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    2030 TRANSISTOR Search Results

    2030 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2030 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOUSE CIRCUIT

    Abstract: FDN35AP P30 Power MOSFET mosfet xb FDN352AP mosfet yb ADNS2030 ADNS-2030 LM335 Mouse microcontroller
    Text: ADNS-2030 Power Rise Considerations Application Note 5253 Introduction The ADNS-2030 Avago low power optical mouse sensor uses a 3.3V power supply which is suited to cordless mouse applications. In certain applications, the ADNS2030 requires precise power supply rise times to ensure


    Original     		PDF ADNS-2030 ADNS-2030 ADNS2030 5989-4507EN AV02-1537EN MOUSE CIRCUIT FDN35AP P30 Power MOSFET mosfet xb FDN352AP mosfet yb LM335 Mouse microcontroller

    transistor 2030

    Abstract: 2030 transistor potentiometer 1k ohm SP-2030
    Text: Preliminary Product Description SP-2030 Stanford Microdevices offers a high-performance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a


    Original     		PDF SP-2030 -31dBc Ord-56 MMBTA64, OT-23 SP-2030 transistor 2030 2030 transistor potentiometer 1k ohm

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP mosfet b4
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 blo-543-7100 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP mosfet b4

    2W3905

    Abstract: No abstract text available
    Text: KIT ATION EVALU E L B AVAILA 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE ,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 blo6-543-7100 MAX1864/MAX1865 2W3905

    MAX1864

    Abstract: MAX1864TEEE MAX1864UEEE MAX1865 MAX1865TEEP MAX1865UEEP 15DL20
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865 MAX1864TEEE MAX1864UEEE MAX1865TEEP MAX1865UEEP 15DL20

    Untitled

    Abstract: No abstract text available
    Text: 19-2030; Rev 0; 4/01 xDSL/Cable Modem Triple/Quintuple Output Power Supplies Features The MAX1864/MAX1865 power-supply controllers are designed to address cost-conscious applications such as cable modem Consumer Premise Equipment CPE , xDSL CPE, and set-top boxes. Operating off a low-cost,


    Original     		PDF MAX1864/MAX1865 MAX1864 MAX1865 MAX1864/MAX1865

    transistor 2030

    Abstract: 27560
    Text: Input Modules Datasheet WG M IAC Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Output Transistor Input AC + DC Applications Monitoring of electronic load circuits


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Input Modules Datasheet WG M IDC Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Output Transistor Input DC Applications Monitoring of electronic load circuits


    Original     		PDF

    BLD135D

    Abstract: BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D
    Text: 深圳深爱半导体有限公司 Shenzhen SI Semiconductors CO.,Ltd. http://www.sisemi.com.cn sisemi@sisemi.com.cn SI transistors Selection Guide 一Compact fluorescent lamps Energy-Saving Lamps ： BVceo (V) Ic (A) Application（W） TO-92 TO-92 Die Size


    Original     		PDF MJE13001 BUL6821 BUL6822 BUL6822A BUL6823 MJE13003BR O-126 BUL6802 BUL6823A BLD135D BLD128D BUL6802 BLD133D BLD137D bld128 BLD137 bld135 BLD139D BLD123D

    WG-IDC5

    Abstract: No abstract text available
    Text: Input Modules Datasheet WG M IDC Comus International Bvba Overhaamlaan 40 3700 Tongeren, Belgium Phone: +32 12390400 Fax: +32 12235754 Email: info@comus.be www.comus.be Features Output Transistor Input DC Applications Monitoring of electronic load circuits


    Original     		PDF

    utc 2030

    Abstract: marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor
    Text: UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage: VCEO=-80V * Collector Dissipation: PD=350mW 1 2 SOT-23 *Pb-free plating product number: MMBTA56L ORDERING INFORMATION Order Number Normal


    Original     		PDF MMBTA56 350mW OT-23 MMBTA56L MMBTA56-AE3-R MMBTA56L-AE3-R QW-R206-090 utc 2030 marking 2G MMBTA55 MMBTA56 MMBTA56-AE3-R MMBTA56L MMBTA56L-AE3-R 4 1020 transistor

    401J

    Abstract: 4-16 line decoder eprom 27C16 FX2030 FX2030C FX2030Z FX403
    Text: CM L Semiconductor Products Obsolete Product - For Information Only PUBLICATION D/2030/1 MARCH 1983 PRODUCT INFORMATION FX2030C FX2030Z IT. DATA OUT LOW POWER TRANSMIT ENABLE SELECTIVE MUTE R/S & P . T . L . GROUP OISIT SELECT TRANSPOND SELECT CALLING ENCODER/


    OCR Scan     		PDF D/2030/1 FX2030C FX2030Z FX2030 401J 4-16 line decoder eprom 27C16 FX2030C FX2030Z FX403

    Untitled

    Abstract: No abstract text available
    Text: Product Description SP-2030 Stanford M icrodevices offers a high-perform ance LDMOS Transistor designed for base station applications in the 0.5 to 2.8 GHz frequency range. This novel Peak LDMOS has been optimized for high peak to average power in a compact, power flanged ceram ic package. Ideal for CDMA,


