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    2013S Price and Stock

    NKK Switches M2013SD3W01

    SWITCH TOGGLE SPDT 6A 125V
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    DigiKey M2013SD3W01 Bulk 277 1
    • 1 $6.68
    • 10 $5.764
    • 100 $4.9717
    • 1000 $4.68676
    • 10000 $4.68676
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    Newark M2013SD3W01 Bulk 1
    • 1 $8.91
    • 10 $8.56
    • 100 $7
    • 1000 $5.18
    • 10000 $5.18
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    RS M2013SD3W01 Bulk 32 10 Weeks 1
    • 1 $7.15
    • 10 $6.08
    • 100 $5.07
    • 1000 $5.07
    • 10000 $5.07
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    TTI M2013SD3W01 Bulk 258 1
    • 1 $6.25
    • 10 $6.25
    • 100 $6.25
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    NKK Switches M2013SA2G30

    SWITCH TOGGLE SPDT 0.4VA 28V
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    DigiKey M2013SA2G30 Bulk 250 1
    • 1 $6.34
    • 10 $5.473
    • 100 $4.7214
    • 1000 $4.45088
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    NKK Switches M2013S3S1G06

    SWITCH TOGGLE SPDT 0.4VA 28V
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    DigiKey M2013S3S1G06 Bulk 88 1
    • 1 $7.93
    • 10 $6.842
    • 100 $6.1704
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    NKK Switches M2013S2A2W13

    SWITCH TOGGLE SPDT 6A 125V
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    DigiKey M2013S2A2W13 Box 75 1
    • 1 $5.71
    • 10 $4.926
    • 100 $4.4426
    • 1000 $4.4426
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    TTI M2013S2A2W13 Bulk 50 1
    • 1 $5.85
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    NKK Switches M2013SS1G45

    SWITCH TOGGLE SPDT 0.4VA 28V
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    DigiKey M2013SS1G45 Bulk 64 1
    • 1 $8.75
    • 10 $7.553
    • 100 $6.8112
    • 1000 $6.8112
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    TTI M2013SS1G45 Bulk 5 1
    • 1 $9.31
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    2013S Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2013S Tecate Industries POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND Original PDF
    2013S-1K0/103K22F Tecate Industries POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND Original PDF
    2013-ST Curtis Industries Terminal Blocks - Barrier Blocks, Connectors, Interconnects, TERM BLOCK BARRIER DBL SLDR Original PDF

    2013S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VJ HIFREQ

    Abstract: WSBM8518
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 Proximity Sensor with I2C Interface WSBM8518 Power Metal Strip Battery Shunt Resistor with Molded Enclosure


    Original     		PDF com/ref/2013s12 VCNL3020 WSBM8518 IHLP-6767GZ-5A VMN-MS6782-1302 VJ HIFREQ WSBM8518

    Untitled

    Abstract: No abstract text available
    Text: POLYPROPYLENE CAPACITOR TYPE 2013S EXTENDED FOIL, FLAME RETARDANT EPOXY COATED, PULSE APPLICATION GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -40°C to 85°C 2. VOLTAGE RANGE: 1000 and 1500 to 2000 VDC. 3. CAPACITANCE RANGE: range: .001 to 0.047 Mfd. tolerance: ± 3%, ± 5%, and ±10%


    Original     		PDF 2013S 914-250/104K10B1/5 914-250/104K10B5/5

    Untitled

    Abstract: No abstract text available
    Text: POLYPROPYLENE CAPACITOR TYPE 2013S EXTENDED FOIL, FLAME RETARDANT EPOXY COATED, PULSE APPLICATION GENERAL SPECIFICATION 1. OPERATING TEMPERATURE: -40°C to 85°C 2. VOLTAGE RANGE: 1000 and 1500 to 2000 VDC. 3. CAPACITANCE RANGE: range: .001 to 0.047 Mfd. tolerance: ± 3%, ± 5%, and ±10%


    Original     		PDF 2013S

    2013S

    Abstract: DO 350
    Text: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION TYPE 2013S SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C. 1000 & 1500VDC ~ 2000VDC.


