Untitled
Abstract: No abstract text available
Text: Product Review RPFow& erWR S m 15 8 o-.fr2 et5 rM H V/-hH FU z/FH2F00W MFJ offer the best RF Power & SWR meter for 1.8-525Mhz - HF / VHF / UHF 200W. This awesome product currently in stocks, you can get this Electronics now for only $133.44. New More Information»
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8-525Mhz
525Mhz
SO-239
12Vdc
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Untitled
Abstract: No abstract text available
Text: A ACD0900S3C VHF/UHF CATV/TV Tuner Downconverter Advanced Product Information FEATURES Integrated Monolithic Downconverter 8 dB Noise Figure 10 dB Conversion Gain High Linearity Small Size Low Cost High Reliability DESCRIPTION The ACD0900 MMIC is a high performance downconverter
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ACD0900
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM30512CW50 TECHNOLOGIES, INC. Broadband RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM30512CW50 is designed for VHF/UHF-Band systems operating over the frequency band 30-512 MHz under CW conditions. Over the
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IDM30512CW50
IDM30512CW50
30-512MHz
400MHz.
2x100mA
IDM30512CW50-REV-NC-DS-REV-NC
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"RF MOSFET" 300W
Abstract: transistor tl 187 "RF MOSFETs" RF POWER MOSFET IXZ1210N50L 200W vhf "RF MOSFET" class d 200w IXZ12210N50L mosfet class ab rf
Text: IXZ12210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 125V operating
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IXZ12210N50L
175MHz
175MHz
IXZ1210N50L
dsIXZ12210N50L
"RF MOSFET" 300W
transistor tl 187
"RF MOSFETs"
RF POWER MOSFET
200W vhf
"RF MOSFET"
class d 200w
IXZ12210N50L
mosfet class ab rf
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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Pallet VHF Power Amplifier
Abstract: BLF578 BLF578 fm band Pallet VHF Power Amplifier TELEVISION blf574 BLF571 BLA6H1214-500 1200w power amplifier LDMOS DVB-T transistors power combiner 4 watt VHF
Text: RF Power Presentation Broadcast ISM , Microwave and Cellular Richard Marlow: European Regional Marketing February 2009 Microwave, Broadcast & ISM Markets Broadcast (TV and radio transmission) – – – – – NXP has a long history (as Philips) and excellent reputation in the market
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BLF87x/88x)
BLF57x)
IS-95
BLF6G38S-25
OT608B
BLF6G38-25
OT608A
BLF6G38-10
Pallet VHF Power Amplifier
BLF578
BLF578 fm band
Pallet VHF Power Amplifier TELEVISION
blf574
BLF571
BLA6H1214-500
1200w power amplifier
LDMOS DVB-T transistors
power combiner 4 watt VHF
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rf power mosfet
Abstract: mosfet class ab rf IXZ215N12L "RF MOSFET" 300W 200W vhf 300w mosfet
Text: IXZ215N12L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOS TM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications PRELIMINARY Symbol Test Conditions Maximum Ratings
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IXZ215N12L
175MHz
rf power mosfet
mosfet class ab rf
IXZ215N12L
"RF MOSFET" 300W
200W vhf
300w mosfet
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CLC5506
Abstract: CLC5506IM CLC5506IMX CLC5506PCASM CLC5956 M14A SOIC-14 DIGITAL IF RECEIVER
Text: CLC5506 Gain Trim Amplifier GTA General Description The CLC5506 is a low-noise amplifier with programmable gain for use in cellular base stations, WLL, radar and IF subsystems where gain-control is required to increase the dynamic range. The CLC5506 allows designers to
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CLC5506
CLC5506
CLC5506IM
CLC5506IMX
CLC5506PCASM
CLC5956
M14A
SOIC-14
DIGITAL IF RECEIVER
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Untitled
Abstract: No abstract text available
Text: Part Number: Integra IDM500CW200 TECHNOLOGIES, INC. UHF-Band RF Power MOSFET Silicon MOSFET − High Power Gain − Superior thermal stability The high power transistor part number IDM500CW200 is designed for VHF/UHF-Band systems operating at 1-500 MHz. Operating at CW
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IDM500CW200
IDM500CW200
2x100mA
IDM500CW200-REV-NC-DS-REV-C
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Anadigics MMIC Downconverter
Abstract: 1SV245 ACD0900
Text: ACD0900 VHF/UHF CATV/TV Tuner Downconverter Data Sheet - Rev 2.1 FEATURES Integrated Monolithic Downconverter 8 dB Noise Figure 10 dB Conversion Gain High Linearity Small Size Low Cost High Reliability S3 Package Modified 16 Pin SOIC PRODUCT DESCRIPTION
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ACD0900
ACD0900
Anadigics MMIC Downconverter
1SV245
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Untitled
Abstract: No abstract text available
Text: GAMEWELL-FCI 12 Clintonville Road, Northford, CT 06472-1610 USA • Tel: 203 484-7161 • Fax: (203) 484-7118 Specifications are for information only, are not intended for installation purposes, and are subject to change without notice. No responsibility is assumed by Gamewell-FCI for their use.
