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    200V TRANSISTOR NPN 5A Search Results

    200V TRANSISTOR NPN 5A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    200V TRANSISTOR NPN 5A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2549 NTE2549

    NTE2549

    Abstract: No abstract text available
    Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2549 NTE2549

    2SC6011A

    Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS


    Original     		PDF 2SC6011/A -2SC6011 -2SC6011A 2SA2151/A 2SC6011 2SC6011A Pow011 2SC6011A 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz

    NTE2578

    Abstract: No abstract text available
    Text: NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2578 400mA 500mA, NTE2578

    BUW87A

    Abstract: No abstract text available
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW87A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers.


    Original     		PDF BUW87A BUW87A

    2SD1154

    Abstract: horizontal transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set.


    Original     		PDF 2SD1154 2SD1154 horizontal transistor

    Untitled

    Abstract: No abstract text available
    Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2307

    BUX41

    Abstract: NPN Transistor 8A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX41 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for high speed, high current, high power


    Original     		PDF BUX41 BUX41 NPN Transistor 8A

    NTE2307

    Abstract: No abstract text available
    Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


    Original     		PDF NTE2307 NTE2307

    Untitled

    Abstract: No abstract text available
    Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the


    Original     		PDF ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541

    ZXTN19100CFF

    Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
    Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the


    Original     		PDF ZXTN19100CFF OT23F, ZXTP19100CFF OT23F D-81541 ZXTN19100CFF TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN

    25C1252

    Abstract: TE 8802
    Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A


    Original     		PDF 2SC3834 Pulse14) 100max 120min 30typ 110typ MT-25 25C1252 TE 8802

    2SC3857

    Abstract: 2SA1493 DSA0016508
    Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 •Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB


    Original     		PDF 2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 250typ 2SC3857 2SA1493 DSA0016508

    2SC3856

    Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 2SA1492 2SA1492 2SC3856 DSA0016508

    2SA1909

    Abstract: 2SC5101
    Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose 2SC5101 Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC5101 2SA1909) FM100 10max 140min 50min 20typ 250typ 2SA1909 2SC5101

    2SC3857

    Abstract: 2SA1493
    Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 Symbol Conditions 2SC3857 Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V 24.4±0.2 VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat)


    Original     		PDF 2SC3857 2SA1493) MT-200 100max 200min 50min 20typ 2SC3857 2SA1493

    2SC4388

    Abstract: NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673
    Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673

    2SC4388

    Abstract: 2SA1673 33 NK 100
    Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 Unit V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A


    Original     		PDF 2SC4388 2SA1673) FM100 10max 180min 50min 20typ 300typ 2SC4388 2SA1673 33 NK 100

    2SC3856

    Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492
    Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A


    Original     		PDF 2SC3856 2SA1492) MT-100 100max 180min 50min 20typ 300typ 2SC3856 transistor 2sc3856 power transistor 2sc3856 2SA1492

    2SC3858

    Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A


    Original     		PDF 2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508

    transistor 2sc3858

    Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)


    Original     		PDF 2SC3858 2SA1494) 100max 200min MT-200 50min 20typ transistor 2sc3858 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area

    powertech

    Abstract: 200v 5a transistor
    Text: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current


    OCR Scan     		PDF PT-7509 PT-7509 200mA, 100KHz FT-7509 powertech 200v 5a transistor

    Untitled

    Abstract: No abstract text available
    Text: 100 AMPERES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON NPN TRANSISTOR SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current •CM* D. C. Collector Current Power Dissipation at 25°C Case Temperature


    OCR Scan     		PDF PT-3520

    Untitled

    Abstract: No abstract text available
    Text: "BIG IDEAS IN BIS POWER |A MR PowerTecn lO O A M P E R E S PT*3520 ULTRA FAST SW ITCHING SILICON NPN TRANSISTOR ABSOLUTE M A X IM U M RATINGS SYM BO L PT-3520 Collector-Base Voltage vceo 300V C ollector-Em itter Voltage VCEO 200V E m itter Base Voltage VEBO


    OCR Scan     		PDF PT-3520 -100A 20OVr