    Original     		PDF 2013S 1500VDC 2000VDC. 100KHz, 2013S DO 350

    2013S

    Abstract: No abstract text available
    Text: Tecate Group POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION TYPE 2013S SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C. 1000 & 1500VDC ~ 2000VDC.


    Original     		PDF 2013S 1500VDC 2000VDC. 100KHz, 2013S

    WSBM8518

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products 2013 www.vishay.com/ref/2013s12 S12 S12 Super 12 Featured Products Table of Contents VCNL3020 I2Cインターフェース付き近接センサー WSBM8518 1 2 モールドケース付きPower Metal Strip


    Original     		PDF com/ref/2013s12 VCNL3020 WSBM8518 IHLP-6767GZ-5A VMN-MS6790 WSBM8518

    Untitled

    Abstract: No abstract text available
    Text: Tecate Group Film Capacitors POLYPROPYLENE FILM & FOIL RADIAL EPOXY DIP, SERIES WOUND TYPE 2013S POLYPROPYLENE OPP , EXTENDED FOIL, EPOXY COATED, PULSE APPLICATION SPECIFICATIONS Performance Characteristics Operating Temperature Range Voltage Range -40°C ~ +85°C.


    Original     		PDF 2013S 1500VDC 2000VDC. 100KHz, 2000WVDC

    Untitled

    Abstract: No abstract text available
    Text: MOTION CONTROLLER FOR STEPPER MOTORS INTEGRATED CIRCUITS TMC4210 DATASHEET Low cost 1-Axis Stepper Motor Controller for TMC26x and TMC389 Stepper Driver SPI Communication Interface for Microcontroller and Step/Direction interface to Driver APPLICATIONS CCTV, Security


    Original     		PDF TMC4210 TMC26x TMC389 SSOP16, 635mm TMC429 2660-EVAL]

    transistor j241

    Abstract: aft18P350-4 x3c19p1 j485 transistor j449 j448
    Text: Freescale Semiconductor Technical Data Document Number: AFT18P350-4S2L Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of


    Original     		PDF AFT18P350--4S2L AFT18P350-4S2LR6 DataAFT18P350--4S2L 4/2013Semiconductor, transistor j241 aft18P350-4 x3c19p1 j485 transistor j449 j448

    Untitled

    Abstract: No abstract text available
    Text: Audio Transformer MIL-T-27E High Reliability : “Red Spec” Series SP- 42 Description: Triad’s high reliability audio transformers provide the durability and precision required in today’s demanding designs. These transformers are available for a wide variety of


    Original     		PDF MIL-T-27E 150VDC 2011/65/EU, 2013s SP-42 TF5S21ZZ

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base


    Original     		PDF MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3

    j295

    Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606
    Text: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage


    Original     		PDF MD7IC2012N MD7IC2012NR1 MD7IC2012GNR1 j295 SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606

    Untitled

    Abstract: No abstract text available
    Text: 50/60 Hz Current Sense Transformers CST-1030 Description: Triad current sense transformers are used to detect the current passing through a conductor. These transformers are very reliable and operate efficiently at 50/60 Hz. Electrical Specifications @25C


    Original     		PDF CST-1030 2011/65/EU, 2013s

    Film Capacitors

    Abstract: 250v 105j capacitor 105j 250v 105j 250v capacitor 105j 1319
    Text: Tecate Group Film Capacitors PART NUMBERING SYSTEM PART NUMBER EXAMPLE MORE EXAMPLES If formed to 5mm L/S: 914-250/104K10B1/5. If cut & formed to 5mm L/S: 914-250/104K10B5/5. If cut & formed to 5mm L/S & 3mm L/L: 914-250/104K10B1/5#1. #1 = one deviation from std ex.: L/L


    Original     		PDF 914-250/104K10B1/5. 914-250/104K10B5/5. 914-250/104K10B1/5 1000pF 4700pF 100000pF 30000Mâ 10000Mâ 92-100/102J3F Film Capacitors 250v 105j capacitor 105j 250v 105j 250v capacitor 105j 1319

