HYB5117400BJ
Abstract: HYB5117400BT hyb5117400
Text: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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Original
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HYB5117400BJ
HYB5117400BT
5117400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
hyb5117400
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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PDF
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MAS 10 RCD
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
MAS 10 RCD
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
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PDF
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17405CJ
Abstract: No abstract text available
Text: VG26 V (S)17405C 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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17405C
26/24-pin
50/60ns
127mm)
025mm)
1G5-0088
17405CJ
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PDF
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smd marking AAAA
Abstract: bt 330 HYB3116400 HYB3117400 400BJ 4Mx4 DRAM
Text: 3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT L -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 -60 -70 tRAC
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Original
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HYB3116400BJ/BT
HYB3117400BJ/BT
HYB3117400BJ/BT-50)
HYB3117400BJ/BT-60)
HYB3117400BJ/BT-70)
400BJ/BT
P-SOJ-26/24-1
GPJ05628
GPX05857
P-TSOPII-26/24-1
smd marking AAAA
bt 330
HYB3116400
HYB3117400
400BJ
4Mx4 DRAM
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PDF
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5117405
Abstract: No abstract text available
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature
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Original
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HYB5116405BJ/BT
HYB5117405BJ/BT
HYB5116405BJ/BT-50)
HYB5116405BJ/BT-60)
HYB5116
405BJ/BT-50/-60/-70
GPJ05628
P-TSOPII-26/24
300mil)
GPX05857
5117405
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PDF
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bt 330
Abstract: HYB3116405 HYB3117405 HYB3117405BJ 4Mx4 DRAM
Text: 3.3V 4M x 4-Bit EDO-Dynamic RAM HYB3116405BJ/BT L -50/-60/-70 HYB3117405BJ/BT(L) -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance -50 -60 -70 tRAC
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Original
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HYB3116405BJ/BT
HYB3117405BJ/BT
HYB3117405BJ/BT-50)
HYB3117405BJ/BT-60)
HYB3117405BJ/BT-70)
405BJ/BT
P-SOJ-26/24-1
GPJ05628
GPX05857
bt 330
HYB3116405
HYB3117405
HYB3117405BJ
4Mx4 DRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405FJ 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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17405FJ
26/24-pin
50/60ns
127mm)
025mm)
1G5-0162
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PDF
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0124
MAS 10 RCD
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PDF
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MAS 10 RCD
Abstract: AD404M42VSA-5 AD404M42VSA-6 AD404M42VTA-5 AD404M42VTA-6 ASCEND Semiconductor
Text: ASCEND Semiconductor 4Mx4 EDO Data sheet Rev.1 Page 1 AD 40 4M 4 2 V S A – 5 Ascend Semiconductor EDO/FPM D-RAMBUS DDRSDRAM DDRSGRAM SGRAM SDRAM : : : : : : 40 41 42 43 46 48 Density 16M : 16 Mega Bits 8M : 8 Mega Bits 4M : 4 Mega Bits 2M : 2 Mega Bits 1M : 1 Mega Bit
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Original
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200MHz
167MHz
143MHz
133MHz
125MHz
100MHz
MAS 10 RCD
AD404M42VSA-5
AD404M42VSA-6
AD404M42VTA-5
AD404M42VTA-6
ASCEND Semiconductor
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PDF
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HYB3117405
Abstract: HYB5116405 HYB5117405 HYB3116405
Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT-50/-60 HYB5117405BJ/BT-50/-60 HYB3116405BJ(L)/BT(L)-50/-60 HYB3117405BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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Original
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HYB5116405BJ/BT-50/-60
HYB5117405BJ/BT-50/-60
HYB3116405BJ
HYB3117405BJ
HYB5116405
HYB3116405
HYB5117415
HYB5116
405BJ-50/-60
HYB3116
HYB3117405
HYB5116405
HYB5117405
HYB3116405
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)17405F 4,194,304 x 4 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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17405F
26/24-pin
50/60ns
1G5-0187
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)17405 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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26/24-pin
50/60ns
127mm)
025mm)
1G5-0146
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PDF
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|
