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    Abstract: No abstract text available
    Text: MKE 11R600DCGFC ID25 = 15 A VDSS = 600 V RDS on max = 0.165 CoolMOS 1) Power MOSFET with SiC Diode Boost topology ISOPLUS i4™ 3 Electrically isolated back surface 2500 V electrical isolation SiC D 4 1  1 E72873 T 2 Features MOSFET T Symbol Conditions


    Original     		PDF 11R600DCGFC E72873 20100920a

    MKE11R600DCGFC

    Abstract: E72873 12 mke
    Text: MKE 11R600DCGFC CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω with SiC Diode Boost topology Electrically isolated back surface 2500 V electrical isolation ISOPLUS i4™ 3 SiC D 4 1  1 T 2 Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 11R600DCGFC 00DCGFC 20100920a MKE11R600DCGFC E72873 12 mke