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    200V 5A TRANSISTOR Search Results

    200V 5A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation
    ISL70024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation

    200V 5A TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL230D, FSL230R Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FRL230D FRL230H FRL230R 1E14
    Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL230D, FRL230R, FRL230H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 2E12 FRL230D FRL230H FRL230R 1E14

    1E14

    Abstract: 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET
    Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL230D, FRL230R, FRL230H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL230D FRL230H FRL230R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 200V, RDS on = 0.500Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL230D, FRL230R, FRL230H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.500Ω The Fairchild Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both NChannel and P-Channel enhancement types with ratings


    Original     		PDF JANSR2N7275 FRL230R4 1000K

    1E14

    Abstract: 2E12 FRL230R4 JANSR2N7275
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K 1E14 2E12 FRL230R4 JANSR2N7275

    FRL230

    Abstract: 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230
    Text: JANSR2N7275 Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Title ANS N72 Features Description • 5A, 200V, rDS ON = 0.500Ω The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Channel and P-Channel enhancement types with ratings from


    Original     		PDF JANSR2N7275 FRL230R4 1000K FRL230 1E14 2E12 FRL230R4 JANSR2N7275 FRL-230

    1E14

    Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL230D, FSL230R 1E14 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3

    relay 12v 100A

    Abstract: 1E14 2E12 FSL230R4 JANSR2N7396
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7396 FSL230R4 relay 12v 100A 1E14 2E12 FSL230R4 JANSR2N7396

    1E14

    Abstract: 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL230D, FSL230R 1E14 2E12 FSL230D FSL230D1 FSL230D3 FSL230R FSL230R1 FSL230R3

    FZT956

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated FZT956 Green 200V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • • • BVCEO > -200V IC = -2A high Continuous Collector Current IC = -5A Peak Pulse Current


    Original     		PDF FZT956 OT223 -200V -165mV AEC-Q101 OT223 J-STD-020 MIL-STD-202, FZT956 DS36119

    pnp 200v 5a switching characteristics

    Abstract: pnp 200v 2SA1250 200v 5a transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Low Collector Saturatioin Voltage: VCE(sat)= -1.0V(Max.)@ IC= -5A APPLICATIONS ·Designed for general-purpose power switching applications.


    Original     		PDF 2SA1250 -200V -10mA; -200V; pnp 200v 5a switching characteristics pnp 200v 2SA1250 200v 5a transistor

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7275 S m a Formerly FRL230R4 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFET June1998 Description Features • 5A, 200V, r D S O N The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both


    OCR Scan     		PDF FRL230R4 e1998 JANSR2N7275 1000K MIL-STD-750, MIL-S-19500, 500ms;

    diode PJ 65 MG

    Abstract: 5a 12v regula
    Text: 33 FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, rDS 0N = 0.460i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF 460i2 FSL230D, FSL230R MIL-STD-750, MIL-S-19500, 500ms; diode PJ 65 MG 5a 12v regula

    Untitled

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 5A, 200V, ros ON = 0-460S2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL230D, FSL230R 0-460S2 36MeV/mg/cm2 O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: FSL923A0D, FSL923A0R f f X R R /S Data Sheet 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999 File Num ber 4359.2 Features • 5A, -200V, rQg ONi = 0.670J2 • Total Dose The Discrete Products Operation of Harris has developed a


    OCR Scan     		PDF FSL923A0D, FSL923A0R -200V, 670J2 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL230D, FRL230R, FRL230H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL230D, FRL230R, FRL230H O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: FSL923AOD, FSL923AOR H A R R IS S E M I C O N D U C T O R 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 5A, -200V, ro s O N = 0.670Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened M O SFETs


    OCR Scan     		PDF -200V, FSL923AOD, FSL923AOR 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, -160V, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSL923AOD, FSL923AOR 5A, -200V, 0.670 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 5A, -200V, ros ON = 0-670Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSL923AOD, FSL923AOR -200V, O-205AF 254mm)

    632-S

    Abstract: No abstract text available
    Text: fn H a r r i s U U FRL230D, FRL230R, S E M I C O N D U C T O R F R IL 2 3 H 5A, 200V, 0.500 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 200V, RDS on = 0.500Q TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRL230D, FRL230R, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 632UIS B32PH0T0 632-S

    RURP1510

    Abstract: MUR1510
    Text: MUR1510, MURI515, MUR1520, RURP1510, RURP1515, RURP1520 Semiconductor 1 5A, 100V - 200V Ultrafast Diodes April 1995 Package Features • Ultrafast with Soft Recovery Characteristic tRR < 30ns JEDEC TQ-220AC ANODE • +175°C Rated Junction Temperature • Reverse Voltage Up to 200V


    OCR Scan     		PDF MUR1510, MURI515, MUR1520, RURP1510, RURP1515, RURP1520 TQ-220AC MUR1515, MUR1520 RURP1510 MUR1510

    diode 1000V 10a

    Abstract: 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV
    Text: Power Devices High Speed, M edium Voltage Transistors in o r d e r o f c u rr e n t rating VCE (sat) max. at le max. at Iq Package Outline •cfDO*1* v CBO v CEO BU 406 BU407 TO-220AB 7A 400V 300V 200V 100V 1V at 5A 750ns at 5A BUV28 BUV28A TO-220AB 12A


    OCR Scan     		PDF O-220AB O-220AB 750ns BU407 BUV28 BUV28A BUV27 BUV27A diode 1000V 10a 200v 1.5v 3a diode TO-220aB 11A diode 6A 1000v DIODE 2A 400V TO-220aB rr 4045AV