TF561S
Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l
Text: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S
|
Original
|
TF321M
TF321S
TF521M
TF521S
TF821M
TF821S
TF321M-A
TF341M
TF361M
TF341S
TF561S
Thyristor to220
600v 12A TO220F
TF541M
tf541m 22 l
|
PDF
|
FZT956
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current
|
Original
|
FZT956
OT223
-200V
-165mV
AEC-Q101
OT223
J-STD-020
MIL-STD-202,
FZT956
DS36119
|
PDF
|
pnp 200v 5a switching characteristics
Abstract: pnp 200v 2SA1250 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.
|
Original
|
2SA1250
-200V
-10mA;
-200V;
pnp 200v 5a switching characteristics
pnp 200v
2SA1250
200v 5a transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: , U na. J 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SA1250 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) • Low Collector Saturatioin Voltage.)= -1.0V(Max.)@ lc= -5A
|
Original
|
2SA1250
-200V
-10mA;
-200V;
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi−Fi Power Amp, Audio Output Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
|
Original
|
NTE92
NTE93
|
PDF
|
NTE92
Abstract: NTE93 NTE93MCP pnp 200v
Text: NTE92 NPN & NTE93 (PNP) Silicon Complementary Transistors Hi–Fi Power Amp, Audio Ourtput Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
|
Original
|
NTE92
NTE93
NTE92
NTE93
NTE93MCP
pnp 200v
|
PDF
|
ZTX956
Abstract: DSA003780
Text: PNP SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX956 ELECTRICAL CHARACTERISTICS at Tamb = 25°C PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) MIN. TYP. MAX. UNIT CONDITIONS. -770 -900 mV IC=-2A, VCE=-5V* Static Forward Current Transfer Ratio
|
Original
|
ZTX956
-100mA,
50MHz
-100mA
100mA,
-10mA,
100ms
ZTX956
DSA003780
|
PDF
|
2SC2607
Abstract: 2SA1116 pnp 200v 5a switching characteristics pnp 200v 5a switching times 2SA1116 equivalent
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
|
Original
|
2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching characteristics
pnp 200v 5a switching times
2SA1116 equivalent
|
PDF
|
2SC2607
Abstract: 2SA1116 pnp 200v 5a switching times 2SA1116 equivalent 200v 5a transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1116 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·High Power Dissipation ·Complement to Type 2SC2607 APPLICATIONS ·Designed for general purpose applications.
|
Original
|
2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
2SA1116
pnp 200v 5a switching times
2SA1116 equivalent
200v 5a transistor
|
PDF
|
2SA651
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA651 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min.) ·Wide Area of Safe Operation APPLICATIONS ·Designed for audio power amplifier applications.
|
Original
|
2SA651
-200V
-25mA;
-200V;
2SA651
|
PDF
|
2SC3857
Abstract: 2SA1493
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3857 APPLICATIONS ·For audio and general purpose applications
|
Original
|
2SA1493
-200V
2SC3857
-200V;
2SC3857
2SA1493
|
PDF
|
2SC2607
Abstract: No abstract text available
Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2SA1116 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min.) • High Power Dissipation
|
Original
|
2SA1116
-200V
2SC2607
-50mA;
-200V;
2SC2607
|
PDF
|
Triac to220
Abstract: Thyristor triac 400v 16a triac 600v 25a TRIAC 25a 600v Triac 3a 600v triac 400v 25a triac 10a 400v thyristor 3a 600v Thyristor to220
