Q9-001
Abstract: ISO 9001
Text: Integrated Silicon Solution, Inc. ISSI 1940 Zanker Road, San Jose, CA 95112, USA Corporate Registration Includes: Integrated Silicon Solution, Inc. (Shanghai) No. 12-13, Lane 647, Songtao Road, Zhangjiang Hi-Tech Park Pudong New Area, Shanghai, 201203, China
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Q90on.
A12962
Q9-001
ISO 9001
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"vlsi technology" abstract
Abstract: "vlsi technology" abstract for split-gate flash
Text: Endurance Characteristics of SuperFlash Memory Xian Liu*, Viktor Markov, Alexander Kotov, Tho Ngoc Dang, Amitay Levi Silicon Storage Technology, Inc., 1171 Sonora Court, Sunnyvale, CA94086, USA Ian Yue, Andy Wang, and Rodger Qian SST China, Ltd., Bldg. 24, No.115, Lane 572, Bibo Road, Zhangjiang Hi-Tech Park, Shanghai, 201203, P.R. China
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CA94086,
"vlsi technology" abstract
"vlsi technology" abstract for
split-gate flash
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION FOR APPROVAL PAGE: 1 REF : 20120323-C PROD. NAME SHIELDED SMD POWER INDUCTOR ABC'S DWG NO. SS1005□□□□L□-□□□ ABC'S ITEM NO. A B C D E F G H I A 101 Ⅰ﹒CONFIGURATION & DIMENSIONS： Marking Inductance Code C B F D H D m/m m/m
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20120323-C
SS1005â
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MIPSTZ2012D2R2
Abstract: MIPSTZ2012D
Text: CD-TCE074-201203 Multi-layer Power Inductor : MIPSTZ2012D series Low Profile Type Features • 2.0x1.25 mm and 0.8 mm in height (small and low profie): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class
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CD-TCE074-201203
MIPSTZ2012D
MIPSTZ2520
TZ2012D3R3
TZ2012D2R2
TZ2012D1R5
TZ2012D1R0
TZ2012D0R5
MIPSTZ2012D2R2
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Untitled
Abstract: No abstract text available
Text: DG-201203-1 062 Densitron Technologies plc A8064 ISO 9001
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DG-201203-1
A8064
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MIPSZ2520D2R2
Abstract: MIPSZ2520D2R2H
Text: CD-TCE071-201203 Multi-layer Power Inductor : MIPSZ2520D series High current Type Features • 2.5x2.0 mm and 1.0 mm in height (compact size): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class
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CD-TCE071-201203
MIPSZ2520D
MIPSZ2520D2R2H
MIPSZ2520D2R2
MIPSZ2520D1R5
MIPSZ2520D1R0
MIPSZ2520D0R5
MIPSZ2520D2R2H
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MIPF2016D4R7
Abstract: MIPF2016D2R2 MIPF2016D1R5 MIPF2016D3R3 mipf2016d4 MIPF2016
Text: CD-TCE066-201203 Multi-layer Power Inductor : MIPF2016series Very Small Type Features • 2.0x1.6 mm and 1 mm in height (very compact size): CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class • High speed mounting: Using SMT mounter makes less than a
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CD-TCE066-201203
MIPF2016series
MIPF2016D4R7
MIPF2016D3R3
MIPF2016D2R2
MIPF2016D1R5
MIPF2016D2R2
MIPF2016D4R7
MIPF2016D1R5
MIPF2016D3R3
mipf2016d4
MIPF2016
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CD-TCE072-201203
Abstract: No abstract text available
Text: CD-TCE072-201203 Multi-layer Power Inductor : MIPSUZ2012Dseries Very Small and Very Low Profile Type Features • 2.0x1.25 mm and 0.5 mm in height (very compact size : CAE and fine printing technology made this compact size possible • Stable minimum DC resistance in the class
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CD-TCE072-201203
MIPSUZ2012Dseries
MIPSUZ2012D
2012D1R0
2012D0R5
CD-TCE072-201203
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MIPSAZ3225D
Abstract: MIPSAZ3225D1R5 MIPSAZ3225D2R2 MIPSAZ3225D0R5 MIPSAZ3225D0R2
Text: CD-TCE075-201203 Multi-layer Power Inductor : MIPSAZ3225D series High current Type Features • 3.2x2.5 mm and 1.2 mm in height (compact size): CAE and fine printing technology made this compact size possible • Extremely low DC resistance in the class
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CD-TCE075-201203
MIPSAZ3225D
MIPSAZ3225D2R2
MIPSAZ3225D1R5
MIPSAZ3225D1R0
MIPSAZ3225D0R2
MIPSAZ3225D0R5
MIPSAZ3225D0R2
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Untitled
Abstract: No abstract text available
Text: CUS08F30 Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit
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CUS08F30
OD-323
SC-76
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Untitled
Abstract: No abstract text available
Text: CUS521 Schottky Barrier Diode Silicon Epitaxial CUS521 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.5 V (max) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit
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CUS521
OD-323
SC-76
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TLP290-4
Abstract: 11-11F1
Text: TLP290-4 Photocouplers GaAs Infrared LED & Photo Transistor TLP290-4 1. Applications • Programmable Logic Controllers PLCs • Switching Power Supplies • Simplex/Multiplex Data Transmission 2. General The Toshiba TLP290-4 consists of phototransistors optically coupled to gallium arsenide infrared emitting diodes.
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TLP290-4
TLP290-4
11-11F1
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hsop28 layout
Abstract: TB62214AFG IMX 140 TB62214 Toshiba HSOP28
Text: TB62214AFG/AFTG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TB62214AFG, TB62214AFTG BiCD Constant-Current Two-Phase Bipolar Stepping Motor Driver IC The TB62214AFG/AFTG is a two-phase bipolar stepping motor driver using a PWM chopper controlled by clock input.
