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    200V 10A NPN TRANSISTOR Search Results

    200V 10A NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200V 10A NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    200V transistor npn 10a

    Abstract: 2SD1027 npn DARLINGTON 10A power Diode 200V 10A darlington Vce-200V darlington power transistor 10a HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON high current darlington transistor npn general purpose high voltage amplifier
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 1500 Min. @ IC= 10A, VCE= 3V ·High Collector-Emitter Sustaining Voltage: VCEO(SUS) = 200V(Min) APPLICATIONS ·Designed for general purpose amplifier applications.


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    Untitled

    Abstract: No abstract text available
    Text: , iJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA TELEPHONE: 973 376-2922 (212)227-6005 BUY73 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 200V(Min.) • Low Collector Saturation Voltage:V C E(.at)=1.4V@l c =10A


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    BUY73 PDF

    transistor 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)


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    2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area PDF

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


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    JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373 PDF

    2N6250

    Abstract: 2N6251 2N6249
    Text: SavantIC Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage,high speed ·Low collector saturation voltage APPLICATIONS ·High voltage inverters ·Switching regulators ·Line operated amplifier


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    2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 PDF

    2N6251

    Abstract: 2N6249 2N6250
    Text: Product Specification www.jmnic.com 2N6249 2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ・Low saturation voltage ・Fast switching capability APPLICATIONS ・For high voltage inverters ,switching regulators


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    2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 PDF

    2N6250

    Abstract: 2N6251 2N6249
    Text: Inchange Semiconductor Product Specification 2N6249 2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage,high speed ・Low collector saturation voltage APPLICATIONS ・High voltage inverters ・Switching regulators ・Line operated amplifier


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    2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 PDF

    200V transistor npn 2a

    Abstract: 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A
    Text: NTE2557 Silicon NPN Transistor Darlington, High Voltage Switch, Power Amp Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2557 200V transistor npn 2a 200V transistor npn 10a NTE2557 npn DARLINGTON 10A 22a ic Darlington npn 2 amp power Diode 200V 10A PDF

    darlington Vce-200V

    Abstract: 2SD2196 NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD2196 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High DC current gain ·DARLINGTON PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol Absolute maximum ratings(Ta=25 )


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    2SD2196 darlington Vce-200V 2SD2196 NPN POWER DARLINGTON TRANSISTORS PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    nte2650

    Abstract: nte2649
    Text: NTE2649 Silicon NPN Transistor Darlington Compl to NTE2650 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2649 NTE2650) nte2650 nte2649 PDF

    2SC4140

    Abstract: 200v dc 10A voltage regulator
    Text: SavantIC Semiconductor Product Specification 2SC4140 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High voltage ·High speed switching APPLICATIONS ·For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base


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    2SC4140 2SC4140 200v dc 10A voltage regulator PDF

    nte2649

    Abstract: NTE2650 pnp 200v ie 10a SILICON COMPLEMENTARY transistors darlington
    Text: NTE2649 NPN & NTE2650 (PNP) Silicon Complementary Transistors Darlington Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE2649 NTE2650 nte2649 NTE2650 pnp 200v ie 10a SILICON COMPLEMENTARY transistors darlington PDF

    2SC4140

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC4140 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High voltage ・High speed switching APPLICATIONS ・For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SC4140 2SC4140 PDF

    2SD2488

    Abstract: NPN POWER DARLINGTON TRANSISTORS
    Text: SavantIC Semiconductor Product Specification 2SD2488 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


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    2SD2488 2SD2488 NPN POWER DARLINGTON TRANSISTORS PDF

    2SC4109

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4109 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications


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    2SC4109 00V/16A 2SC4109 PDF

    2SC4109

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4109 Silicon NPN Power Transistors DESCRIPTION •With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications


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    2SC4109 00V/16A 2SC4109 PDF

    2SC4424

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4424 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide ASO. APPLICATIONS ·Switching regulator applications PINNING PIN


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    2SC4424 2SC4424 PDF

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


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    2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 PDF

    200V transistor npn 10a

    Abstract: 2N6249 2N6250 2N6251 200v 10a npn transistor
    Text: D a ta sh e e t 2N6249 2N6250 2N6251 C G n t i Q i Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 NPN SILICON TRANSISTOR JEDEC TO-3 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION


    OCR Scan
    2N6249 2N6250 2N6251 2N6249, 2N6250, 2N6251 200Vf 2N6249 2N6250 200V transistor npn 10a 200v 10a npn transistor PDF

    SOLITRON DEVICES

    Abstract: No abstract text available
    Text: at SOLITRON DEVICES INC 7-. DE I û3t.flfaDS DDDSSb'i S ELEMENT NUMBER 144 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 À Aluminum FORMERLY 44 Collector: Polished Silicon


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    45mmx6 25mmx3 203mm) 40MHz 40MHz 300pF SOLITRON DEVICES PDF

    200V transistor npn 20a

    Abstract: Transistor 200V 20A 2N3846 200V transistor npn 10a
    Text: SOLITRON DEVICES INC flt D E|a3tflb O B ODOESbO t 7" - 3 3 - 0 $ 114 ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, FAST SWITCHNG NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR CONTACT M ETALLIZATIO N Base and emitter: > F O R M E R L Y 14 5 0 . 0 0 0 A Aluminum Collector: Gold


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    99mml 600pF 600pF SDT14305, 2N3846, SDT14414, 200V transistor npn 20a Transistor 200V 20A 2N3846 200V transistor npn 10a PDF

    transistor 2n5330

    Abstract: transistor c63 NPN Transistor VCEO 80V 100V
    Text: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)


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    203mm) 40MHz 40MHz 300pF transistor 2n5330 transistor c63 NPN Transistor VCEO 80V 100V PDF

    SDT7601

    Abstract: No abstract text available
    Text: 8 3 6 8 6 0 2 SO L IT RO N D E V I C E S ELEMENT NUMBER flb INC 86 D 0 2 5 7 5 dF | fl3hfib02 0 0D 5 S7 S fi |~_ 185 MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR * CONTACT METALLIZATION Base and emitter: > 3 0 .0 0 0 A Aluminum


    OCR Scan
    fl3hfib02 203mm) 40MHz 40MHz 300pF SDT7601 PDF