    Untitled

    Abstract: No abstract text available
    Text: DEMO MANUAL DC1082A LTC1407A, LTC1403A, LTC1407A-1, LTC1403A-1, LTC2356-14, LTC2355-14, 14-Bit, 3.5Msps/3Msps/2.8Msps SAR ADCs Description Demonstration circuit 1082A features the LTC 1407 family of SAR ADCs. This quick start guide will focus on DC1082A-A which uses the LTC1407A-1, a bipolar,


    Original     		PDF DC1082A LTC1407A, LTC1403A, LTC1407A-1, LTC1403A-1, LTC2356-14, LTC2355-14, 14-Bit, DC1082A-A

    WELWYN c21

    Abstract: No abstract text available
    Text: Document Number: AFT26HW050S Rev. 1, 6/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistors N−Channel Enhancement−Mode Lateral MOSFETs These 9 watt asymmetrical Doherty RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26HW050S AFT26HW050SR3 AFT26HW050GSR3 AFT26H050W26SR3 6/2013Semiconductor, WELWYN c21

    ATC600F470BT250XT

    Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor

    c5750x7s2a106m

    Abstract: AD255A mosfet mttf aft20p06
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060-4NR3 DataAFT20P060--4N 1/2013Semiconductor, c5750x7s2a106m AD255A mosfet mttf aft20p06

    marking dj-u sot-23-5

    Abstract: MIC2000 MIC2003 MIC2013 FD08
    Text: MIC2003/2013 Current Limiting Circuit Protector General Description Features MIC2003 and MIC2013 are high-side current limiting devices, designed for power distribution applications in PCs, PDAs, printers and peripheral devices. MIC2003 and MIC2013 are thermally protected and will


    Original     		PDF MIC2003/2013 MIC2003 MIC2013 M9999-102605 marking dj-u sot-23-5 MIC2000 FD08

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT20P060-4N Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 6.3 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 2170 MHz.


    Original     		PDF AFT20P060--4N AFT20P060 AFT20P060-4NR3 1/2013Semiconductor,

    8029L

    Abstract: MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S
    Text: ICs/LSIs for VCR, Camera • For 8mm VCR O p e ra tin g V o lta g e C a te g o ry V ideo signal p ro c e s s o r A udio signal p ro c e s s o r S erv o c o n tro l F u n c tio n s P ro c e s s T y p e N o. P ackage V N o. M N 6173S 5 CM OS C h ro m a s ig n a l p ro c e s s in g


    OCR Scan     		PDF 6173S SO-18D 6297S 6170AS SO-20D 28-SD -QKH/80-QFH SO-28D 24-SD 8029L MN5128 607p 2254FAP I2132 MN3861SA AN2514S 3861SA 2154F 2514S

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    S5908

    Abstract: 20135G-3
    Text: 4 THIS DRAWING IS UNPUBLISHED. C RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. ,19 LOC ALL RIGHTS RESERVED. -29.01 [1 . 1 42] TYP + 11 99 [ .472] . 4 . 34 [.171] TYP LTR DESCRIPTION DATE K REDRAWN W/0 CHANGE PER EC 0 0 2 0 - 1 2 9 9 - 9 5 04 DEC 95


    OCR Scan     		PDF MIL-M-14, 20135G-3 09MAY94 4-AUG-97 amp40973 e/ssrv026d/dsk04/dept4023/amp40973/edmmod S5908 20135G-3

    csc 5151 a

    Abstract: csc 5151 526h 5623S 614y 823G 615Y 423H 327d 328h
    Text: CHINA SEMICONDUCTOR 2SE » • T~ q-1 - 3 3 SOTTESO DGDDDO1! 0 NUMERIC/ALPHANUMERIC DISPLAY GENERAL INFORMATION Part Number System CS X - A B C D J T CHINA SEMICONDUCTOR PRODUCT S-SINGLE DIGIT D-DUAL DIGIT COLOR CODE R: RED H: BRIGHT RED E: ORANGE RED S: SUPER-BRIGHT RED


    OCR Scan     		PDF q-133 csc 5151 a csc 5151 526h 5623S 614y 823G 615Y 423H 327d 328h