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    200V 3A ULTRA FAST RECOVERY DIODE Search Results

    200V 3A ULTRA FAST RECOVERY DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    200V 3A ULTRA FAST RECOVERY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TO-220FN

    Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
    Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss


    Original     		PDF O-220FN, O-220FN Fa301B2S RF501B2S RF601B2D RF601T2D RF1001T2D RF1601T2D RF2001T2D TO-220FN RF diodes TO220FN 10na common anode fast

    TO-220FN

    Abstract: LOW LOSS FAST RECOVERY DUAL DIODES RF603B2D TO220FN 220FN RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S
    Text: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss


    Original     		PDF O-220FN, O-220FN RF303B2S RF503B2S RF603B2D RF603T2D RF1003T2D TO-220FN LOW LOSS FAST RECOVERY DUAL DIODES RF603B2D TO220FN 220FN RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S

    RF071M2S

    Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
    Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss


    Original     		PDF O-220FN, O-220FN RF071M2S RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN

    D-PACK

    Abstract: RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd
    Text: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss


    Original     		PDF O-220FN, O-220FN D-PACK RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd

    HFA25PB60

    Abstract: IRFP250
    Text: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and Switching


    Original     		PDF HFA25PB60 112nC HFA25PB60 IRFP250

    200v 3A ultra fast recovery diode

    Abstract: VR150A
    Text: RF601T2D Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2


    Original     		PDF RF601T2D O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A 200v 3A ultra fast recovery diode VR150A

    200v 3A ultra fast recovery diode

    Abstract: RF601T
    Text: Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm  Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2


    Original     		PDF RF601T2D O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A 200v 3A ultra fast recovery diode RF601T

    NTE588

    Abstract: No abstract text available
    Text: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier


    Original     		PDF NTE588 200kHz 155pF NTE588

    HFA30PA60C

    Abstract: IRFP250 irf 44 ns
    Text: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features • • • • • • Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits • Reduced RFI and EMI


    Original     		PDF HFA30PA60C HFA30PA60C IRFP250 irf 44 ns

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss


    Original     		PDF RF301B2S SC-63 200pF 100pF R1120A

    DC1002

    Abstract: No abstract text available
    Text: RF301B2S Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss


    Original     		PDF RF301B2S SC-63 200pF 100pF R1120A DC1002

    fast recovery diode

    Abstract: No abstract text available
    Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss


    Original     		PDF RF301B2S SC-63 200pF 100pF R1120A fast recovery diode

    500W TRANSISTOR AUDIO AMPLIFIER

    Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
    Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,


    Original     		PDF Power247TM, 500W TRANSISTOR AUDIO AMPLIFIER IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet

    RF601T2D

    Abstract: No abstract text available
    Text: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2


    Original     		PDF RF601T2D O-220) O220FN 60Hz1cyc RF601T2D

    Untitled

    Abstract: No abstract text available
    Text: RF601B2D Diodes Fast recovery diodes RF601B2D zExternal dimensions Unit : mm 6.5±0.2 5.1±0.2 0.1 zLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 0.5±0.1 9.5±0.5 5.5±0.3 0.1 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF


    Original     		PDF RF601B2D SC-63

    RF601T2D

    Abstract: No abstract text available
    Text: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zDimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2 0.1


    Original     		PDF RF601T2D O-220) O220FN 60Hz1cyc RF601T2D

    Untitled

    Abstract: No abstract text available
    Text: S3 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Package Features AL-4 • Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Leakage Current ANODE • High Surge Current Capability


    OCR Scan     		PDF A315A, A315B, A315F, A315G 50/100NS/CM) 25VDC

    A315A

    Abstract: A315B A315 A315F A315G
    Text: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability


    OCR Scan     		PDF A315A, A315B, A315F, A315G 50/100NS/CM) 25VDC A315A A315B A315 A315F

    Transistor RKU

    Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
    Text: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)


    OCR Scan     		PDF HFA30PA60C HFA30PA60C Employ90745 Transistor RKU 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common

    Untitled

    Abstract: No abstract text available
    Text: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100&#39;-~200V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability


    OCR Scan     		PDF C6P10F C6P20F F6P10F F6P20F A/100 00V/trr 30nsec T0-220AB C6P10F

    0C28

    Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
    Text: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA&#39;Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common


    OCR Scan     		PDF A/100 00V/trr 30nsec 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF O-251AA O-252AA T0-252AA 0C28 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE

    GE234

    Abstract: No abstract text available
    Text: MES1304 MES1305 MES1306 Microsemi Corp. ' The diode experts SANTA A N A . CA SCOTTSDALE, A Z F o r m ore in fo rm a tio n call: 7I4 9 7 9 -8 2 2 0 Ultra Fast Switching Rectifier FEATURES • M IC R O M IN IA TU R E PACK AGE f*— .040 NOM. DIA. \ i • VDIDLESS HERM ETICALLY SEALED G U S S PACKAGE


    OCR Scan     		PDF MES1304 MES1305 MES1306 MES1301 MES1303 GE234

    1451AQ

    Abstract: No abstract text available
    Text: / Microsemi Corp. M E S 1304 M E S 1305 M E S 1306 ’ The diode experts S A N T A A N A , CA F o r m o re in fo rm a tio n call: 714 9 7 9 -8 2 2 0 U ltra Fast S w itching R ectifier FEA TU RES • MICROMINIATURE PACKAGE • .040 NOM. DIA. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V


    OCR Scan     		PDF HFA30TA60C D-6380