Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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Original
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101H1200EH
MIEB101H1200EH
E72873
S1600
20110615a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage
|
Original
|
101H1200EH
MIEB101H1200EH
E72873
20110615a
|
PDF
|