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GF12004
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mosfet 4702
Abstract: IXZ2210N50L IXZ210N50L S 8050 d 331 transistor dv 7812 9974 mosfet 9540 mosfet 78724 78105 MJ 7364
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
mosfet 4702
IXZ2210N50L
S 8050 d 331 transistor
dv 7812
9974 mosfet
9540 mosfet
78724
78105
MJ 7364
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IXZ2210N50L
Abstract: IXz210n50l "RF MOSFET" 300W mosfet 4702 9540 mosfet IXYS RF
Text: IXZ210N50L & IXZ2210N50L RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation Ideal for Class AB & C, Broadcast & Communications Applications VDSS = 500 V ID25 = 10 A 150V operating
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IXZ210N50L
IXZ2210N50L
175MHz
175MHz
IXZ210N50L
dsIXZ210N50L
IXZ2210N50L
"RF MOSFET" 300W
mosfet 4702
9540 mosfet
IXYS RF
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IXZH10N50LA
Abstract: ixzh10n50l IXZH10N50 7310 mosfet mosfet 168.54 IXZ210N50L 78105 ixzh ixzh10n TD 6905
Text: IXZH10N50LA/B RF Power MOSFET N-Channel Enhancement Mode Linear 175MHz RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for Linear Operation in Common Source Mode Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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IXZH10N50LA/B
175MHz
IXZH10N50LB
IXZH10N50LA
dsIXZH10N50LA/B
IXZH10N50LA
ixzh10n50l
IXZH10N50
7310 mosfet
mosfet 168.54
IXZ210N50L
78105
ixzh
ixzh10n
TD 6905
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SD1485
Abstract: 230-MHZ J37 transistor X500mA
Text: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar
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SD1485
SD1485
230-MHZ
J37 transistor
X500mA
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Untitled
Abstract: No abstract text available
Text: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar
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SD1485
SD1485
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SD1485
Abstract: "2-30 mhz"
Text: SD1485 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS Features • • • • • • 170 - 230 MHz 32 VOLTS POUT = 200 WATTS GP = 11.0 dB GAIN MINIMUM INTERNAL INPUT MATCHING COMMON EMITTER CONFIGURATION DESCRIPTION: The SD1485 is a gold metallized epitaxial silicon NPN planar
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SD1485
SD1485
"2-30 mhz"
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PBIT2119
Abstract: MTBF fit IGBT 1200 powerbox
Text: S TA N D A R D P O W E R S U P P L I E S & C U S T O M I S E D S O L U T I O N S POWERING PROGRESS The Powerbox Group S TA N D A R D The Powerbox Group Established in 1974 the Powerbox Group has successfully grown to be one of Europe’s leading suppliers
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ES-08902
ES-28027
SE-646
PBIT2119
MTBF fit IGBT 1200
powerbox
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MHP20S-100F
Abstract: No abstract text available
Text: 20W TO126 High Power Resistors MHP 20 S • Non-Inductive, Small, 20 Watt high power resistor. · TO-126 style package offering a very low thermal resistance of 5.9 °C/W. · Complete thermal flow design available for easy implementation. · Superior vibration durability.
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O-126
0R100
MHP20S-100F
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200W PUSH-PULL
Abstract: BAL0102-150 200w Transistor
Text: GAE GREAT AMERICAN ELECTROINCS BAL0102-150 Silicon NPN high power VHF transistor BAL0102-150 transistor assembly is designed for wideband push-pull power amplifiers required in AM or FM communication equipment (100-200 Mhz frequency range). Output Power:
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BAL0102-150
OT-161
002c1
200W PUSH-PULL
BAL0102-150
200w Transistor
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2sc2652
Abstract: 2SC2640 2SC2642 2SC2643
Text: - 1 9 0 - A ifliS ig ft ^ — as a j i » & : vhf w ji# * 2 Vc e o V 17 am V e b o (V) 4 I c (A) 6 C ob (p F) i f t * 2 8 f (Vcc= 12 .5V , f=175M H z) P c(W )* 70 Tj (°C) 175 iT ,. > ic cn 2 S C 2 6 4 1 f f f i * : DHF(400MHz) s s w ) iiitl V c e o (V)
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2SC2640
175MHz.
7J25W
470MHz,
J200W
28MHz,
100mA
2sc2652
2SC2640
2SC2642
2SC2643
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2SA1138
Abstract: 2SC2673 2sc2681 2SA1020 200W vhf 2SC2676 2SC2644 2SC2637 2SC2638 2SC2640
Text: - 130 - X Ta=25Tlt *EP(àTc=25tï 32 2SC2636 2SC2637 & ft £ m m 2SC2638 2SC2639 2SC2640 2SC2641 ïRS scs 2SC2643 2SC2647 2SC2652 M3Í m VCBO VcEO ic(DC) Pc Pc* ICBO lf (V) (V) (A) m m (iiA) (V) vntäx) 30 20 0.05 300 300 0.1 15 35 17 2 15 VHF PA 35 17 3.5
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2SC2636
2SC2637
2SC2638
2SC2639
2SC2640
2SC2641
400MHz
2SC2642
2SC2643
2SA1138
2SC2673
2sc2681
2SA1020
200W vhf
2SC2676
2SC2644
2SC2640
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Thyristor Xo 602 MA
Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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