit Coilcraft Inc Buy
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    200V 10A Price and Stock

    Bourns Inc BSDH10G120E2

    SiC Schottky Diodes 1200V 10A High Surge SiC diode in TO220-2
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSDH10G120E2 Tube 50 50
    • 1 -
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    • 100 $2.49
    • 1000 $2.49
    • 10000 $2.38
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    Bourns Inc BSDW20G120C2

    SiC Schottky Diodes 1200V each 10A High Surge Dual SiC diode in TO247-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BSDW20G120C2 Tube 50 50
    • 1 -
    • 10 -
    • 100 $4.85
    • 1000 $4.75
    • 10000 $4.75
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    200V 10A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CEPF630

    Abstract: CEFF630 CEBF630
    Text: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		CEPF630/CEBF630 CEFF630 CEPF630 CEBF630 O-263 O-220 O-220F O-220/263 CEPF630 CEFF630 CEBF630 PDF

    FSF9250R4

    Abstract: 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET June 1998 [ /Title JANS R2N74 04 /Subject (15A, 200V, 0.290 Ohm, Rad Hard, PChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 15A, 200V,


    Original     		JANSR2N7404 FSF9250R4 -200V, R2N74 FSF9250R4 1E14 2E12 JANSR2N7404 Rad Hard in Fairchild for MOSFET PDF

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS230R4 JANSR2N7400 igss
    Text: JANSR2N7400 Formerly FSS230R4 8A, 200V, 0.440 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N74 00 /Subject (8A, 200V, 0.440 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 8A, 200V, 0.440


    Original     		JANSR2N7400 FSS230R4 R2N74 Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS230R4 JANSR2N7400 igss PDF

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR PDF

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2549 NTE2549 PDF

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2549 NTE2549 PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    200V transistor npn 2a

    Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
    Text: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A PDF

    1E14

    Abstract: 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET
    Text: FSJ260D, FSJ260R Data Sheet 44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 0D, FSJ26 0R /Subjec t (44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (44A, 200V, 0.050


    Original     		FSJ260D, FSJ260R FSJ26 1E14 2E12 FSJ260D FSJ260D1 FSJ260D3 FSJ260R Rad Hard in Fairchild for MOSFET PDF

    MIL-PRF-28800F

    Abstract: fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B
    Text: AC & DC Voltage Ranges 200mV, 2V, 20V, 200V, 1500VDC/1000AC DC Accuracy ±0.1% rdg, ±2dgt AC Accuracy 200mV – ±0.8% rdg, ±4dgt @ 40-500Hz 200V 1000V – ±0.8% rdg, ±4dgt (@50Hz, 60Hz) 200mV-20V – ±1.5% rdg, ±5dgt (@500Hz-5kHz) 200V – ±1.5% rdg, ±5dgt (@500Hz-2kHz)


    Original     		200mV, 1500VDC/1000AC 200mV 40-500Hz) 200mV-20V 500Hz-5kHz) 500Hz-2kHz) 60Hz-500Hz) 1500VDC 200mA, MIL-PRF-28800F fuse 10KA Wavetek fuse 10a 100ka Ct232 HD110B HV-231-10 CT236 0-30V HD115B PDF

    CEPF640

    Abstract: CEBF640 CEFF640
    Text: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D


    Original     		CEPF640/CEBF640 CEFF640 CEPF640 CEBF640 O-220 O-263 O-220F O-263 CEPF640 CEBF640 CEFF640 PDF

    CEPF640

    Abstract: CEBF640 CEFF640 AA-76
    Text: CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS ON ID @VGS CEPF640 200V 0.15Ω 19A 10V CEBF640 200V 0.15Ω 19A 10V CEFF640 200V 0.15Ω 19A d 10V Super high dense cell design for extremely low RDS(ON). D


    Original     		CEPF640/CEBF640 CEFF640 CEPF640 CEBF640 O-220 O-263 O-220F O-263 CEPF640 CEBF640 CEFF640 AA-76 PDF

    f20up20dn

    Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN power Diode 200V 10A
    Text: FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar construction.


    Original     		FFB20UP20DN FFB20UP20DN f20up20dn power Diode 200V 10A f20up20dn power Diode 200V 10A PDF

    Untitled

    Abstract: No abstract text available
    Text: PD-97808 Radiation Hardended, Solid-State Relay with Buffered Inputs Product Summary RDHB710SE20A2SX Dual, 200V, 10A 5 Part Number Breakdown Voltage Current tr / tf Logic Drive Voltage RDHB710SE20A2SX 200V 10A Controlled 3.3V 8-PIN SURFACE MOUNT Description


    Original     		PD-97808 RDHB710SE20A2SX RDHB710SE20A2SX MIL-PRF-38534 PDF

    f20up20dn

    Abstract: power Diode 200V 10A f20up20dn FFB20UP20DN F20UP
    Text: FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN_F085 is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		FFB20UP20DN f20up20dn power Diode 200V 10A f20up20dn F20UP PDF

    Untitled

    Abstract: No abstract text available
    Text: RCD100N20 Nch 200V 10A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		RCD100N20 182mW SC-63) OT-428> C10N20 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: RCD100N20 Nch 200V 10A Power MOSFET Data Sheet lOutline VDSS 200V RDS on (Max.) 182mW ID 10A PD 20W CPT3 (SC-63) <SOT-428> (1) (2) (3) lFeatures lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		RCD100N20 182mW SC-63) OT-428> C10N20 R1102A PDF

    Untitled

    Abstract: No abstract text available
    Text: HY18N20D 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-252 • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,


    Original     		HY18N20D O-252 2002/95/EC O-252 MIL-STD-750 18N20D 250mA PDF

    Untitled

    Abstract: No abstract text available
    Text: HY18N20T 200V / 18A N-Channel Enhancement Mode MOSFET 200V, RDS ON =92mW@VGS=10V, ID=10A Features TO-220AB • Low On-State Resistance • Excellent Gate Charge x RDS(ON) Product ( FOM ) • Fully Characterized Avalanche Voltage and Current • Specially Desigened for DC-DC Converter, Off-line UPS,


    Original     		HY18N20T O-220AB 2002/95/EC O-220AB MIL-STD-750 18N20T 50PCS/TUBE PDF

    irfp9240

    Abstract: IRFP9243
    Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 S E M I C O N D U C T O R -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V These are P-Channel enhancement mode silicon gate


    Original     		IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. 199st irfp9240 IRFP9243 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		JANSR2N7396 FSL230R4 PDF

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7404 Formerly FSF9250R4 15A, -200V, 0.290 Ohm, Rad Hard, P-Channel Power MOSFET January 2002 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		JANSR2N7404 FSF9250R4 -200V, PDF

    IRFP9240

    Abstract: TA17522 irfp9243
    Text: IRFP9240, IRFP9241, IRFP9242, IRFP9243 H a rris -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, TA17522. RFP9240, RFP9241, RFP9242, IRFP9240 TA17522 irfp9243 PDF

    irfp9240

    Abstract: No abstract text available
    Text: HAJims S IRFP9240, IRFP9241, IRFP9242, IRFP9243 Semiconductor y y -10A and -12A, -200V and -150V, 0.50 and 0.70 Ohm, P-Channel Power MOSFETs December 1997 Features Description • -10A and -12A, -200V and -150V • High Input Impedance These are P-Channel enhancement mode silicon gate


    OCR Scan     		IRFP9240, IRFP9241, IRFP9242, IRFP9243 -200V -150V, -150V RFP9240, irfp9240 PDF