    OCR Scan     		PDF SP-2030 -31dBc MMBTA64, OT-23 SP-2030

    F421

    Abstract: IRFF420R IRFF421R IRFF422R IRFF423R nanosecond pulse generator avalanche pulse generator
    Text: Rugged Power MOSFETs_ IRFF420R, IRFF421R, IRFF422R, IRFF423R File Number 2030 Avalanche Energy Rated N-Channel Power MOSFETs 1.4 A a n d 1.6 A , 4 5 0 V -5 0 0 V ros on = 3.00 and 4.00 N-CHANNEL ENHANCEMENT MODE Feature«: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF420R, IRFF421R, IRFF422R, IRFF423R 50V-500V IRFF422R IRFF423R 92CS-42660 F421 IRFF420R IRFF421R nanosecond pulse generator avalanche pulse generator

    triangle wave op amp

    Abstract: TEL LAB Q81 SSM2030 sine shaper sawtooth oscillator circuit with op amp 741 its output LM353 TL082 sawtooth wave op amp oscillator circuit with op amp 741
    Text: SSM 2030 VOLTAGE CONTROLLED OSCILLATOR SSM2030 D ES C R IP TIO N The SSM2030 is a precision voltage controlled oscillator designed specifically to meet the waveform and accuracy requirements o f electronic music systems. It has both exponential and proportional linear sweep inputs w hich can con tro l frequency over a


    OCR Scan     		PDF SSM2030 triangle wave op amp TEL LAB Q81 sine shaper sawtooth oscillator circuit with op amp 741 its output LM353 TL082 sawtooth wave op amp oscillator circuit with op amp 741

    5-tone

    Abstract: 123401
    Text: CIVIL Semiconductor Products Obsolete Product - For Information Only PRODUCT INFORMATION PUBLICATION D/2030/1 MARCH 1983 FX2030C FX2030Z LOW POWER TONE DATA OUT TRANSMIT EHAÔLE SELECTIVE CALLING ENCODER/ MUTE R/'S S P. T. U. ó &CmjP* Ù I6IT Sé lé CT TflAWSPfïNÙ SÉLECT


    OCR Scan     		PDF D/2030/1 FX2030C FX2030Z FX2030 5-tone 123401

    max 1786a

    Abstract: 2SB1120 SANYO 1786A
    Text: SANY O S E M I C O N D U C T O R CORP 22E 1> 7 cH 7 0 7 b OOD71bS 4 T-Z7-/3 2SB1120 % PNP Epitaxial Planar Silicon Transistor 2030 High-Current Driver Applications 1786A Applications . Strobes, voltage regulators, relay drivers, lamp drivers. Features . Low collector-to-emitter saturation volage VcE(sat max=_0,i, v ^


    OCR Scan     		PDF 1707b 00071t 2SB1120 250mm3 max 1786a SANYO 1786A

    information applikation

    Abstract: information applikation mikroelektronik a2030h Halbleiterbauelemente DDR mikroelektronik applikation A2030 VEB mikroelektronik Mikroelektronik Information Applikation "information applikation" "halbleiterwerk frankfurt"
    Text: m ö I k F ^ e le l- c t s n o n ik Information Applikation K»D :z i= ä B lB k c fc 3 n c 3 r iik Information Applikation H e f t : 27 ! Integrierter NF-Verstärker A 2030 H/V veb Halbleiterwerk frankfurt/oder batrSob im veb kcm binat mikroolaktronik Es K A M M E R DER TECHNIK


    OCR Scan     		PDF

    Piezofilter DDR

    Abstract: transistor gt 322 FM -piezofilter service-mitteilungen bauelemente DDR GT322B AM -piezofilter IC 2030 Sonneberg Transistoren DDR
    Text: SERVICE-MITTEILUNGEN r a d i o t e le v is io n ii/A VEB IN DUSTRIEVERTRIEB RUN DFUN K UND FERN SEH EN - AUSGABE: SEITE NOVEMBER 1-1 0 Mitteilung aus dem VEB Kombinat Stern-Radio Berlin / Stammbetrieb Die neue Variante « ST E R N DYNAM IC 2030 Das Angebot an Kofferempfängern der mittleren Preisklasse wird um


    OCR Scan     		PDF III/18/379 Piezofilter DDR transistor gt 322 FM -piezofilter service-mitteilungen bauelemente DDR GT322B AM -piezofilter IC 2030 Sonneberg Transistoren DDR

    Untitled

    Abstract: No abstract text available
    Text: SSDI TRANSISTORS* - THE NPN TRANSISTORS CHIP TYPE INDUSTRY REFERENCE C AMPS hFE b v ceo (VOLTS) ^ 40-450 10-100(50mA,5V) IC’ VCE^ C6E 2N3738,9 0.5 C6T 2N5010-15 0.5 500-lK(CER) 30-180(25mA,10V) 2N5092,5,7 1.0 350-450 10-100(.2A,5V) SPT5502,3 1.0 70.0-800 (CER)


    OCR Scan     		PDF 2N3738 2N5010-15 500-lK 2N5092 SPT5502 SPT6502 2N4300 2N5152 2N4150 2N3996-9

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 lc Collector current. 300A Vcex Collector-emitter vo ltag e 1200V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM300DY-24 E80276 E80271

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE Q M 100DY-2HK lc Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		PDF QM100DY-2HK 100DY-2HK E80276 E80271

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK lc Collector current. 150A Vcex Collector-emitter voltage 1000V hFE DC current gain.750 Insulated Type UL Recognized


    OCR Scan     		PDF QM150DY-2HBK E80276 E80271 transistor eb 2030

    transistor eb 2030

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM200DY-HB HIGH POWER SWITCHING USE INSULATED TYPE QM200DY-HB lc Collector current. 200A Vcex Collector-emitter voltage.600V hFE DC current gain. 750 Insulated Type


    OCR Scan     		PDF QM200DY-HB E80276 E80271 transistor eb 2030