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TB62214AFG/AFTG
TB62214AFG,
TB62214AFTG
TB62214AFG/AFTG
TB62214AFG
hsop28 layout
TB62214AFG
IMX 140
TB62214
Toshiba HSOP28
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Untitled
Abstract: No abstract text available
Text: TLP3375 Photocouplers Photorelay TLP3375 1. Applications • High-Speed Memory Testers • High-Speed Logic IC Testers • Radio-Frequency Measuring Instruments • ATE Automatic Test Equipment 2. General The TLP3375 photorelay consists of a photo MOSFET optically coupled to an infrared light emitting diode. It is
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TLP3375
TLP3375
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Untitled
Abstract: No abstract text available
Text: TK4P60DA MOSFETs Silicon N-Channel MOS π-MOS TK4P60DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.7 Ω (typ.) (VGS = 10 V) (2) High forward transfer admittance: |Yfs| = 2.2 S (typ.) (3)
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TK4P60DA
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LM 858 IC chip
Abstract: Q65111A3098
Text: 6-lead in-line MULTILED Enhanced optical Power LED ThinFilm / ThinGaN Lead (Pb) Free Product - RoHS Compliant LRTB GFUG Released Besondere Merkmale • Gehäusetyp: schwarzes P-LCC-6 Gehäuse zur Kontrasterhöhung (RGB-Displays) und diffuser Silikon-Verguß
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D-93055
LM 858 IC chip
Q65111A3098
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VLF3014AT1R0N1R7
Abstract: VLF3014 ET-7200 VLF3014AT-1R0N1R7 30x2 VLF5010 0033g VLF3025 VLF302510 VLF5014AT100MR9
Text: Inductors for Power Circuits Wound/STD • magnetic shielded VLF series Type: VLF3014A 2.6x2.8 mm VLF302510MT (3.0x2.5 mm) VLF302512MT (3.0x2.5 mm) VLF4012A (3.5x3.7 mm) VLF4014A (3.5x3.7 mm) VLF5010A-2 (4.5x4.7 mm) VLF5012A (4.5x4.7 mm) VLF5014A (4.5x4.7 mm)
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VLF3014A
VLF302510MT
VLF302512MT
VLF4012A
VLF4014A
VLF5010A-2
VLF5012A
VLF5014A
2002/95/EC,
VLF3014AT1R0N1R7
VLF3014
ET-7200
VLF3014AT-1R0N1R7
30x2
VLF5010
0033g
VLF3025
VLF302510
VLF5014AT100MR9
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AN10876
Abstract: varistor 275 AN-1104 SSL2109AT AN1104 SSL2109 SSL2109A BYV25
Text: SSL2109 series GreenChip controller for LED lighting Rev. 3 — 4 June 2012 Product data sheet 1. General description The SSL2109 series is a range of high-voltage Integrated Circuits IC for driving LED lamps in general lighting applications. The main benefits of this IC include:
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SSL2109
SSL2108
AN10876
varistor 275
AN-1104
SSL2109AT
AN1104
SSL2109A
BYV25
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Japanese Transistor Data Book
Abstract: No abstract text available
Text: Doc No. TT4-EA-14130 Revision . 2 Product Standards Bipolar Transistor DSAF00100L DSAF00100L Silicon PNP epitaxial planar type Unit: mm For general amplification Complementary to DSCF001 DSA3001 in ML3 type package 0.6 3 • Features 1.0 High forward current transfer ratio hFE with excellent linearity
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TT4-EA-14130
DSAF00100L
DSCF001
DSA3001
UL-94
Japanese Transistor Data Book
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14124 Revision. 2 Product Standards Schottky Barrier Diode DB2W40200L DB2W40200L Silicon epitaxial planar type Unit: mm 1.6 For rectification 0.13 2 • Features 2.6 3.5 Low forward voltage VF Forward current Average IF(AV) = 2 A rectification is possible
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TT4-EA-14124
DB2W40200L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14152 Revision. 4 Product Standards Zener Diode DE2704700L DE2704700L Silicon epitaxial planar type Unit: mm 0.6 For ESD protection 0.13 2 • Features 1.0 1.4 High ESD Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant
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TT4-EA-14152
DE2704700L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14156 Revision. 5 Product Standards Zener Diode DE2703600L DE2703600L Silicon epitaxial planar type Unit: mm For ESD protection DE2S036 in SSSMini2 type package 0.6 0.13 2 • Features 1.0 1.4 High ESD Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL:Level 1 compliant
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TT4-EA-14156
DE2703600L
DE2S036
UL-94
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Untitled
Abstract: No abstract text available
Text: Hyper Mini TOPLED Hyper-Bright LED Lead Pb Free Product - RoHS Compliant LB M673, LT M673 Released Besondere Merkmale • Gehäusetyp: weißes SMT Gehäuse, farbloser klarer Verguss • Besonderheit des Bauteils: kleine Bauform für Anwendungen mit wenig Platzbedarf
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3000/Rolle,
12000/Rolle,
JESD22-A114-D
D-93055
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GPLY6880
Abstract: sideled OHF04132
Text: IR-Lumineszenzdiode 850 nm mit hoher Ausgangsleistung High Power Infrared Emitter (850 nm) Lead (Pb) Free Product - RoHS Compliant SFH 4255 gemäß OS-PCN-2009-021-A2 acc. to OS-PCN-2009-021-A2 Wesentliche Merkmale Features • Infrarot LED mit sehr hoher Ausgangsleistung
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OS-PCN-2009-021-A2
OS-PCN-2009-021-A2
GPLY6880
sideled
OHF04132
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