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5117405
Abstract: smd code Wl3 5117405BJ-60
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405BJ/BT -50/-60/-70 HYB5117405BJ/BT -50/-60/-70 Advanced Information • • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature
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Original
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HYB5116405BJ/BT
HYB5117405BJ/BT
HYB5116405BJ/BT-50)
HYB5116405BJ/BT-60)
HYB53
HYB5116
405BJ/BT-50/-60/-70
GPJ05628
P-TSOPII-26/24
300mil)
5117405
smd code Wl3
5117405BJ-60
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PDF
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HYB3116400
Abstract: HYB3117400 HYB5116400 HYB5117400
Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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Original
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HYB5116400BJ/BT-50/-60
HYB5117400BJ/BT-50/-60
HYB3116400BJ
HYB3117400BJ
HYB5116400
HYB3116400
HYB5117400
HYB31
HYB5116
400BJ-50/-60
HYB3116400
HYB3117400
HYB5116400
HYB5117400
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PDF
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5117400
Abstract: fast page mode dram controller HYB5117400BJ HYB5117400BT
Text: 4M x 4-Bit Dynamic RAM HYB5117400BJ -50/-60/-70 HYB5117400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time
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Original
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HYB5117400BJ
HYB5117400BT
5117400BJ/BT-50/-60/-70
P-SOJ-26/24
GPJ05628
GPX05857
5117400
fast page mode dram controller
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode- EDO HYB5116405B J/BT-50/-60 HYB5117405B J/BT-50/-60 HYB3116405BJ( L)/BT(L)-50/-60 HYB3117405BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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OCR Scan
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HYB5116405B
J/BT-50/-60
HYB5117405B
HYB3116405BJ(
HYB3117405BJ(
P-SOJ-26/24
300mil)
P-TSOPI1-26/24-1
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PDF
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BT 199
Abstract: jyy4
Text: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 3117400BJ/BT -50/-60/-70 Preliminary Information • 4 194 304 words by 4-bit organization • 0 to 70 ‘C operating temperature • Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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OCR Scan
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3117400BJ/BT
23StiDS
0D7b277
535b05
007b27Ã
BT 199
jyy4
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC
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OCR Scan
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5116405BJ
5117405BJ
5116405BJ-50)
5116405BJ-60)
5116405BJ-70)
5117405BJ-50)
5117405BJ-60)
5117405BJ-70)
405BJ-50/-60/-70
85max
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 4 MCM516400 Advance Information Fast Page Mode 16M CMOS Dynamic RAM Family Fast Page Mode, x4 and x1, 2K and 4K Refresh 4096 Cycle Refresh MCM517400 T h e fa m ily o f 1 6 M d y n a m ic R A M s is fa b ric a te d u s in g 0 .6 ^ C M O S h ig h -s p e e d s ilic o n -
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OCR Scan
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MCM516400
MCM517400
CM516100J60
CM516100J70
516400J60
MCM516400J70
517400J60
517400J70
516100T60
516100T70
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 3.3V 4M X 4-Bit EDO-Dynamic RAM 2k & 4k-Refresh HYB 3116405BJ/BT L -50/-60/-70 HYB 3117405BJ/BT(L) -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 'C operating temperature • Performance -50 -60 -70 ÍR A C
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OCR Scan
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3116405BJ/BT
3117405BJ/BT
3117405BJ/BT-50)
3117405BJ/BT-60)
3117405BJ/BT-70)
3116405BJ/BT-50)
3116405BJ/BT-60)
405BJ/BT
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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OCR Scan
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HYB5116400BJ/BT-50/-60
HYB5117400BJ/BT-50/-60
HYB3116400BJ
HYB3117400BJ(
HYB5116400
HYB3116400
HYB5117400
HYB3117400
12/1AM
P-SOJ-26/24
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PDF
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8514/a
Abstract: No abstract text available
Text: WE ST ER N D I G I T A L CORF^ MIE D D cJ71fl22fl O D D ^ a ? IM A G IN G T BUDC T '5 i- 3 WD9500 PWGA Enhanced 8514/A Compatible Chip Set 32S WESTERN DIGITAL /Ù WESTERN D IG IT A L CORP M IE D E3 =1710220 000=1330 0 E3ÜIDC WD9500 Chip Set
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OCR Scan
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J71fl22fl
WD9500
8514/A
WD9500
T-52-33-45
8514/a
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PDF
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