Text: Index by Part Number Part number ET013 ET015 ET020 SLA0201 STA203A STA221A TF321M TF321M-A TF321S TF341M TF341M-A TF341S TF361M TF361M-A TF361S TF521M TF521S TF541M TF541S TF541S-A TF561M TF561S TF561S-A TF821M TF821S TF841M TF841S TF861M TF861S TFC561D TFD312S-C
|
Original
|
ET013
ET015
ET020
SLA0201
STA203A
STA221A
TF321M
TF321M-A
TF321S
TF341M
Triac to220
Thyristor
triac 400v 16a
triac 600v 25a
TRIAC 25a 600v
Triac 3a 600v
triac 400v 25a
triac 10a 400v
thyristor 3a 600v
Thyristor to220
|
PDF
|
NTE58
Abstract: NTE59
Text: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
|
Original
|
NTE58
NTE59
NTE58
NTE59
|
PDF
|
|
|
2sa1333
Abstract: No abstract text available
Text: JMnic Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
|
Original
|
2SA1333
MT-200
MT-200)
-25mA
-200V;
2sa1333
|
PDF
|
2SA1250
Abstract: No abstract text available
Text: JMnic Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・High breadown voltage APPLICATIONS ・For general-purpose amplifier ; and switching applications PINNING see Fig.2 PIN
|
Original
|
2SA1250
-10mA
2SA1250
|
PDF
|
2sa1333
Abstract: 2sa133
Text: Inchange Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to
|
Original
|
2SA1333
MT-200
MT-200)
-25mA
-200V;
2sa1333
2sa133
|
PDF
|
2SA1250
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2
|
Original
|
2SA1250
-10mA
2SA1250
|
PDF
|
2SA1250
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SA1250 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·High breadown voltage APPLICATIONS ·For general-purpose amplifier ; and switching applications PINNING see Fig.2
|
Original
|
2SA1250
-10mA
2SA1250
|
PDF
|
2SA1333
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SA1333 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to
|
Original
|
2SA1333
MT-200
MT-200)
-25mA
-200V;
2SA1333
|
PDF
|
2SA1169
Abstract: 2sa116 MT200 package
Text: SavantIC Semiconductor Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION •With MT-200 package ·High power dissipation APPLICATIONS ·Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to
|
Original
|
2SA1169
MT-200
MT-200)
-200V;
2SA1169
2sa116
MT200 package
|
PDF
|
2Sa1169
Abstract: No abstract text available
Text: JMnic Product Specification 2SA1169 Silicon PNP Power Transistors DESCRIPTION ・With MT-200 package ・High power dissipation APPLICATIONS ・Audio and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base
|
Original
|
2SA1169
MT-200
MT-200)
-200V;
2Sa1169
|
PDF
|
philips BDV64A
Abstract: T1P121 BDV66A PHILIPS SEMICONDUCTOR bdv65a philips 200v 4A pnp BDV65 PHILIPS SEMICONDUCTOR philips TIP147 B0646 B0648 BU807 PHILIPS SEMICONDUCTOR
Text: N AflER P H I L I P S / D I S C R E T E E5E D • bb53T31 D O ltiE l? b Hi T-& 1 -3-*? Power Devices 39 LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN TIP110 TIP111 TIP112 BD675 BD677 BD679 BD681 BD683 PNP fC (D C )0 ) V CEO
|
OCR Scan
|
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD675
BD677
BD679
philips BDV64A
T1P121
BDV66A PHILIPS SEMICONDUCTOR
bdv65a philips
200v 4A pnp
BDV65 PHILIPS SEMICONDUCTOR
philips TIP147
B0646
B0648
BU807 PHILIPS SEMICONDUCTOR
|
PDF
|
philips BDV64A
Abstract: BDX67
Text: N AflER P H I L I P S / D I S C R E T E ESE D • bb53T31 DOltjEl? b ■ T - £ 7 -3-? Power Devices LOW VOLTAGE, GENERAL PURPOSE DARLINGTONS in order of current rating TYPE NPN PNP PACKAGE OUTLINE fC (D C )(1) V CE0 MINIMUM hpg at f(* ^ (ty p O a t V C E(s»t)
|
OCR Scan
|
bb53T31
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
O-220AB
BD679
BD681
philips BDV64A
BDX67
|
PDF
|
